Interfacial Studies of Bimetallic Corrosion in Copper/Ruthenium Systems and Silicon Surface Modification with Organic and Organometallic Chemistry
Description:
To form Cu interconnects, dual-damascene techniques like chemical mechanical planarization (CMP) and post-CMP became inevitable for removing the "overburden" Cu and for planarizing the wafer surface. During the CMP processing, Cu interconnects and barrier metal layers experience different electrochemical interactions depending on the slurry composition, pH, and ohmic contact with adjacent metal layers that would set corrosion process. Ruthenium as a replacement of existing diffusion barrier lay…
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Access:
Restricted to the UNT Community Members at a
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Date:
August 2006
Creator:
Nalla, Praveen Reddy