### Exploration of hierarchical leadership and connectivity in neural networks in vitro.

**Date:**December 2008

**Creator:**Ham, Michael I.

**Description:**Living neural networks are capable of processing information much faster than a modern computer, despite running at significantly lower clock speeds. Therefore, understanding the mechanisms neural networks utilize is an issue of substantial importance. Neuronal interaction dynamics were studied using histiotypic networks growing on microelectrode arrays in vitro. Hierarchical relationships were explored using bursting (when many neurons fire in a short time frame) dynamics, pairwise neuronal activation, and information theoretic measures. Together, these methods reveal that global network activity results from ignition by a small group of burst leader neurons, which form a primary circuit that is responsible for initiating most network-wide burst events. Phase delays between leaders and followers reveal information about the nature of the connection between the two. Physical distance from a burst leader appears to be an important factor in follower response dynamics. Information theory reveals that mutual information between neuronal pairs is also a function of physical distance. Activation relationships in developing networks were studied and plating density was found to play an important role in network connectivity development. These measures provide unique views of network connectivity and hierarchical relationship in vitro which should be included in biologically meaningful models of neural networks.

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc9775/

### The Nonadditive Generalization of Klimontovich's S-Theorem for Open Systems and Boltzmann's Orthodes

**Date:**August 2008

**Creator:**Bagci, Gokhan Baris

**Description:**We show that the nonadditive open systems can be studied in a consistent manner by using a generalized version of S-theorem. This new generalized S-theorem can further be considered as an indication of self-organization in nonadditive open systems as prescribed by Haken. The nonadditive S-theorem is then illustrated by using the modified Van der Pol oscillator. Finally, Tsallis entropy as an equilibrium entropy is studied by using Boltzmann's method of orthodes. This part of dissertation shows that Tsallis ensemble is on equal footing with the microcanonical, canonical and grand canonical ensembles. However, the associated entropy turns out to be Renyi entropy.

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc9124/

### Oligonucleotide guanosine conjugated to gallium nitride nano-structures for photonics.

**Date:**August 2008

**Creator:**Li, Jianyou

**Description:**In this work, I studied the hybrid system based on self-assembled guanosine crystal (SAGC) conjugated to wide-bandgap semiconductor gallium nitride (GaN). Guanosine is one of the four bases of DNA and has the lowest oxidation energy, which favors carrier transport. It also has large dipole moment. Guanosine molecules self-assemble to ribbon-like structure in confined space. GaN surface can have positive or negative polarity depending on whether the surface is Ga- or N-terminated. I studied SAGC in confined space between two electrodes. The current-voltage characteristics can be explained very well with the theory of metal-semiconductor-metal (MSM) structure. I-V curves also show strong rectification effect, which can be explained by the intrinsic polarization along the axis of ribbon-like structure of SAGC. GaN substrate property influences the properties of SAGC. So SAGC has semiconductor properties within the confined space up to 458nm. When the gap distance gets up to 484nm, the structure with guanosine shows resistance characteristics. The photocurrent measurements show that the bandgap of SAGC is about 3.3-3.4eV and affected by substrate properties. The MSM structure based on SAGC can be used as photodetector in UV region. Then I show that the periodic structure based on GaN and SAGC can have photonic ...

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc9065/

### Emergence of Complexity from Synchronization and Cooperation

**Date:**May 2008

**Creator:**Geneston, Elvis L.

**Description:**The dynamical origin of complexity is an object of intense debate and, up to moment of writing this manuscript, no unified approach exists as to how it should be properly addressed. This research work adopts the perspective of complexity as characterized by the emergence of non-Poisson renewal processes. In particular I introduce two new complex system models, namely the two-state stochastic clocks and the integrate-and-fire stochastic neurons, and investigate its coupled dynamics in different network topologies. Based on the foundations of renewal theory, I show how complexity, as manifested by the occurrence of non-exponential distribution of events, emerges from the interaction of the units of the system. Conclusion is made on the work's applicability to explaining the dynamics of blinking nanocrystals, neuron interaction in the human brain, and synchronization processes in complex networks.

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc6107/

### Microscopic Foundations of Thermodynamics and Generalized Statistical Ensembles

**Date:**May 2008

**Creator:**Campisi, Michele

**Description:**This dissertation aims at addressing two important theoretical questions which are still debated in the statistical mechanical community. The first question has to do with the outstanding problem of how to reconcile time-reversal asymmetric macroscopic laws with the time-reversal symmetric laws of microscopic dynamics. This problem is addressed by developing a novel mechanical approach inspired by the work of Helmholtz on monocyclic systems and the Heat Theorem, i.e., the Helmholtz Theorem. By following a line of investigation initiated by Boltzmann, a Generalized Helmholtz Theorem is stated and proved. This theorem provides us with a good microscopic analogue of thermodynamic entropy. This is the volume entropy, namely the logarithm of the volume of phase space enclosed by the constant energy hyper-surface. By using quantum mechanics only, it is shown that such entropy can only increase. This can be seen as a novel rigorous proof of the Second Law of Thermodynamics that sheds new light onto the arrow of time problem. The volume entropy behaves in a thermodynamic-like way independent of the number of degrees of freedom of the system, indicating that a whole thermodynamic-like world exists at the microscopic level. It is also shown that breaking of ergodicity leads to microcanonical ...

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc6128/

### Multifunctional Organic-Inorganic Hybrid Nanophotonic Devices

**Date:**May 2008

**Creator:**Garner, Brett William

**Description:**The emergence of optical applications, such as lasers, fiber optics, and semiconductor based sources and detectors, has created a drive for smaller and more specialized devices. Nanophotonics is an emerging field of study that encompasses the disciplines of physics, engineering, chemistry, biology, applied sciences and biomedical technology. In particular, nanophotonics explores optical processes on a nanoscale. This dissertation presents nanophotonic applications that incorporate various forms of the organic polymer N-isopropylacrylamide (NIPA) with inorganic semiconductors. This includes the material characterization of NIPA, with such techniques as ellipsometry and dynamic light scattering. Two devices were constructed incorporating the NIPA hydrogel with semiconductors. The first device comprises a PNIPAM-CdTe hybrid material. The PNIPAM is a means for the control of distances between CdTe quantum dots encapsulated within the hydrogel. Controlling the distance between the quantum dots allows for the control of resonant energy transfer between neighboring quantum dots. Whereby, providing a means for controlling the temperature dependent red-shifts in photoluminescent peaks and FWHM. Further, enhancement of photoluminescent due to increased scattering in the medium is shown as a function of temperature. The second device incorporates NIPA into a 2D photonic crystal patterned on GaAs. The refractive index change of the NIPA hydrogel as ...

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc6108/

### Perturbation of renewal processes

**Date:**May 2008

**Creator:**Akin, Osman Caglar

**Description:**Renewal theory began development in the early 1940s, as the need for it in the industrial engineering sub-discipline operations research had risen. In time, the theory found applications in many stochastic processes. In this thesis I investigated the effect of seasonal effects on Poisson and non-Poisson renewal processes in the form of perturbations. It was determined that the statistical analysis methods developed at UNT Center for Nonlinear Science can be used to detect the effects of seasonality on the data obtained from Poisson/non-Poisson renewal systems. It is proved that a perturbed Poisson process can serve as a paradigmatic model for a case where seasonality is correlated to the noise and that diffusion entropy method can be utilized in revealing this relation. A renewal model making a connection with the stochastic resonance phenomena is used to analyze a previous neurological experiment, and it was shown that under the effect of a nonlinear perturbation, a non-Poisson system statistics may make a transition and end up in the of Poisson basin of statistics. I determine that nonlinear perturbation of the power index for a complex system will lead to a change in the complexity characteristics of the system, i.e., the system will reach ...

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc6140/

### Anderson Localization in Two-Channel Wires with Correlated Disorder: DNA as an Application

**Date:**December 2007

**Creator:**Bagci, V. M. Kemal

**Description:**This research studied the Anderson localization of electrons in two-channel wires with correlated disorder and in DNA molecules. It involved an analytical calculation part where the formula for the inverse localization length for electron states in a two-channel wire is derived. It also involved a computational part where the localization length is calculated for some DNA molecules. Electron localization in two-channel wires with correlated disorder was studied using a single-electron tight-binding model. Calculations were within second-order Born-approximation to second-order in disorder parameters. An analytical expression for localization length as a functional of correlations in potentials was found. Anderson localization in DNA molecules were studied in single-channel wire and two-channel models for electron transport in DNA. In both of the models, some DNA sequences exhibited delocalized electron states in their energy spectrum. Studies with two-channel wire model for DNA yielded important link between electron localization properties and genetic information.

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc5204/

### Neutron Transmutation and Hydrogenation Study of Hg₁₋xCdxTe

**Date:**December 2007

**Creator:**Zhao, Wei

**Description:**Anomalous Hall behavior of HgCdTe refers to a "double cross-over" feature of the Hall coefficient in p-type material, or a peak in the Hall mobility or Hall coefficient in n-type material. A magnetoconductivity tensor approach was utilized to identify presence of two electrons contributing to the conduction as well as transport properties of each electron in the material. The two electron model for the mobility shows that the anomalous Hall behavior results from the competition of two electrons, one in the energy gap graded region near the CdZnTe/HgCdTe interface with large band gap and the other in the bulk of the LPE film with narrow band gap. Hg0.78Cd0.22Te samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (~1.7 x 1016 - 1.25 x 1017 /cm2) and subsequently annealed at ~220oC for ~24h in Hg saturated vapor to recover damage and reduce the presence of Hg vacancies. Extensive Magnetotransport measurements were performed on these samples. SIMS profile for impurities produced by neutron irradiation was also obtained. The purpose for this study is to investigate the influence of neutron irradiation on this material as a basis for further study on HgCdTe74Se. The result shows that total ...

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc9126/

### A Novel Process for GeSi Thin Film Synthesis

**Date:**December 2007

**Creator:**Hossain, Khalid

**Description:**A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A dilute GeSi layer is initially formed by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x thin-film with a composition that can be tailored by controlling the oxidation parameters (e.g. temperature and oxidation ambient). In addition, the film thickness can be controlled by implantation fluence, which is important since the film forms pseudomorphically below 2×1016 Ge/cm2. Continued oxidation consumes the underlying Si leaving the strained GeSi film encapsulated by the two oxide layers, i.e. the top thermal oxide and the buried oxide. Removal of the thermal oxide by a dilute HF etch completes the process. Strain relaxation can be achieved by either of two methods. One involves vacancy injection by ion implantation to introduce sufficient open-volume within the film to compensate for the compressive strain. The other depends upon the formation of GeO2. If Ge is oxidized in the absence of Si, it evaporates as GeO(g) resulting in spontaneous ...

**Contributing Partner:**UNT Libraries

**Permallink:**digital.library.unt.edu/ark:/67531/metadc5167/