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0.5 {mu}m E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant

0.5 {mu}m E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant

Date: April 1997
Creator: Baca, A. G.; Sherwin, M. E.; Zolper, J. C.; Shul, R. J.; Briggs, R. D.; Heise, J. A. et al.
Description: A doped-channel heterostructure field effect transistor (H-FET) technology has been developed with self-aligned refractory gate processing and using both enhancement- and depletion-mode transistors. D-HFET devices are obtained with a threshold voltage adjust implant into material designed for E-HFET operation. Both E- and D-HFETs utilize W/WSi bilayer gates, sidewall spacers, and rapid thermal annealing for controlling short channel effects. The 0.5 {mu}m E- HFETs (D-HFETs) have been demonstrated with transconductance of 425 mS/mm (265-310 mS/mm) and f{sub t} of 45-50 GHz. Ring oscillator gate delays of 19 ps with a power of 0.6 mW have been demonstrated using direct coupled FET logic. These results are comparable to previous doped-channel HFET devices and circuits fabricated by selective reactive ion etching rather than ion implantation for threshold voltage adjustment.
Contributing Partner: UNT Libraries Government Documents Department
The 0.22 Percent Across-the-Board Cut in FY2001 Appropriations

The 0.22 Percent Across-the-Board Cut in FY2001 Appropriations

Date: May 31, 2001
Creator: Keith, Robert
Description: Report describing changes that affected the government budget for the 2001 fiscal year under the Consolidated Appropriations Act.
Contributing Partner: UNT Libraries Government Documents Department
The 0.38 Percent Across-the-Board Cut in FY2000 Appropriations

The 0.38 Percent Across-the-Board Cut in FY2000 Appropriations

Date: February 25, 2000
Creator: Keith, Robert
Description: This report outlines cuts made in the federal budget for FY2000. The 0.38% cut was expected to yield savings of $2.4 billion in budget authority and $1.4 billion in outlays for the fiscal year. Departments with cuts in excess of $100 million included the Departments of Defense, Transportation, Health and Human Services, and Education.
Contributing Partner: UNT Libraries Government Documents Department
0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

Date: June 9, 2004
Creator: Dashiell, M. W.; Beausang, J. F.; Nichols, G.; Depoy, D. M.; Danielson, L. R.; Ehsani, H. et al.
Description: Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm{sup 2} multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm{sup 2} respectively at operating at temperatures of T{sub radiator} = 950 C and T{sub diode} = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and {approx}0.85 W/cm{sup 2} could be attained under the above operating temperatures.
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$D^0 \bar{D}^0$ Mixing at BaBar

$D^0 \bar{D}^0$ Mixing at BaBar

Date: October 26, 2011
Creator: Coleman, Jonathon & /SLAC
Description: This article reviews the recent measurement of D{sup 0}-{bar D}{sup 0} mixing with the D{sup 0} {yields} K{pi} decay channel from the BABAR experiment at the PEP-II B-Factory. Averages from the Heavy Flavor Averaging Group between this result and a previous result from BELLE are also presented.
Contributing Partner: UNT Libraries Government Documents Department
D-0 End Calorimeter Warm Tube/TeV Dry Air Purge

D-0 End Calorimeter Warm Tube/TeV Dry Air Purge

Date: August 14, 1991
Creator: Leibfritz, J. R.
Description: This Engineering Note studies the design of the Dry Air Purge that is going to flow through the Warm Tube of the End Calorimeter of the D-O Calorimeter. The Tev tubes through the E.C. can be thought of as a cluster of concentric tubes: The Tev tube, the warm (vacuum vessel) tube, 15 layers of superinsulation, the cold (argon vessel) tube, and the Inner Hadronic center support tube. The Dry Air Purge will involve flowing Dry Air through the annular region between the Warm Tube and the Tev Beam Pipe. This air flow is intended to prevent condensation from forming in this region which could turn to ice under cryogenic temperatures. Any ice formed in this gap, could cause serious problems when these tubes are moved. The Air will flow through a Nylon Tube Fitting -1/4-inch I.D. to 1/8-inch male pipe thread (Cole Palmer YB-06465-15) see Drawing MC-295221 (Appendix A). This fitting will be attached to the Nylon 2-inch Tube-Wiper and Seal Assembly which is clamped to the ends of the Warm Tube (Appendix A). This note includes drawings and calculations that explain the setup of the Dry Air Purge and give the required information on the pressure drops through ...
Contributing Partner: UNT Libraries Government Documents Department
D-0 North End Cap Calorimeter Cold Test Results

D-0 North End Cap Calorimeter Cold Test Results

Date: August 2, 1990
Creator: Michael, J. & /Fermilab
Description: The North endcap calorimeter vessel was recieved on July 1, 1990. A cooldown of the pressure vessel with liquid nitrogen was performed on July 10-11 to check the vessel's integrity. With the pressure vessel cold, the insulating vacuum was monitored for leaks. Through out the testing, the insulating vacuum remained good and the vessel passed the test. The cold test was carried out per the procedures of D-Zero engineering note 3740.220-EN-250. The test was very similar to the cold test performed on the Central Calorimeter in October of 1987. Reference D-Zero engineering notes 3740.210-EN-122, 3740.000-EN107, and 3740.210-EN-110 for information about the CC cold test. The insulating vacuum space was pumped on while equipment was being connected to the pressure vessel. Two hours after starting to pump with the blower the vacuum space pressure was at about 210 microns. Pumping on the vacuum space for the next 15 hours showed no progress and a leak detector was connected to the pumping line. A leak check showed a leak in a thermocouple feedthru on the vacuum space relief plate. After fixing the leak, the pressure dropped to 16 microns in less than one hour. A rate of rise test was performed starting ...
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D-0 South End Cap Calorimeter Cold Test Results

D-0 South End Cap Calorimeter Cold Test Results

Date: November 26, 1990
Creator: Rucinski, R. & /Fermilab
Description: The South endcap calorimeter vessel was moved into Lab A on Sept. 18, 1990. A cooldown of the pressure vessel with liquid nitrogen was performed on Sept. 26 to check the vessel's integrity. With the pressure vessel cold, the insulating vacuum was monitored for leaks. Through out the testing, the insulating vacuum remained good and the vessel passed the test. The cold test was carried out per the procedures of D-Zero engineering note 3740.220-EN-250. The test was very similar to the cold test performed on the Central Calorimeter in October of 1987. The test of the ECS was performed in the same manner using the same equipment as the ECN cold test. Reference D-Zero engineering notes 3740.210-EN-122, 3740.000-EN-I07, and 3740.210-EN-II0 for information about the CC cold test. Reference EN-260 for the results of the ECN cold test. The insulating vacuum space was pumped on while equipment was being connected to the pressure vessel. Two hours after starting to pump with the blower the vacuum space pressure was at about 40 microns. The pumping continued overnight (another 16 hours). In the morning the pressure was 11.5 microns. A rate of rise test was performed. With the pump valved off, the pressure ...
Contributing Partner: UNT Libraries Government Documents Department
1.1 Simulations of a Free-Electron Laser Oscillator at Jefferson Lab Lasing in the Vacuum Ultraviolet

1.1 Simulations of a Free-Electron Laser Oscillator at Jefferson Lab Lasing in the Vacuum Ultraviolet

Date: April 1, 2013
Creator: Shinn, Michelle D. & Benson, Stephen V.
Description: The UVFEL at Jefferson Lab has provided a 10 eV photon beam for users by outcoupling the coherent third harmonic of the UVFEL operated at 372 nm. This can provide up to tens of milliwatts of power in the VUV. Operation of the FEL at the fundamental might enhance this power by up to a factor of 1000. With minor upgrades to the accelerator now underway and a new undulator proposed by Calabazas Creek Research, Inc. we show that we can lase in the fundamental at 124 nm. The predicted output is higher by four orders of magnitude on an average power basis and six orders of magnitude on a peak fluence basis than the Advanced Light Source at Lawrence Berkeley National Laboratory.
Contributing Partner: UNT Libraries Government Documents Department
1/2 CREEP FRACTURE IN CERAMIC POLYCRYSTALS I. CREEP CAVITATION EFFECTS IN POLYCRYSTALLINE ALUMINA

1/2 CREEP FRACTURE IN CERAMIC POLYCRYSTALS I. CREEP CAVITATION EFFECTS IN POLYCRYSTALLINE ALUMINA

Date: September 1980
Creator: Porter, J. R.; Blumenthal, W. & Evans, A. G.
Description: Fine grained polycrystalline alumina has been deformed in creep at high temperatures, to examine the evolution of cavities at grain boundaries. Cavities with equilibrium and crack-like morphologies have been observed, distributed non-uniformly throughout the material. The role of cavities during creep has been described. A transition from equilibrium to crack-like morphology has been observed and correlated with a model based on the influence of the surface to boundary diffusivity ratio and the local tensile stress. The contribution of cavitation to the creep rate and total creep strain has been analyzed and excluded as the principal cause of the observed non-linear creep rate,
Contributing Partner: UNT Libraries Government Documents Department
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