You limited your search to:

  Partner: UNT Libraries
 Department: Department of Materials Science
 Collection: UNT Theses and Dissertations
Temperature dependent rheology of surfactant-hydroxypropyl cellulose solutions.

Temperature dependent rheology of surfactant-hydroxypropyl cellulose solutions.

Date: December 2002
Creator: Snively, C. Todd
Description: The rheology of 1-8% hydroxypropyl cellulose (HPC) solutions has been studied in the temperature range of 20-45 degrees Celsius. The results showed that the relative viscosity at each HPC concentration decreases with increasing temperature. The relative viscosity decreases drastically at about 43 degrees Celsius due to a phase transition. The influence of anionic surfactant, sodium dodecylsulfate (SDS), induced gelation of a 2% HPC solution. The HPC solutions gelled at surfactant SDS concentrations ranging from 0.4 to 1.0 critical micelle concentration (CMC). The gelation of the HPC/SDS hydrogel is explained in the surfactant SDD - bridged HPC linear polymer chains. The complex viscosity - concentration profile was determined below the CMC of the SDS - water pair. The peak itself was a function of frequency indicating the presence of two relaxation times within the gelled network.
Contributing Partner: UNT Libraries
The Electron Emission Characteristics of Aluminum, Molybdenum and Carbon Nanotubes Studied by Field Emission and Photoemission.

The Electron Emission Characteristics of Aluminum, Molybdenum and Carbon Nanotubes Studied by Field Emission and Photoemission.

Date: December 2002
Creator: Sosa, Edward Delarosa
Description: The electron emission characteristics of aluminum, molybdenum and carbon nanotubes were studied. The experiments were setup to study the emission behavior as a function of temperature and exposure to oxygen. Changes in the surface work function as a result of thermal annealing were monitored with low energy ultra-violet photoelectron spectroscopy for flat samples while field emission energy distributions were used on tip samples. The change in the field emission from fabricated single tips exposed to oxygen while in operation was measured using simultaneous Fowler-Nordheim plots and electron energy distributions. From the results a mechanism for the degradation in the emission was concluded. Thermal experiments on molybdenum and aluminum showed that these two materials can be reduced at elevated temperatures, while carbon nanotubes on the other hand show effects of oxidation. To purely reduce molybdenum a temperature in excess of 750 ºC is required. This temperature exceeds that allowed by current display device technology. Aluminum on the other hand shows reduction at a much lower temperature of at least 125 ºC; however, its extreme reactivity towards oxygen containing species produces re-oxidation. It is believed that this reduction is due to the outward diffusion of aluminum atoms through the oxide. Carbon nanotubes ...
Contributing Partner: UNT Libraries
Fabrication of MOS capacitor and transitor structure using contact photolithography.

Fabrication of MOS capacitor and transitor structure using contact photolithography.

Access: Use of this item is restricted to the UNT Community.
Date: August 2002
Creator: Su, Danni
Description: This problem in lieu of thesis report describes a practical photolithographic method to produce micro patterns on metal-oxide-semiconductor or metal-oxide-semiconductor-metal layers for electrical measurements. The desired patterns are then transferred from the photo mask to the photoresist-coated metal film by exposure, followed by wet etching. In the procedure described in this report, it was observed that microstructures as small as 27 mm with an edge roughness of ~ 2 mm can be reproducibly generated with this process. MOS capacitors and transistors structures can be fabricated by using this technique. The method described in this report requires access to only simple facilities so that it is relatively inexpensive, and the overall time required for the whole process is short.
Contributing Partner: UNT Libraries
Application of thermomechanical characterization techniques to bismuth telluride based thermoelectric materials

Application of thermomechanical characterization techniques to bismuth telluride based thermoelectric materials

Access: Use of this item is restricted to the UNT Community.
Date: August 2002
Creator: White, John B.
Description: The thermoelectric properties of bismuth telluride based thermoelectric (TE) materials are well-characterized, but comparatively little has been published on the thermomechanical properties. In this paper, dynamic mechanical analysis (DMA) and differential scanning calorimetry data for bismuth telluride based TE materials is presented. The TE materials' tan delta values, indicative of viscoelastic energy dissipation modes, approached that of glassy or crystalline polymers, were greater than ten times the tan delta of structural metals, and reflected the anisotropic nature of TE materials. DMA thermal scans showed changes in mechanical properties versus temperature with clear hysteresis effects. These results showed that the application of DMA techniques are useful for evaluation of thermophysical and thermomechanical properties of these TE materials.
Contributing Partner: UNT Libraries
Techniques Utilized in the Characterization of Existing Materials for Improved Material Development

Techniques Utilized in the Characterization of Existing Materials for Improved Material Development

Date: December 2001
Creator: Withaeger, Gary
Description: It has become increasingly important to remain on the cutting edge of technology for a company to remain competitive and survive in today's high-tech industries. To do this, a company needs various resources dedicated to this cause. One of these resources is the use of existing materials, as starting points, for which improved materials can be based. For this, a company must rely on the characterization of existing materials to bring that base technology into their company. Through this evaluation, the base materials properties can be obtained and a material with improved properties can be developed. There are many techniques that can be used in characterizing an existing material, but not every technique is required to obtain the desired goal. The techniques utilized depend upon the depth of identification required. This report summarizes several techniques utilized in the characterization of existing materials and provides some examples of evaluated products.
Contributing Partner: UNT Libraries
Study of Gate Electrode Materials on High K Dielectrics

Study of Gate Electrode Materials on High K Dielectrics

Date: August 2003
Creator: Yao, Chun
Description: This problem in lieu of thesis report presents a study on gate electrode materials on high K dielectrics, including poly-SiGe and Ru. The stability of poly-SiGe in direct contact with Hf silicon-oxynitride (HfSiON) is studied by rapid thermal annealing (RTA), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM). By performing a series of RTA treatments we found that as RTA thermal budgets reach 1050 C for 30s, the poly-SiGe layer begins to intermix with the HfSiON film, as observed by TEM. The maximum annealing condition for the Hf0.14Si0.23O0.46N0.17 film to remain stable in contact with poly-SiGe is 1050 C for 20s in high purity N2(99.9%) ambient. We also found that after 1000 C annealing for 60s in a nitrogen ambient, the poly-SiGe crystal phase structure was changed from a columnar structure to a large grain structure. For a metal gate, Ru was studied to determine N2annealing effects on sheet resistance of Ru sample electrodes and electrical characterization of Ru/HfSiOx/Si stack. Results show that a pure Ru metal gate is not a good choice for high k materials since it is hard to etch off, and different annealing conditions can cause large changes in ...
Contributing Partner: UNT Libraries
Influence of design and coatings on the mechanical reliability of semiconductor wafers.

Influence of design and coatings on the mechanical reliability of semiconductor wafers.

Date: August 2002
Creator: Yoder, Karl J.
Description: We investigate some of the mechanical design factors of wafers and the effect on strength. Thin, solid, pre-stressed films are proposed as a means to improve the bulk mechanical properties of a wafer. Three-point bending was used to evaluate the laser scribe density and chemical processing effect on wafer strength. Drop and strike tests were employed to investigate the edge bevel profile effect on the mechanical properties of the wafer. To characterize the effect of thin films on strength, one-micron ceramic films were deposited on wafers using PECVD. Coated samples were prepared by cleaving and were tested using four-point bending. Film adhesion was characterized by notched four-point bending. RBS and FTIR were used to obtain film chemistry, and nanoindentation was used to investigate thin film mechanical properties. A stress measurement gauge characterized residual film stress. Mechanical properties of the wafers correlated to the residual stress in the film.
Contributing Partner: UNT Libraries
FIRST PREV 1 2 3 NEXT LAST