UNT Scholarly Works - 1 Matching Results
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- Deep Submicron Extended-Gate Field-Effect (EGFET) Based on Transistor Association Technique for Chemical Sensing
- This article investigates the design and characterization of a transistor association (TA)-based extended-gate field-effect transistor (EGFET). Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature.