You limited your search to:

  Partner: UNT Libraries
 Degree Discipline: Physics
 Degree Level: Doctoral
Electron Density and Collision Frequency Studies Using a Resonant Microwave Cavity as a Probe

Electron Density and Collision Frequency Studies Using a Resonant Microwave Cavity as a Probe

Date: May 1973
Creator: Freeman, Ronald Harold
Description: Electron densities and collision frequencies were obtained on a number of gases in a dc discharge at low pressures (0.70-2mm of Hg). These measurements were performed by microwave probing of a filament of the dc discharge placed coaxially in a resonant cavity operating in a TM₀₁₀ mode. The equipment and techniques for making the microwave measurements employing the resonant cavity are described. One of the main features of this investigation is the technique of differentiating the resonance signal of the loaded cavity in order to make accurate measurements of the resonant frequency and half-power point frequencies.
Contributing Partner: UNT Libraries
A New Approach for Transition Metal Free Magnetic Sic: Defect Induced Magnetism After Self-ion Implantation

A New Approach for Transition Metal Free Magnetic Sic: Defect Induced Magnetism After Self-ion Implantation

Date: May 2013
Creator: Kummari, Venkata Chandra Sekhar
Description: SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil industry, nuclear power systems, aeronautical, and space applications. SiC is also known for its polytypism and among them 3C-SiC, 4H-SiC and 6H-SiC are the most common polytypes used for research purposes. Among these polytypes 4H-SiC is gaining importance due to its easy commercial availability with a large bandgap of 3.26 eV at room temperature. Controlled creation of defects in materials is an approach to modify the electronic properties in a way that new functionality may result. SiC is a promising candidate for defect-induced magnetism on which spintronic devices could be developed. The defects considered are of room temperature stable vacancy types, eliminating the need for magnetic impurities, which easily diffuse at room temperature. Impurity free vacancy type defects can be created by implanting the host atoms of silicon or carbon. The implantation fluence determines the defect density, which is a critical parameter for defect induced magnetism. Therefore, we have studied the influence ...
Contributing Partner: UNT Libraries
Investigation of the Uniaxial Stress Dependence of the Effective Mass in N-Type InSb Using the Magnetophonon Effect

Investigation of the Uniaxial Stress Dependence of the Effective Mass in N-Type InSb Using the Magnetophonon Effect

Date: December 1971
Creator: Alsup, Dale Lynn
Description: The magnetophonon effect was used to investigate the uniaxial stress dependence of the effective mass in n-type InSb (indium antimonide).
Contributing Partner: UNT Libraries
A Study of Minority Atomic Ion Recombination in the Helium Afterglow

A Study of Minority Atomic Ion Recombination in the Helium Afterglow

Date: August 1972
Creator: Wells, William E.
Description: Electron-ion recombination has been under study for many years, but comparisons between theory and experiment have been very difficult, especially for conditions where the ion under evaluation was a minority in concentration. This study describes a direct measurement of the recombination-rate coefficient for the recombination of minority as well as majority ions in the afterglow.
Contributing Partner: UNT Libraries
On Chaos and Anomalous Diffusion in Classical and Quantum Mechanical Systems

On Chaos and Anomalous Diffusion in Classical and Quantum Mechanical Systems

Date: August 1998
Creator: Stefancich, Marco
Description: The phenomenon of dynamically induced anomalous diffusion is both the classical and quantum kicked rotor is investigated in this dissertation. We discuss the capability of the quantum mechanical version of the system to reproduce for extended periods the corresponding classical chaotic behavior.
Contributing Partner: UNT Libraries
Steady-state and Dynamic Probe Characteristics in a Low-density Plasma

Steady-state and Dynamic Probe Characteristics in a Low-density Plasma

Date: December 1970
Creator: Bunting, William David
Description: The problem with which this investigation is concerned is that of determining the steady-state and dynamic characteristics of the admittance of a metallic probe immersed in a laboratory plasma which has the low electron densities and low electron temperatures characteristic of the ionospheric plasma. The problem is separated into three related topics: the design and production of the laboratory plasma, the measurement of the steady-state properties of dc and very low frequency probe admittance, and the study of transient ion sheath effects on radio frequency probe admittance.
Contributing Partner: UNT Libraries
Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Date: May 1999
Creator: Venezia, Vincent C.
Description: High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in MeV Si-implanted silicon both during implantation and post-implant annealing. Although previous investigations have identified a vacancy excess in MeV-implanted silicon, the investigations presented in this dissertation are unique in that they are designed to correlate the free-vacancy supersaturation with the vacancies in clusters. Free-vacancy (and interstitial) supersaturations were measured with Sb (B) dopant diffusion markers. Vacancies in clusters were profiled by Au labeling; a new technique based on the observation that Au atoms trap in the presence of open-volume defects. The experiments described in this dissertation are also unique in that they were designed to isolate the deep interstitial excess from interacting with the much shallower vacancy excess during post-implant thermal processing.
Contributing Partner: UNT Libraries
Zinc Oxide Nanoparticles for Nonlinear Bioimaging, Cell Detection and Selective Cell Destruction

Zinc Oxide Nanoparticles for Nonlinear Bioimaging, Cell Detection and Selective Cell Destruction

Access: Use of this item is restricted to the UNT Community.
Date: May 2013
Creator: Urban, Ben E.
Description: Light matter interactions have led to a great part of our current understanding of the universe. When light interacts with matter it affects the properties of both the light and the matter. Visible light, being in the region that the human eye can "see," was one of the first natural phenomenon we used to learn about our universe. The application of fundamental physics research has spilled over into other fields that were traditionally separated from physics, being considered two different sciences. Current physics research has applications in all scientific fields. By taking a more physical approach to problems in fields such as chemistry and biology, we have furthered our knowledge of both. Nanocrystals have many interesting optical properties. Furthermore, the size and properties of nanocrystals has given them applications in materials ranging from solar cells to sunscreens. By understanding and controlling their interactions with systems we can utilize them to increase our knowledge in other fields of science, such as biology. Nanocrystals exhibit optical properties superior to currently used fluorescent dyes. By replacing molecular dyes with nanoparticles we can reduce toxicity, increase resolution and have better cellular targeting abilities. They have also shown to have toxicity to cancer and antibacterial ...
Contributing Partner: UNT Libraries
Criticality in Cooperative Systems

Criticality in Cooperative Systems

Date: May 2012
Creator: Vanni, Fabio
Description: Cooperative behavior arises from the interactions of single units that globally produce a complex dynamics in which the system acts as a whole. As an archetype I refer to a flock of birds. As a result of cooperation the whole flock gets special abilities that the single individuals would not have if they were alone. This research work led to the discovery that the function of a flock, and more in general, that of cooperative systems, surprisingly rests on the occurrence of organizational collapses. In this study, I used cooperative systems based on self-propelled particle models (the flock models) which have been proved to be virtually equivalent to sociological network models mimicking the decision making processes (the decision making model). The critical region is an intermediate condition between a highly disordered state and a strong ordered one. At criticality the waiting times distribution density between two consecutive collapses shows an inverse power law form with an anomalous statistical behavior. The scientific evidences are based on measures of information theory, correlation in time and space, and fluctuation statistical analysis. In order to prove the benefit for a system to live at criticality, I made a flock system interact with another similar ...
Contributing Partner: UNT Libraries
Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Date: May 2011
Creator: Poudel, Prakash Raj
Description: The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process ...
Contributing Partner: UNT Libraries
FIRST PREV 1 2 3 4 5 NEXT LAST