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Strain fields around high-energy ion tracks in α-quartz
This article discusses strain fields around high-energy ion tracks in α-quartz.
Formation and characterization of ion beam assisted nanosystems in silicon
Article on the formation and characterization of ion beam assisted nanosystems in silicon.
Experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉
This article discusses experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉.
Z1 oscillations of the mean charge for isotachic ions in carbon foils
Article discussing Z1 oscillations of the mean charge for isotachic ions in carbon foils.
Charge-state dependence of M-shell x-ray production in 67Ho by 2-12-MeV carbon ions
Article discussing research on the charge-state dependence of M-shell x-ray production in 67Ho by 2-12-MeV carbon ions.
Charge-state dependence of K-shell x-ray production in aluminum by 2-12-MeV carbon ions
Article discussing research on the charge-state dependence of K-shell x-ray production in aluminum by 2-12-MeV carbon ions.
Ion Beam Analyses of Carbon Nanotubes
This article discusses ion beam analyses of carbon nanotubes.
Simultaneous measurement of the average ion-induced electron emission yield and the mean charge for isotachic ions in carbon foils
Article discussing the simultaneous measurement of the average ion-induced electron emission yield and the mean charge for isotachic ions in carbon foils.
Fabrication of silicon-based optical components for an ultraclean accelerator mass spectronomy negative ion source
Article discussing the fabrication of silicon-based optical components for an ultraclean accelerator mass spectonomy negative ion source.
High Sensitivity Measurement of Implanted as in the Presence of Ge in Ge(x)Si(1-x)/Si Layered Alloys Using Trace Element Accelerator Mass Spectrometry
This article discusses high sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry.
Low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry
This article discusses low-level copper concentration measurements in silicon wafers using trace-element accelerator mass spectrometry.
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