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  Partner: UNT College of Arts and Sciences
 Decade: 1990-1999
 Year: 1993
 Language: English
An Abstract Index Theorem on Non-Compact Riemannian Manifolds

An Abstract Index Theorem on Non-Compact Riemannian Manifolds

Date: 1993
Creator: Anghel, Nicolae
Description: This article discusses an abstract index theorem on non-compact Riemannian manifolds. Abstract: We prove an abstract index theorem for essentially self-adjoint Fredholm supersymmetric first-order elliptic differential operators on Hermitian vector bundles over complete oriented Riemannian manifolds. According to our main result the supersymmetric L2-index of such an operator can be expressed as the sum of a "local contribution" (the familiar Atiyah-Singer index form, suitably restricted to and integrated over a finite region) and a "boundary contribution" (which depends only on the restriction of the operator at large distances). This is done by splicing together local parametrices and Green's operators defined "at infinity". The result yields (in fact is equivalent to) a generalisation of the relative index theorem of Gromov and Lawson.
Contributing Partner: UNT College of Arts and Sciences
Scanning tunneling microscopy of the electronic structure of chemical vapor deposited diamond films

Scanning tunneling microscopy of the electronic structure of chemical vapor deposited diamond films

Date: April 19, 1993
Creator: Pérez, José M.; Lin, C.; Rivera, W.; Hyer, R.C.; Green, M.; Sharma, S.C. et al
Description: This article discusses scanning tunneling microscopy of the electronic structure of chemical vapor deposited diamond films. Scanning tunneling microscopy has been used to characterize the electronic structure and surface morphology of diamond films grown using the hot filament and microwave plasma chemical vapor deposition techniques. The authors observe a significant difference between the current-voltage (I-V) curves for the two types of films. The I-V curves for the hot-filament grown films are characterized by a well-defined zero-current region from which a surface band gap of 4.1 eV is measured. The I-V curves for the microwave plasma grown films exhibit a rectifying behavior which can be modeled by surface band bending. The authors compare the surface density of states obtained from the I-V curves with those obtained from x-ray photoelectron and appearance potential spectroscopies.
Contributing Partner: UNT College of Arts and Sciences
Small Molecule Elimination from Group IVB (Ti, Zr, Hf) Amido Complexes

Small Molecule Elimination from Group IVB (Ti, Zr, Hf) Amido Complexes

Date: May 1993
Creator: Cundari, Thomas R., 1964- & Gordon, Mark S.
Description: This article discusses small molecule elimination from group IVB (Ti, Zr, Hf) amido complexes. An ab initio quantum chemical analysis of HX (X = H, CH₃, Cl, NH₂, SiH₃) elimination by group IVB (Ti, Zr, Hf) amidos (H₂(X)M - NH₂ → H₂M = NH + HX), of interest in the context of CVD precursor design, is reported. Several deductions may be drawn from the calculations. First, in the transition state (TS) for HX elimination, electropositive and electroneutral X give rise to metal-transannular hydrogen (Ht) distances only slightly longer than normal metal-terminal hydride bonds lengths, while electronegative X groups yield substantially longer MHt distances. Second, the HX elimination barrier (∆Hǂelim) is lower when HX is polarized Hδ- • Hδ+ (X = SiH₃) or nonpolar (X = H). Third, a plot of calculated ∆Hǂelim versus MHt distances in the TS. Fourth, analysis of the electronic structure along the intrinsic reaction coordinate (IRC) supports the importance of N-H•••M agostic interactions preceding N-H scission. Fifth, the IRC shows the MHt distance decreasing as Ht is transferred from N to X, reaching a minimum when the transfer is roughly half complete, and then increasing once more is HX is eliminated. These results point to the ...
Contributing Partner: UNT College of Arts and Sciences