Description: This article discusses ₁¹H+ - and ₂⁴He+ -induced M-shell x-ray production cross sections for selected elements in the rare-earth region. Abstract: The measurements of M-shell x-ray-production cross sections induced by ₁¹H+ and ₂⁴He+ ions are compared to the first-Born-approximation and ECPSSR (energy loss, Coulomb-deflection effects; perturbed-stationary-state approximation, with relativistic corrections) theories. Most of the reported experimental data were measured in the authors' laboratory and the other measurements were taken from the literature. The data from the authors' laboratory were for incident H+ and He+ ions in the energy range from 0.25 to 2.5 MeV. The M-shell x-ray-production cross sections were measured for the following thin targets: 59Pr, 60Nd, 63Eu, 64Gd, 66Dy, 67Ho, 68Er, 70Yb, and 72Hf. The data were for the following elements: 54Xe, 59Pr, 60Nd, 62Sm, 63Eu, 64Gd, 65Tb, 66Dy, 67Ho, 68Er, 70Yb, 72Hf, 73Ta, 74W, 78Pt, 79Au, 80Hg, 82Pb, 83Bi, and 92U. The first-born-approximation calculations of the ionization cross section were made using the plane-wave Born approximation for direct ionization and the Oppenheimer-Brinkman-Kramers approximation of Nikolaev for electron capture. The ECPSSR theory of Brandt and Lapicki [Phys. Rev. A 23, 1717 (1981)] goes beyond the first Born approximation and accounts for the energy loss, Coulomb deflection, and relativistic ...

Description: This article discusses fast diffusion of As in polycrystalline silicon during rapid thermal annealing. Abstract: The diffusion of As in polycrystalline silicon films subjected to rapid thermal annealing has been studied using sheet resistance and Rutherford backscattering. The polycrystalline Si films were deposited on oxidized silicon wafers, implanted with As, and annealed with a Varian IA-200 isothermal annealer. Infrared radiation from a resistively heated sheet of graphite heats the wafer, in a vacuum, to temperatures > 1000 °C for times on the order of a few seconds. The rate of diffusion and rate of loss of As from the polycrystalline Si is much faster than the diffusion rate and loss rate in single crystal Si annealed with identical conditions. Diffusion prior to grain growth agrees with previously reported results for As in polycrystalline Si. However, grain growth appears to enhance As diffusion.

Description: This article discusses excess molar volumes of binary mixtures of cyclohexane and y-butyrolactone with aromatic hydrocarbons. Abstract: Excess molar volumes of cyclohexane + benzene, cyclohexane + toluene, cyclohexane + p-xylene, y-butyrolactone + benzene, y-butyrolactone + toluene, and y-butyrolactone + m-xylene have been measured at 298.15 K. For the first three systems, Vᴱ is positive throughout the entire concentration range. Vᴱ is negative for binary mixtures containing y-butyrolactone, which indicates significant interaction between y-butyrolactone and the aromatic hydrocarbon.

Description: This article discusses experimental artifacts and determination of accurate Py values. Abstract: Recently the Py solvent scale has been introduced and a large body of data has been generated using fluorescence measurements. Numerous problems exist in the correct determination of these values, including instrumental and chemical artifacts. Among the instrumental problems associated with correct Py assignments are slit width effects, inner filtering and efficiencies associated with double-pass vs. single-pass cell compartment designs. These instrumental problems, together with chemical artifacts related to adequate blank correction and temperature control, were investigated in the work reported in this paper.

Description: This article discusses multiple outer-shell ionization effect in inner-shell x-ray production by light ions. L-shell x-ray production cross sections by 0.25-2.5-MeV ₂⁴He+ ions in 28Ni, 29Cu, 32Ge, 33As, 37Rb, 38Sr, 39Y, 40Zr, and 46Pd are reported. The data are compared to the first-Born approximation and the ECPSSR theory that accounts for the projectile energy loss (E) and Coulomb deflection (C) as well as the perturbed-stationary-state (PSS) and relativistic (R) effects in the treatment of the target L-shell electron. Surprisingly, the first Born approximation appears to converge to the data while the ECPSSR predictions underestimate them in the low-velocity limit. This is explained as the result of improper use of single-hole fluorescence yields. A heuristic formula is proposed to account for multiple ionizations in terms of a classical probability for these phenomena and, after it is applied, the ECPSSR theory of L-shell ionization is found to be in good agreement with the data.