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 Department: Department of Materials Science and Engineering
Effect of Alloy Composition, Free Volume and Glass Formability on the Corrosion Behavior of Bulk Metallic Glasses

Effect of Alloy Composition, Free Volume and Glass Formability on the Corrosion Behavior of Bulk Metallic Glasses

Date: December 2015
Creator: Ayyagari, Venkata Aditya
Description: Bulk metallic glasses (BMGs) have received significant research interest due to their completely amorphous structure which results in unique structural and functional properties. Absence of grain boundaries and secondary phases in BMGs results in high corrosion resistance in many different environments. Understanding and tailoring the corrosion behavior can be significant for various structural applications in bulk form as well as coatings. In this study, the corrosion behavior of several Zr-based and Fe-Co based BMGs was evaluated to understand the effect of chemistry as well as quenched in free volume on corrosion behavior and mechanisms. Presence of Nb in Zr-based alloys was found to significantly improve corrosion resistance due to the formation of a stable passive oxide. Relaxed glasses showed lower rates compared to the as-cast alloys. This was attributed to lowering of chemical potential from the reduced fraction of free volume. Potentiodynamic polarization and Electrochemical Impedance Spectroscopy (EIS) techniques helped in quantifying the corrosion rate and polarization resistance. The effect of alloy composition was quantified by extensive surface analysis using Raman spectroscopy, energy dispersive x-ray spectroscopy and auger spectroscopy. Pitting intensity was higher in the as-cast glasses than the relaxed glasses. The electrochemical behavior of a Zr-Ti-Cu-Ni-Be bulk metallic glass ...
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Effect of Retting on Surface Chemistry and Mechanical Performance Interactions in Natural Fibers for High Performance Polymer Composites

Effect of Retting on Surface Chemistry and Mechanical Performance Interactions in Natural Fibers for High Performance Polymer Composites

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Date: May 2013
Creator: Ramesh, Dinesh
Description: Sustainability through replacement of non-renewable fibers with renewable fibers is an ecological need. Impact of transportation costs from South-east Asia on the life cycle analysis of the composite is detrimental. Kenaf is an easily grown crop in America. Farm based processing involves placing the harvested crop in rivers and ponds, where retting of the fibers from the plant (separation into fibers) can take 2 weeks or more. The objective of this thesis is to analyze industrially viable processes for generating fibers and examine their synergistic impact on mechanical performance, surface topography and chemistry for functional composites. Comparison has been made with commercial and conventional retting process, including alkali retting, enzymatic retting, retting in river and pond water (retting occurs by natural microbial population) with controlled microbial retting. The resulting kenaf fibers were characterized by dynamic mechanical analysis (DMA), Raman spectroscopy (FT-Raman), Fourier transform infrared spectroscopy (FT-IR), polarized optical microscopy (POM), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM) optical fluorescence microscopy, atomic force microscopy (AFM) and carbohydrate analysis. DMA results showed that pectinase and microbe treated fibers have superior viscoelastic properties compared to alkali retting. XPS, Raman, FT-IR and biochemical analysis indicated that the controlled microbial and pectinase retting was ...
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Effect of Silyation on Organosilcate Glass Films

Effect of Silyation on Organosilcate Glass Films

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Date: August 2004
Creator: Kadam, Poonam
Description: Photoresist stripping with oxygen plasma ashing destroys the functional groups in organosilicate glass films and induce moisture uptake, causing low-k dielectric degradation. In this study, hexamethyldisilazane (HMDS), triethylchlorosilane and tripropylchlorosilane are used to repair the damage to organosilicate glass by the O2 plasma ashing process. The optimization of the surface functionalization of the organosilicate glass by the silanes and the thermal stability of the functionalized surfaces are investigated. These experimental results show that HMDS is a promising technique to repair the damage to OSG during the photoresist removal processing and that the heat treatment of the functionalized surfaces causes degradation of the silanes deteriorating the hydrophobicity of the films.
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Effects of Plasma, Temperature and Chemical Reactions on Porous Low Dielectric Films for Semiconductor Devices

Effects of Plasma, Temperature and Chemical Reactions on Porous Low Dielectric Films for Semiconductor Devices

Date: December 2010
Creator: Osei-Yiadom, Eric
Description: Low-dielectric (k) films are one of the performance drivers for continued scaling of integrated circuit devices. These films are needed in microelectronic device interconnects to lower power consumption and minimize cross talk between metal lines that "interconnect" transistors. Low-k materials currently in production for the 45 and 65 nm node are most often organosilicate glasses (OSG) with dielectric constants near 2.8 and nominal porosities of 8-10%. The next generation of low-k materials will require k values 2.6 and below for the 45 nm device generation and beyond. The continuous decrease in device dimensions in ultra large scale integrated (ULSI) circuits have brought about the replacement of the silicon dioxide interconnect dielectric (ILD), which has a dielectric constant (k) of approximately 4.1, with low dielectric constant materials. Lowering the dielectric constant reduces the propagation delays, RC constant (R = the resistance of the metal lines; C = the line capacitance), and metal cross-talk between wires. In order to reduce the RC constants, a number of low-k materials have been studied for use as intermetal dielectrics. The k values of these dielectric materials can be lowered by replacing oxide films with carbon-based polymer films, incorporating hydrocarbon functional groups into oxide films (SiOCH ...
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Electrical and Structure Properties of High-κ Barium Tantalite and Aluminum Oxide Interface with Zinc Oxide for Applications in Transparent Thin Film Transistors

Electrical and Structure Properties of High-κ Barium Tantalite and Aluminum Oxide Interface with Zinc Oxide for Applications in Transparent Thin Film Transistors

Date: August 2011
Creator: Kuo, Fang-Ling
Description: ZnO has generated interest for flexible electronics/optoelectronic applications including transparent thin film transistors (TFTs). For this application, low temperature processes that simultaneously yield good electrical conductivity and optical transparency and that are compatible with flexible substrates such as plastic, are of paramount significance. Further, gate oxides are a critical component of TFTs, and must exhibit low leakage currents and self-healing breakdown in order to ensure optimal TFTs switching performance and reliability. Thus, the objective of this work was twofold: (1) develop an understanding of the processing-structure-property relationships of ZnO and high-κ BaTa2O6 and Al2O3 (2) understand the electronic defect structure of BaTa2O6 /ZnO and Al2O3/ZnO interfaces and develop insight to how such interfaces may impact the switching characteristics (speed and switching power) of TFTs featuring these materials. Of the ZnO films grown by atomic layer deposition (ALD), pulsed laser deposition (PLD) and magnetron sputtering at 100-200 °C, the latter method exhibited the best combination of n-type electrical conductivity and optical transparency. These determinations were made using a combination of photoluminescence, photoluminescence excitation, absorption edge and Hall measurements. Metal-insulator-semiconductor devices were then fabricated with sputtered ZnO and high-κ BaTa2O6 and Al2O3 and the interfaces of high-κ BaTa2O6 and Al2O3 with ZnO ...
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Electrochemical synthesis of CeO2 and CeO2/montmorillonite nanocomposites.

Electrochemical synthesis of CeO2 and CeO2/montmorillonite nanocomposites.

Date: December 2003
Creator: Wang, Qi
Description: Nanocrystalline cerium oxide thin films on metal and semiconductor substrates have been fabricated with a novel electrodeposition approach - anodic oxidation. X-ray diffraction analysis indicated that as-produced cerium oxide films are characteristic face-centered cubic fluorite structure with 5 ~ 20 nm crystal sizes. X-ray photoelectron spectroscopy study probes the non-stoichiometry property of as-produced films. Raman spectroscopy and Scanning Electron Microscopy have been applied to analyze the films as well. Deposition mode, current density, reaction temperature and pH have also been investigated and the deposition condition has been optimized for preferred oriented film formation: galvanostatic deposition with current density of -0.06 mA/cm2, T > 50oC and 7 < pH < 10. Generally, potentiostatic deposition results in random structured cerium oxide films. Sintering of potentiostatic deposited cerium oxide films leads to crystal growth and reach nearly full density at 1100oC. It is demonstrated that in-air heating favors the 1:2 stoichiometry of CeO2. Nanocrystalline cerium oxide powders (4 ~ 10 nm) have been produced with anodic electrochemical synthesis. X-ray diffraction and Raman spectroscopy were employed to investigate lattice expansion phenomenon related to the nanoscale cerium oxide particles. The pH of reaction solution plays an important role in electrochemical synthesis of cerium oxide films ...
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Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films.

Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films.

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Date: August 2006
Creator: Ukirde, Vaishali
Description: Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using hydrogen to improve electronic performance of electronic structures. Trap transformations under annealing treatments in hydrogen ambient normally involve passivation of traps at thermal SiO2/Si interfaces by hydrogen. High-κ dielectric films are believed to exhibit significantly higher charge trapping affinity than SiO2. In this thesis, study of hydrogen trapping in alternate gate dielectric candidates such as HfO2 during annealing in hydrogen ambient is presented. Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA) were used to characterize these thin dielectric materials. It was demonstrated that hydrogen trapping in bulk HfO2 is significantly reduced for pre-oxidized HfO2 prior to forming gas anneals. This strong dependence on oxygen pre-processing is believed to be due to oxygen vacancies/deficiencies and hydrogen-carbon impurity complexes that originate from organic precursors used in ...
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First Principle Calculations of the Structure and Electronic Properties of Pentacene Based Organic and ZnO Based Inorganic Semiconducting Materials

First Principle Calculations of the Structure and Electronic Properties of Pentacene Based Organic and ZnO Based Inorganic Semiconducting Materials

Date: May 2012
Creator: Li, Yun
Description: In this thesis, I utilize first principles density functional theory (DFT) based calculations to investigate the structure and electronic properties including charge transfer behaviors and work function of two types of materials: pentacene based organic semiconductors and ZnO transparent conducting oxides, with an aim to search for high mobility n-type organic semiconductors and fine tuning work functions of ZnO through surface modifications. Based on DFT calculations of numerous structure combinations, I proposed a pentacene and perfluoro-pentacene alternating hybrid structures as a new type of n-type semiconductor. Based on the DFT calculations and Marcus charge transfer theory analysis, the new structure has high charge mobility and can be a promising new n-type organic semiconductor material. DFT calculations have been used to systematically investigate the effect of surface organic absorbate and surface defects on the work function of ZnO. It was found that increasing surface coverage of organic groups and decreasing surface defects lead to decrease of work functions, in excellent agreement with experimental results. First principles based calculations thus can greatly contribute to the investigating and designing of new electronic materials.
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First Principles Calculations of the Site Substitution Behavior in Gamma Prime Phase in Nickel Based Superalloys

First Principles Calculations of the Site Substitution Behavior in Gamma Prime Phase in Nickel Based Superalloys

Date: August 2012
Creator: Chaudhari, Mrunalkumar
Description: Nickel based superalloys have superior high temperature mechanical strength, corrosion and creep resistance in harsh environments and found applications in the hot sections as turbine blades and turbine discs in jet engines and gas generator turbines in the aerospace and energy industries. The efficiency of these turbine engines depends on the turbine inlet temperature, which is determined by the high temperature strength and behavior of these superalloys. The microstructure of nickel based superalloys usually contains coherently precipitated gamma prime (?) Ni3Al phase within the random solid solution of the gamma () matrix, with the ? phase being the strengthening phase of the superalloys. How the alloying elements partition into the and ? phases and especially in the site occupancy behaviors in the strengthening ? phases play a critical role in their high temperature mechanical behaviors. The goal of this dissertation is to study the site substitution behavior of the major alloying elements including Cr, Co and Ti through first principles based calculations. Site substitution energies have been calculated using the anti-site formation, the standard defect formation formalism, and the vacancy formation based formalism. Elements such as Cr and Ti were found to show strong preference for Al sublattice, whereas Co ...
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First Principles Study of Metastable Beta Titanium Alloys

First Principles Study of Metastable Beta Titanium Alloys

Date: August 2015
Creator: Gupta, Niraj
Description: The high temperature BCC phase (b) of titanium undergoes a martensitic transformation to HCP phase (a) upon cooling, but can be stabilized at room temperature by alloying with BCC transition metals such as Mo. There exists a metastable composition range within which the alloyed b phase separates into a + b upon equilibrium cooling but not when rapidly quenched. Compositional partitioning of the stabilizing element in as-quenched b microstructure creates nanoscale precipitates of a new simple hexagonal w phase, which considerably reduces ductility. These phase transformation reactions have been extensively studied experimentally, yet several significant questions remain: (i) The mechanism by which the alloying element stabilizes the b phase, thwarts its transformation to w, and how these processes vary as a function of the concentration of the stabilizing element is unclear. (ii) What is the atomistic mechanism responsible for the non-Arrhenius, anomalous diffusion widely observed in experiments, and how does it extend to low temperatures? How does the concentration of the stabilizing elements alter this behavior? There are many other w forming alloys that such exhibit anomalous diffusion behavior. (iii) A lack of clarity remains on whether w can transform to a -phase in the crystal bulk or if it ...
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