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  Partner: UNT Libraries
 Department: Department of Physics
 Decade: 1990-1999
 Collection: UNT Theses and Dissertations
Accelerator Mass Spectrometry Studies of Highly Charged Molecular Ions

Accelerator Mass Spectrometry Studies of Highly Charged Molecular Ions

Date: December 1994
Creator: Kim, Yong-Dal
Description: The existence of singly, doubly, and triply charged diatomic molecular ions was observed by using an Accelerator Mass Spectrometry (AMS) technique. The mean lifetimes of 3 MeV boron diatomic molecular ions were measured. No isotopic effects on the mean lifetimes of boron diatomic molecules were observed for charge state 3+. Also, the mean lifetime of SiF^3+ was measured.
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Angular Dependence of the Stopping Processes and the Yields of Ion-induced Electron Emission from Channeled MEV Protons in <100> Silicon Foils

Angular Dependence of the Stopping Processes and the Yields of Ion-induced Electron Emission from Channeled MEV Protons in <100> Silicon Foils

Date: December 1993
Creator: Zhao, Zhiyong
Description: The present work reports the experimental evidence of anomalous energy loss, energy straggling, and the corresponding ion-induced electron emission yields of channeled protons in silicon.
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Characterization and Field Emission Properties of Mo2C and Diamond Thin Films Deposited on Mo Foils and Tips by Electrophoresis

Characterization and Field Emission Properties of Mo2C and Diamond Thin Films Deposited on Mo Foils and Tips by Electrophoresis

Date: August 1999
Creator: Rouse, Ambrosio A., 1960-
Description: In this dissertation M02C and diamond films deposited by electrophoresis on flat Mo foils and tips have been studied to determine their suitability as field emission tips.
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Charge State Dependence of M-Shell X-Ray Production in 67Ho by 2-12 MeV Carbon Ions

Charge State Dependence of M-Shell X-Ray Production in 67Ho by 2-12 MeV Carbon Ions

Date: August 1994
Creator: Sun, Hsueh-Li
Description: The charge state dependence of M-shell x-ray production cross sections of 67HO bombarded by 2-12 MeV carbon ions with and without K-vacancies are reported. The experiment was performed using an NEC 9SDH-2 tandem accelerator at the Ion Beam Modification and Analysis Laboratory of the University of North Texas. The high charge state carbon ions were produced by a post-accelerator stripping gas cell. Ultra-clean holmium targets were used in ion-atom collision to generate M-shell x rays at energies from 1.05 to 1.58 keV. The x-ray measurements were made with a windowless Si(Li) x-ray detector that was calibrated using radiative sources, particle induced x-ray emission (PIXE), and the atomic field bremsstrahlung (AFB) techniques.
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Charge State Distributions in Molecular Dissociation

Charge State Distributions in Molecular Dissociation

Date: December 1998
Creator: Renfrow, Steven N. (Steven Neal)
Description: The present work provides charge state fractions that may be used to generate TEAMS relative sensitivity factors for impurities in semiconductor materials.
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Dielectric Relaxation of Aqueous Solutions at Microwave Frequencies for 3[less than or equal to]f[less than or equal to]35 GHz. Using a Loaded Microwave Cavity Operating in the TM010 Mode

Dielectric Relaxation of Aqueous Solutions at Microwave Frequencies for 3[less than or equal to]f[less than or equal to]35 GHz. Using a Loaded Microwave Cavity Operating in the TM010 Mode

Date: August 1994
Creator: Wang, Henry F. S. (Henry Fu-Sen)
Description: The frequency dependence and temperature dependence of the complex dielectric constant of water is of great interest. The temperature dependence of the physical properties of water given in the literature, specific heat, thermal conductivity, electric conductivity, pH, etc. are compared to the a. c. (microwave) and d. c. conductivity of water with a variety of concentration of different substances such as HC1, NaCl, HaS04, etc. When each of these properties is plotted versus inverse absolute temperature, it can be seen that each sample shows "transition temperatures". In this work, Slater's perturbation equations for a resonant microwave cavity were used to analyze the experimental results for the microwave data.
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Diffusion Kinetics and Microstructure of Eutectic and Composite Solder/Copper Joints

Diffusion Kinetics and Microstructure of Eutectic and Composite Solder/Copper Joints

Date: May 1994
Creator: Wu, Yujing
Description: Sn/Pb solders are widely used by the electronics industry to provide both mechanical and electrical interconnections between electronic components and printed circuit boards. Solders with enhanced mechanical properties are required for high reliability for Surface Mount Technology (SMT) applications. One approach to improve the mechanical properties of solder is to add metallic or intermetallic particles to eutectic 63Sn/37Pb solder to form composite solders. Cu6Sn5 and Cu3Sn form and grow at the solder/copper substrate interface. The formation and growth of these intermetallics have been proposed as controlling mechanisms for solderability and reliability of solder/copper joints. The goal of this study was to investigate the diffusion kinetics and microstructures of six types of composite solder/copper joints.
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Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Date: May 1999
Creator: Venezia, Vincent C.
Description: High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in MeV Si-implanted silicon both during implantation and post-implant annealing. Although previous investigations have identified a vacancy excess in MeV-implanted silicon, the investigations presented in this dissertation are unique in that they are designed to correlate the free-vacancy supersaturation with the vacancies in clusters. Free-vacancy (and interstitial) supersaturations were measured with Sb (B) dopant diffusion markers. Vacancies in clusters were profiled by Au labeling; a new technique based on the observation that Au atoms trap in the presence of open-volume defects. The experiments described in this dissertation are also unique in that they were designed to isolate the deep interstitial excess from interacting with the much shallower vacancy excess during post-implant thermal processing.
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Experimental Synchronization of Chaotic Attractors Using Control

Experimental Synchronization of Chaotic Attractors Using Control

Date: December 1994
Creator: Newell, Timothy C. (Timothy Charles)
Description: The focus of this thesis is to theoretically and experimentally investigate two new schemes of synchronizing chaotic attractors using chaotically operating diode resonators. The first method, called synchronization using control, is shown for the first time to experimentally synchronize dynamical systems. This method is an economical scheme which can be viably applied to low dimensional dynamical systems. The other, unidirectional coupling, is a straightforward means of synchronization which can be implemented in fast dynamical systems where timing is critical. Techniques developed in this work are of fundamental importance for future problems regarding high dimensional chaotic dynamical systems or arrays of mutually linked chaotically operating elements.
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Expulsion of Carriers from the Double-Barrier Quantum Well and Investigation of Its Spectral and Transport Consequences

Expulsion of Carriers from the Double-Barrier Quantum Well and Investigation of Its Spectral and Transport Consequences

Date: March 1992
Creator: Chyla, Wojciech Tadeusz
Description: In this work I investigate the expulsion of carriers from nanostructures using the double-barrier quantum well (DBQW) as an example and discuss manifestations of this effect in the spectrum of the DBQW in absence of bias, and in the tunneling current in presence of bias. Assuming equality of the Fermi energy in all regions of the considered system, I compute the relative density of carriers localized in the DBQW and conclude that a fraction of carriers is expelled from this nanostructure.
Contributing Partner: UNT Libraries
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