MBE Growth and Instrumentation
Description:
This thesis mainly aims at application of principles of engineering technology in the field of molecular beam epitaxy (MBE). MBE is a versatile technique for growing epitaxial thin films of semiconductors and metals by impinging molecular beams of atoms onto a heated substrate under ultra-high vacuum (UHV) conditions. Here, a LabVIEW® (laboratory virtual instrument engineering workbench) software (National Instruments Corp., http://www.ni.com/legal/termsofuse/unitedstates/usH) program is dev…
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Date:
May 2006
Creator:
Tarigopula, Sriteja