Low-Energy Electron Irradiation of 2D Graphene and Stability Investigations of 2D MoS2
Description:
In this work, we demonstrate the mechanism for etching exfoliated graphene on SiO2 and other technological important substrates (Si, SiC and ITO), using low-energy electron sources. Our mechanism is based on helium ion sputtering and vacancy formation. Helium ions instead of incident electrons cause the defects that oxygen reacts with and etches graphene. We found that etching does not occur on low-resistivity Si and ITO. Etching occurs on higher resistivity Si and SiC, although much less than …
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Date:
August 2021
Creator:
Femi Oyetoro, John Dideoluwa