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 Degree Discipline: Materials Science and Engineering
Effect of Retting on Surface Chemistry and Mechanical Performance Interactions in Natural Fibers for High Performance Polymer Composites

Effect of Retting on Surface Chemistry and Mechanical Performance Interactions in Natural Fibers for High Performance Polymer Composites

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Date: May 2013
Creator: Ramesh, Dinesh
Description: Sustainability through replacement of non-renewable fibers with renewable fibers is an ecological need. Impact of transportation costs from South-east Asia on the life cycle analysis of the composite is detrimental. Kenaf is an easily grown crop in America. Farm based processing involves placing the harvested crop in rivers and ponds, where retting of the fibers from the plant (separation into fibers) can take 2 weeks or more. The objective of this thesis is to analyze industrially viable processes for generating fibers and examine their synergistic impact on mechanical performance, surface topography and chemistry for functional composites. Comparison has been made with commercial and conventional retting process, including alkali retting, enzymatic retting, retting in river and pond water (retting occurs by natural microbial population) with controlled microbial retting. The resulting kenaf fibers were characterized by dynamic mechanical analysis (DMA), Raman spectroscopy (FT-Raman), Fourier transform infrared spectroscopy (FT-IR), polarized optical microscopy (POM), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM) optical fluorescence microscopy, atomic force microscopy (AFM) and carbohydrate analysis. DMA results showed that pectinase and microbe treated fibers have superior viscoelastic properties compared to alkali retting. XPS, Raman, FT-IR and biochemical analysis indicated that the controlled microbial and pectinase retting was ...
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Effect of Silyation on Organosilcate Glass Films

Effect of Silyation on Organosilcate Glass Films

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Date: August 2004
Creator: Kadam, Poonam
Description: Photoresist stripping with oxygen plasma ashing destroys the functional groups in organosilicate glass films and induce moisture uptake, causing low-k dielectric degradation. In this study, hexamethyldisilazane (HMDS), triethylchlorosilane and tripropylchlorosilane are used to repair the damage to organosilicate glass by the O2 plasma ashing process. The optimization of the surface functionalization of the organosilicate glass by the silanes and the thermal stability of the functionalized surfaces are investigated. These experimental results show that HMDS is a promising technique to repair the damage to OSG during the photoresist removal processing and that the heat treatment of the functionalized surfaces causes degradation of the silanes deteriorating the hydrophobicity of the films.
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Effects of Plasma, Temperature and Chemical Reactions on Porous Low Dielectric Films for Semiconductor Devices

Effects of Plasma, Temperature and Chemical Reactions on Porous Low Dielectric Films for Semiconductor Devices

Date: December 2010
Creator: Osei-Yiadom, Eric
Description: Low-dielectric (k) films are one of the performance drivers for continued scaling of integrated circuit devices. These films are needed in microelectronic device interconnects to lower power consumption and minimize cross talk between metal lines that "interconnect" transistors. Low-k materials currently in production for the 45 and 65 nm node are most often organosilicate glasses (OSG) with dielectric constants near 2.8 and nominal porosities of 8-10%. The next generation of low-k materials will require k values 2.6 and below for the 45 nm device generation and beyond. The continuous decrease in device dimensions in ultra large scale integrated (ULSI) circuits have brought about the replacement of the silicon dioxide interconnect dielectric (ILD), which has a dielectric constant (k) of approximately 4.1, with low dielectric constant materials. Lowering the dielectric constant reduces the propagation delays, RC constant (R = the resistance of the metal lines; C = the line capacitance), and metal cross-talk between wires. In order to reduce the RC constants, a number of low-k materials have been studied for use as intermetal dielectrics. The k values of these dielectric materials can be lowered by replacing oxide films with carbon-based polymer films, incorporating hydrocarbon functional groups into oxide films (SiOCH ...
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Electrical and Structure Properties of High-κ Barium Tantalite and Aluminum Oxide Interface with Zinc Oxide for Applications in Transparent Thin Film Transistors

Electrical and Structure Properties of High-κ Barium Tantalite and Aluminum Oxide Interface with Zinc Oxide for Applications in Transparent Thin Film Transistors

Date: August 2011
Creator: Kuo, Fang-Ling
Description: ZnO has generated interest for flexible electronics/optoelectronic applications including transparent thin film transistors (TFTs). For this application, low temperature processes that simultaneously yield good electrical conductivity and optical transparency and that are compatible with flexible substrates such as plastic, are of paramount significance. Further, gate oxides are a critical component of TFTs, and must exhibit low leakage currents and self-healing breakdown in order to ensure optimal TFTs switching performance and reliability. Thus, the objective of this work was twofold: (1) develop an understanding of the processing-structure-property relationships of ZnO and high-κ BaTa2O6 and Al2O3 (2) understand the electronic defect structure of BaTa2O6 /ZnO and Al2O3/ZnO interfaces and develop insight to how such interfaces may impact the switching characteristics (speed and switching power) of TFTs featuring these materials. Of the ZnO films grown by atomic layer deposition (ALD), pulsed laser deposition (PLD) and magnetron sputtering at 100-200 °C, the latter method exhibited the best combination of n-type electrical conductivity and optical transparency. These determinations were made using a combination of photoluminescence, photoluminescence excitation, absorption edge and Hall measurements. Metal-insulator-semiconductor devices were then fabricated with sputtered ZnO and high-κ BaTa2O6 and Al2O3 and the interfaces of high-κ BaTa2O6 and Al2O3 with ZnO ...
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Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films.

Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films.

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Date: August 2006
Creator: Ukirde, Vaishali
Description: Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using hydrogen to improve electronic performance of electronic structures. Trap transformations under annealing treatments in hydrogen ambient normally involve passivation of traps at thermal SiO2/Si interfaces by hydrogen. High-κ dielectric films are believed to exhibit significantly higher charge trapping affinity than SiO2. In this thesis, study of hydrogen trapping in alternate gate dielectric candidates such as HfO2 during annealing in hydrogen ambient is presented. Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA) were used to characterize these thin dielectric materials. It was demonstrated that hydrogen trapping in bulk HfO2 is significantly reduced for pre-oxidized HfO2 prior to forming gas anneals. This strong dependence on oxygen pre-processing is believed to be due to oxygen vacancies/deficiencies and hydrogen-carbon impurity complexes that originate from organic precursors used in ...
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Fatigue Behavior of A356 Aluminum Alloy

Fatigue Behavior of A356 Aluminum Alloy

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Date: 2016-5
Creator: Nelaturu, Phalgun
Description: Metal fatigue is a recurring problem for metallurgists and materials engineers, especially in structural applications. It has been responsible for many disastrous accidents and tragedies in history. Understanding the micro-mechanisms during cyclic deformation and combating fatigue failure has remained a grand challenge. Environmental effects, like temperature or a corrosive medium, further worsen and complicate the problem. Ultimate design against fatigue must come from a materials perspective with a fundamental understanding of the interaction of microstructural features with dislocations, under the influence of stress, temperature, and other factors. This research endeavors to contribute to the current understanding of the fatigue failure mechanisms. Cast aluminum alloys are susceptible to fatigue failure due to the presence of defects in the microstructure like casting porosities, non-metallic inclusions, non-uniform distribution of secondary phases, etc. Friction stir processing (FSP), an emerging solid state processing technique, is an effective tool to refine and homogenize the cast microstructure of an alloy. In this work, the effect of FSP on the microstructure of an A356 cast aluminum alloy, and the resulting effect on its tensile and fatigue behavior have been studied. The main focus is on crack initiation and propagation mechanisms, and how stage I and stage II cracks ...
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First Principles Calculations of the Site Substitution Behavior in Gamma Prime Phase in Nickel Based Superalloys

First Principles Calculations of the Site Substitution Behavior in Gamma Prime Phase in Nickel Based Superalloys

Date: August 2012
Creator: Chaudhari, Mrunalkumar
Description: Nickel based superalloys have superior high temperature mechanical strength, corrosion and creep resistance in harsh environments and found applications in the hot sections as turbine blades and turbine discs in jet engines and gas generator turbines in the aerospace and energy industries. The efficiency of these turbine engines depends on the turbine inlet temperature, which is determined by the high temperature strength and behavior of these superalloys. The microstructure of nickel based superalloys usually contains coherently precipitated gamma prime (?) Ni3Al phase within the random solid solution of the gamma () matrix, with the ? phase being the strengthening phase of the superalloys. How the alloying elements partition into the and ? phases and especially in the site occupancy behaviors in the strengthening ? phases play a critical role in their high temperature mechanical behaviors. The goal of this dissertation is to study the site substitution behavior of the major alloying elements including Cr, Co and Ti through first principles based calculations. Site substitution energies have been calculated using the anti-site formation, the standard defect formation formalism, and the vacancy formation based formalism. Elements such as Cr and Ti were found to show strong preference for Al sublattice, whereas Co ...
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First Principles Study of Metastable Beta Titanium Alloys

First Principles Study of Metastable Beta Titanium Alloys

Date: August 2015
Creator: Gupta, Niraj
Description: The high temperature BCC phase (b) of titanium undergoes a martensitic transformation to HCP phase (a) upon cooling, but can be stabilized at room temperature by alloying with BCC transition metals such as Mo. There exists a metastable composition range within which the alloyed b phase separates into a + b upon equilibrium cooling but not when rapidly quenched. Compositional partitioning of the stabilizing element in as-quenched b microstructure creates nanoscale precipitates of a new simple hexagonal w phase, which considerably reduces ductility. These phase transformation reactions have been extensively studied experimentally, yet several significant questions remain: (i) The mechanism by which the alloying element stabilizes the b phase, thwarts its transformation to w, and how these processes vary as a function of the concentration of the stabilizing element is unclear. (ii) What is the atomistic mechanism responsible for the non-Arrhenius, anomalous diffusion widely observed in experiments, and how does it extend to low temperatures? How does the concentration of the stabilizing elements alter this behavior? There are many other w forming alloys that such exhibit anomalous diffusion behavior. (iii) A lack of clarity remains on whether w can transform to a -phase in the crystal bulk or if it ...
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Formation and Quantification of Corrosion Deposits in the Power Industry

Formation and Quantification of Corrosion Deposits in the Power Industry

Date: May 2007
Creator: Namduri, Haritha
Description: The presence of deposits on the secondary side of pressurized water reactor (PWR) steam generator systems is one of the main contributors to the high maintenance costs of these generators. Formation and transport of corrosion products formed due to the presence of impurities, metals and metallic oxides in the secondary side of the steam generator units result in formation of deposits. This research deals with understanding the deposit formation and characterization of deposits by studying the samples collected from different units in secondary side system at Comanche Peak Steam Electric Station (CPSES). Fourier transform infrared spectrophotometry (FTIR), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) have been used for studying the phases, morphologies and compositions of the iron oxides formed at Unit 1 and Unit 2 of secondary side of steamgenerator systems. Hematite and magnetite were found to be the dominant phases of iron oxides present in the units. Fe, Cr, O, Ni, Si, Cl and Cu were found in samples collected from both the units. A qualitative method was developed to differentiate iron oxides using laser induced breakdown spectroscopy (LIBS) based on temporal response of iron oxides to a high power laser beam. A quantitative FTIR technique was ...
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Functionalization and characterization of porous low-κ dielectrics.

Functionalization and characterization of porous low-κ dielectrics.

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Date: May 2005
Creator: Orozco-Teran, Rosa Amelia
Description: The incorporation of fluorine into SiO2 has been shown to reduce the dielectric constant of the existing materials by reducing the electrical polarizability. However, the incorporation of fluorine has also been shown to decrease film stability. Therefore, new efforts have been made to find different ways to further decrease the relative dielectric constant value of the existing low-k materials. One way to reduce the dielectric constant is by decreasing its density. This reduces the amount of polarizable materials. A good approach is increasing porosity of the film. Recently, fluorinated silica xerogel films have been identified as potential candidates for applications such as interlayer dielectric materials in CMOS technology. In addition to their low dielectric constants, these films present properties such as low refractive indices, low thermal conductivities, and high surface areas. Another approach to lower k is incorporating lighter atoms such as hydrogen or carbon. Silsesquioxane based materials are among them. However, additional integration issues such as damage to these materials caused by plasma etch, plasma ash, and wet etch processes are yet to be overcome. This dissertation reports the effects of triethoxyfluorosilane-based (TEFS) xerogel films when reacted with silylation agents. TEFS films were employed because they form robust silica ...
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