Investigation of Copper Out-Plating Mechanism on Silicon Wafer Surface
Description:
As the miniaturization keeps decreasing in semiconductor device fabrication, metal contamination on silicon surfaces becomes critical. An investigation of the fundamental mechanism of metal contamination process on silicon surface is therefore important. Kinetics and thermodynamics of the copper out-plating process on silicon surfaces in diluted HF solutions are both evaluated by several analytical methods.
Date:
August 1995
Creator:
Chien, Hsu-Yueh