Date: May 25, 1999
Creator: Bhattacharya, R. N.; Batchelor, W.; Contreras, M. A.; Noufi, R. N. (National Renewable Energy Laboratory); Hiltner, J. F. & Sites, J. R. (Department of Physics, Colorado State University)
Description: We have fabricated 15.4%- and 12.4%-efficient CuIn1-XGaXSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposition (ED) and electroless-deposition (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final film composition to CuIn1-XGaXSe2. The ED and EL device parameters are compared with those of a recent world record, an 18.8%-efficient PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics.
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