Modeling and reduction of gate leakage during behavioral synthesis of nanoscale CMOS circuits.
Description:
The major sources of power dissipation in a nanometer CMOS circuit are capacitive switching, short-circuit current, static leakage and gate oxide tunneling. However, with the aggressive scaling of technology the gate oxide direct tunneling current (gate leakage) is emerging as a prominent component of power dissipation. For sub-65 nm CMOS technology where the gate oxide (SiO2) thickness is very low, the direct tunneling current is the major form of tunneling. There are two contribution parts in…
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Date:
May 2006
Creator:
Velagapudi, Ramakrishna