Description: The physical behavior of crystalline solids is very closely related to the internal symmetry of the crystal structure. For this reason it is desirable to represent mathematically this symmetry in such a way that the actual physical problems can be handled as they arise. In the case of this thesis the research has been guided by a list of desired properties for such a representation. No claim is made that the list is complete.

Description: This thesis describes the design and construction of a linear accelerator, specifically, a positive-ion source, a high voltage supply, an accelerating column, and the necessary associated vacuum system.

Description: The practical method of applying the variation principle to the calculation of the energy of an atom demands a trial function which contains variable parameters. The previous work done using this approach was based on the use of some combination of hydrogenic wave functions containing parameters inserted in appropriate places. The present calculation of the energy of the eleven-electron atom has been brought about using this method.

Description: We show that the nonadditive open systems can be studied in a consistent manner by using a generalized version of S-theorem. This new generalized S-theorem can further be considered as an indication of self-organization in nonadditive open systems as prescribed by Haken. The nonadditive S-theorem is then illustrated by using the modified Van der Pol oscillator. Finally, Tsallis entropy as an equilibrium entropy is studied by using Boltzmann's method of orthodes. This part of dissertation shows that Tsallis ensemble is on equal footing with the microcanonical, canonical and grand canonical ensembles. However, the associated entropy turns out to be Renyi entropy.

Description: A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over its complimentary defect (i.e., a vacancy). Mechanisms for producing such excesses by implantation will be discussed. The basis of this model specifies that accumulation of stable lattice damage during implantation depends upon the excess defects and not the total number of defects. The excess defect model is validated by fundamental damage studies involving ion implantation over a range of conditions. Confirmation of the model is provided by comparing damage profiles after implantation with computer simulation results. It will be shown that transport of ions in matter (TRIM) can be used effectively to model the ion-induced damage profile, i.e. excess defect distributions, by a simple subtraction process in which the spatially correlated defects are removed, thereby simulating recombination. Classic defect studies ...