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  Partner: UNT Libraries
 Department: Department of Physics
 Decade: 1990-1999
Characterization and Field Emission Properties of Mo2C and Diamond Thin Films Deposited on Mo Foils and Tips by Electrophoresis

Characterization and Field Emission Properties of Mo2C and Diamond Thin Films Deposited on Mo Foils and Tips by Electrophoresis

Date: August 1999
Creator: Rouse, Ambrosio A., 1960-
Description: In this dissertation M02C and diamond films deposited by electrophoresis on flat Mo foils and tips have been studied to determine their suitability as field emission tips.
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Charge State Distributions in Molecular Dissociation

Charge State Distributions in Molecular Dissociation

Date: December 1998
Creator: Renfrow, Steven N. (Steven Neal)
Description: The present work provides charge state fractions that may be used to generate TEAMS relative sensitivity factors for impurities in semiconductor materials.
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Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Date: May 1999
Creator: Venezia, Vincent C.
Description: High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in MeV Si-implanted silicon both during implantation and post-implant annealing. Although previous investigations have identified a vacancy excess in MeV-implanted silicon, the investigations presented in this dissertation are unique in that they are designed to correlate the free-vacancy supersaturation with the vacancies in clusters. Free-vacancy (and interstitial) supersaturations were measured with Sb (B) dopant diffusion markers. Vacancies in clusters were profiled by Au labeling; a new technique based on the observation that Au atoms trap in the presence of open-volume defects. The experiments described in this dissertation are also unique in that they were designed to isolate the deep interstitial excess from interacting with the much shallower vacancy excess during post-implant thermal processing.
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Expulsion of Carriers from the Double-Barrier Quantum Well and Investigation of Its Spectral and Transport Consequences

Expulsion of Carriers from the Double-Barrier Quantum Well and Investigation of Its Spectral and Transport Consequences

Date: March 1992
Creator: Chyla, Wojciech Tadeusz
Description: In this work I investigate the expulsion of carriers from nanostructures using the double-barrier quantum well (DBQW) as an example and discuss manifestations of this effect in the spectrum of the DBQW in absence of bias, and in the tunneling current in presence of bias. Assuming equality of the Fermi energy in all regions of the considered system, I compute the relative density of carriers localized in the DBQW and conclude that a fraction of carriers is expelled from this nanostructure.
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Fluorine Adsorption and Diffusion in Polycrystalline Silica

Fluorine Adsorption and Diffusion in Polycrystalline Silica

Date: December 1998
Creator: Jin, Jian-Yue
Description: The measurement of fluorine penetration into archeological flint artifacts using Nuclear Reaction Analysis (NRA) has been reported to be a potential dating method. However, the mechanism of how fluorine is incorporated into the flint surface, and finally transported into the bulk is not well understood. This research focuses on the study of the fluorine uptake phenomenon of flint mineral in aqueous fluoride solutions. Both theoretical and experimental approaches have been carried out. In a theoretical approach, a pipe-diffusion model was used to simulate the complicated fluorine transportation problem in flint, in which several diffusion mechanisms may be involved.
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Magneto-Optical and Chaotic Electrical Properties of n-InSb

Magneto-Optical and Chaotic Electrical Properties of n-InSb

Date: December 1991
Creator: Song, Xiang-Ning
Description: This thesis investigation concerns the optical and nonlinear electrical properties of n-InSb. Two specific areas have been studied. First is the magneto-optical study of magneto-donors, and second is the nonlinear dynamic study of nonlinear and chaotic oscillations in InSb. The magneto-optical study of InSb provides a physical picture of the magneto-donor levels, which has an important impact on the physical model of nonlinear and chaotic oscillations. Thus, the subjects discussed in this thesis connect the discipline of semiconductor physics with the field of nonlinear dynamics.
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On Chaos and Anomalous Diffusion in Classical and Quantum Mechanical Systems

On Chaos and Anomalous Diffusion in Classical and Quantum Mechanical Systems

Date: August 1998
Creator: Stefancich, Marco
Description: The phenomenon of dynamically induced anomalous diffusion is both the classical and quantum kicked rotor is investigated in this dissertation. We discuss the capability of the quantum mechanical version of the system to reproduce for extended periods the corresponding classical chaotic behavior.
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On Delocalization Effects in Multidimensional Lattices

On Delocalization Effects in Multidimensional Lattices

Date: May 1998
Creator: Bystrik, Anna
Description: A cubic lattice with random parameters is reduced to a linear chain by the means of the projection technique. The continued fraction expansion (c.f.e.) approach is herein applied to the density of states. Coefficients of the c.f.e. are obtained numerically by the recursion procedure. Properties of the non-stationary second moments (correlations and dispersions) of their distribution are studied in a connection with the other evidences of transport in a one-dimensional Mori chain. The second moments and the spectral density are computed for the various degrees of disorder in the prototype lattice. The possible directions of the further development are outlined. The physical problem that is addressed in the dissertation is the possibility of the existence of a non-Anderson disorder of a specific type. More precisely, this type of a disorder in the one-dimensional case would result in a positive localization threshold. A specific type of such non-Anderson disorder was obtained by adopting a transformation procedure which assigns to the matrix expressing the physics of the multidimensional crystal a tridiagonal Hamiltonian. This Hamiltonian is then assigned to an equivalent one-dimensional tight-binding model. One of the benefits of this approach is that we are guaranteed to obtain a linear crystal with a ...
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Photoelectric Emission Measurements for CVD Grown Polycrystalline Diamond Films

Photoelectric Emission Measurements for CVD Grown Polycrystalline Diamond Films

Date: August 1999
Creator: Hassan, Tarek
Description: We examined CVD grown polycrystalline diamond films having different methane concentrations to detect defects and study the possible correlation between the methane concentration used during the growth process and the defect density. SEM and Raman results show that the amorphous and sp2 carbon content of the films increases with methane concentration. Furthermore, photoelectric emission from diamond is confirmed to be a two-photon process, hence the electrons are emitted from normally unoccupied states. We found that the photoelectric yield, for our samples, decreases with the increase in methane concentration. This trend can be accounted for in two different ways: either the types of defects observed in this experiment decrease in density as the methane concentration increases; or, the defect density stays the same or increases, but the increase in methane concentration leads to an increase in the electron affinity, which reduces the overall photoelectric yield.
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Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors

Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors

Date: August 1999
Creator: Stark, Thomas S.
Description: Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams having only a few milliwatts of average power.Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have attempted to measure the fundamental temporal dynamics of the photorefractive effect in semiconductors using continuous-wave, nanosecond- and picosecond-pulsed laser beams, these investigations have been unsuccessful. However, studies with this goal are of clear relevance because they provide information about the fundamental physical processes that produce this effect, as well as the material's speed and efficiency limitations for device applications.In this dissertation, for the first time, we time-resolve the temporal dynamics of the photorefractive nonlinearities in two zincblende semiconductors, ...
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