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  Partner: UNT College of Arts and Sciences
 Department: Materials Science and Engineering
 Collection: UNT Scholarly Works
Modified embedded atom method study of the mechanical properties of carbon nanotube reinforced nickel composites
This article discusses an atomistic simulation study of the behavior of nanocomposite materials that are formed by incorporating single-walled carbon nanotubes (SWCNTs), with three different diameters, and a multiwalled carbon nanotube (MWCNT) into a single-crystal nickel matrix. digital.library.unt.edu/ark:/67531/metadc107769/
Spontaneous coordinated activity in cultured networks: analysis of multiple ignition sites, primary circuits, and burst phase delay distributions
This article discusses an analysis of multiple ignition sites, primary circuits, and burst phase delay distributions. digital.library.unt.edu/ark:/67531/metadc139463/
K-shell x-ray-production cross sections in 6C, 8O, 9F, 11Na, 12Mg, and 13Al, by 0.75- to 4.5-MeV protons
This article discusses K-shell x-ray-production cross sections. Abstract: K-shell x-ray-production cross sections are reported for elements with K-shell x-ray energies between 277 eV (C) and 1487 eV (Al). The x-ray measurements were made with a windowless Si(Li) detector that was calibrated for efficiency by comparing bremsstrahlung spectra from electron bombardment of thin foils of aluminum, silver, and gold with theoretically determined bremsstrahlung spectral distributions. The x-ray-production cross-section measurements are compared to first-order Born and perturbed-stationary-state with energy-loss, Coulomb deflection, and relativistic corrections (ECPSSR) ionization theories using single-hole fluorescence yields. The ECPSSR and first-order Born theoretical predictions are, in general, in close agreement with each other and both generally fit the data quite well. digital.library.unt.edu/ark:/67531/metadc139500/
Rapid isothermal annealing of As-, P-, and B-implanted silicon
This article discusses rapid idothermal annealing of As-, P-, and B-implanted silicon. digital.library.unt.edu/ark:/67531/metadc139472/
Thermal annealing behavior of an oxide layer under silicon
This article discusses the thermal annealing behavior of an oxide layer under silicon. digital.library.unt.edu/ark:/67531/metadc139474/