Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.
Description:
Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric…
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Date:
August 2002
Creator:
Quevedo-Lopez, Manuel Angel