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Department of Materials Science and Engineering
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Degree Discipline:
Materials Science and Engineering
Degree Level:
Master's
Development of a Novel Grease Resistant Functional Coatings for Paper-based Packaging and Assessment of Application by Flexographic Press
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Date: August 2004
Creator: Brown, Robert W.
Description: Recent commercial developments have created a need for alternative materials and methods for imparting oil/grease resistance to paper and/or paperboard used in packaging. The performance of a novel grease resistant functional coating comprised of polyvinyl alcohol (PVA), sodium tetraborate pentahydrate (borate) and acetonedicarboxylic acid (ACDA) and the application of said coating by means of flexographic press is presented herein. Application criteria is developed, testing procedures described, and performance assessment of the developed coating materials are made. SEM images along with contact angle data suggest that coating performance is probably attributable to decreased mean pore size in conjunction with a slightly increased surface contact angle facilitated by crosslinking of PVA molecules by both borate ions and ACDA.
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Effect of Silyation on Organosilcate Glass Films
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Date: August 2004
Creator: Kadam, Poonam
Description: Photoresist stripping with oxygen plasma ashing destroys the functional groups in organosilicate glass films and induce moisture uptake, causing low-k dielectric degradation. In this study, hexamethyldisilazane (HMDS), triethylchlorosilane and tripropylchlorosilane are used to repair the damage to organosilicate glass by the O2 plasma ashing process. The optimization of the surface functionalization of the organosilicate glass by the silanes and the thermal stability of the functionalized surfaces are investigated. These experimental results show that HMDS is a promising technique to repair the damage to OSG during the photoresist removal processing and that the heat treatment of the functionalized surfaces causes degradation of the silanes deteriorating the hydrophobicity of the films.
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Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films.
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Date: August 2006
Creator: Ukirde, Vaishali
Description: Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using hydrogen to improve electronic performance of electronic structures. Trap transformations under annealing treatments in hydrogen ambient normally involve passivation of traps at thermal SiO2/Si interfaces by hydrogen. High-κ dielectric films are believed to exhibit significantly higher charge trapping affinity than SiO2. In this thesis, study of hydrogen trapping in alternate gate dielectric candidates such as HfO2 during annealing in hydrogen ambient is presented. Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA) were used to characterize these thin dielectric materials. It was demonstrated that hydrogen trapping in bulk HfO2 is significantly reduced for pre-oxidized HfO2 prior to forming gas anneals. This strong dependence on oxygen pre-processing is believed to be due to oxygen vacancies/deficiencies and hydrogen-carbon impurity complexes that originate from organic precursors used in ...
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Indentation induced deformation in metallic materials.
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Date: December 2005
Creator: Vadlakonda, Suman
Description: Nanoindentation has brought in many features of research over the past decade. This novel technique is capable of producing insights into the small ranges of deformation. This special point has brought a lot of focus in understanding the deformation behavior under the indenter. Nickel, iron, tungsten and copper-niobium alloy system were considered for a surface deformation study. All the samples exhibited a spectrum of residual deformation. The change in behavior with indentation and the materials responses to deformation at low and high loads is addressed in this study. A study on indenter geometry, which has a huge influence on the contact area and subsequently the hardness and modulus value, has been attempted. Deformation mechanisms that govern the plastic flow in materials at low loads of indentation and their sensitivity to the rate of strain imparted has been studied. A transition to elastic, plastic kind of a tendency to an elasto-plastic tendency was seen with an increase in the strain rate. All samples exhibited the same kind of behavior and a special focus is drawn in comparing the FCC nickel with BCC tungsten and iron where the persistence of the elastic, plastic response was addressed. However there is no absolute reason ...
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Study of Conductance Quantization by Cross-Wire Junction
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Date: May 2004
Creator: Zheng, Tao
Description: The thesis studied quantized conductance in nanocontacts formed between two thin gold wires with one of the wires coated by alkainthiol self assembly monolayers (SAM), by using the cross-wire junction. Using the Lorenz force as the driving force, we can bring the two wires in contact in a controlled manner. We observed conductance with steps of 2e2 / h. The conductance plateaus last several seconds. The stability of the junction is attributed to the fact that the coating of SAM improves the stability and capability of the formed contact.
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Supercritical Silylation and Stability of Silyl Groups
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Date: May 2006
Creator: Nerusu, Pawan Kumar
Description: Methylsilsesquioxane (MSQ) and organosilicate glass (OSG) are the materials under this study because they exhibit the dielectric constant values necessary for future IC technology requirements. Obtaining a low-k dielectric value is critical for the IC industry in order to cope time delay and cross talking issues. These materials exhibit attractive dielectric value, but there are problems replacing conventional SiO2, because of their chemical, mechanical and electrical instability after plasma processing. Several techniques have been suggested to mitigate process damage but supercritical silylation offers a rapid single repair step solution to this problem. Different ash and etch damaged samples were employed in this study to optimize an effective method to repair the low-k dielectric material and seal the surface pores via supercritical fluid processing with various trialkylchlorosilanes. Fourier transform infrared spectroscopy (FTIR), contact angle, capacitance- voltage measurements, and x-ray photoemission spectroscopy, dynamic secondary ion mass spectroscopy (DSIMS), characterized the films. The hydrophobicity and dielectric constant after exposure to elevated temperatures and ambient conditions were monitored and shown to be stable. The samples were treated with a series of silylating agents of the form R3-Si-Cl where R is an alkyl groups (e.g. ethyl, propyl, isopropyl). Reactivity with the surface hydroxyls was inversely ...
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Topics in micro electromechanical systems: MEMS engineering and alternative materials for MEMS fabrication.
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Date: August 2004
Creator: Chapla, Kevin
Description: This paper deals with various topics in micro electromechanical systems (MEMS) technology beginning with microactuation, MEMS processing, and MEMS design engineering. The fabrication and testing of three separate MEMS devices are described. The first two devices are a linear stepping motor and a continuous rotary motor, respectively; and were designed for the purpose of investigating the frictional and wear properties of silicon components. The third device is a bi-stable microrelay, in which electrical current conducts through a secondary circuit, via a novel probe-interconnect mechanism. The second half focuses on engineering a carbon nanotube / SU-8 photoepoxy nanocomposite for fabricating MEMS devices. A processing method for this material as well as the initial results of characterization, are discussed.
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A Wet Etch Release Method for Silicon Microelectromechanical Systems (MEMS) Using Polystyrene Microspheres for Improved Yield
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Date: May 2004
Creator: Mantiziba, Fadziso
Description: One of the final steps in fabricating microelectromechanical devices often involves a liquid etch release process. Capillary forces during the liquid evaporation stage after the wet etch process can pull two surfaces together resulting in adhesion of suspended microstructures to the supporting substrate. This release related adhesion can greatly reduce yields. In this report, a wet etch release method that uses polystyrene microspheres in the final rinse liquid is investigated. The polystyrene microspheres act as physical barriers between the substrate and suspended microstructures during the final liquid evaporation phase. A plasma ashing process is utilized to completely remove the polystyrene microspheres from the microstructure surfaces. Using this process, release yields > 90% were achieved. It is found that the surface roughness of gold surfaces increases while that of the silicon is reduced due to a thin oxide that grows on the silicon surface during the plasma process.
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