Description: This article discusses charge-state dependence of M-shell x-ray production in 67Ho by 2-12-MeV carbon ions. Abstract: Charge-state dependence of M-shell x-ray production cross sections of 67Ho bombarded by 2-12-MeV carbon ions, with and without K-shell vacancies, were measured using a windowless Si(Li) x-ray detector with a full-width-at-half-maximum resolution of 135 eV at 5.9 keV. Carbon ions of different charge states were produced using a postacceleration, nitrogen gas stripping cell. The carbon ions were then magnetically analyzed to select the desired charge state and energy before entering the target chamber. The total M-shell and Mζ, Mα,β, and Mγ x-ray cross sections were measured. The electron-capture (EC) contributions as well as the direct-ionization (DI) contributions can be determined by making a comprehensive study of the projectile-charge-state dependence of the target x-ray production cross sections for targets in which the single-collision realm is maintained. In this paper, both EC and DI contributions and the total M-shell x-ray production cross sections are compared to both the first Born theory and to the perturbed-stationary-state theory with energy-loss, Coulomb-deflection, and relativistic corrections.

Description: This article discusses fabrication of silicon-based optical components for an ultraclean accelerator mass spectronomy negative ion source. Abstract: An ultraclean accelerator mass spectronomy negative ion source for semiconductor material mass analysis has been built and is in operation at the University of North Texas' Ion Beam Modification and Analysis Laboratory (IBMAL). The source is unique in that the active surfaces and apertures of the optical components in the ion source have been fabricated from high-purity single crystal silicon. This prevents both the 133Cs+ beam incident on the semiconductor samples and the negative ions from the sample surfaces from "seeing" and sputtering any metal surfaces (mostly stainless steel) in the beamline. The Cs+ beam can be rastered across the sample surface and the impact energy is adjustable to control depth-profiling rates. An ultraclean ion source of this type is necessary to prevent the injection of Fe and other beamline elements onto the sample or into the tandem accelerator, which is equivalent to putting an impurity signal into the mass analysis of the semiconductor sample. Suppression of these elements increases the sensitivity of the analysis to one part in 10¹² for many masses. The fabrication and alignment of the optical components-einzel lenses, ...

Description: This article discusses simultaneous measurement of the average ion-induced electron emission yield and the mean charge for isotachic ions in carbon foils. Knowledge of the incident ion's atomic number (Z₁) dependence of ion-induced electron emission yields can be the basis for a general understanding of ion-atom interaction phenomena and, in particular, for the design of Z₁-sensitive detectors that could be useful, for example, in the separation of isobars in accelerator mass spectrometry. The Z₁ dependence of ion-induced electron emission yields, y, has been investigating using heavy ions C³⁺, O³⁺, F³⁺, Na³⁺, Al³⁺, Si³⁺, P³⁺, S³⁺, Cl³⁺, K³⁺, Ti³⁺, Cr³⁺, Mn⁴⁺, Fe⁴⁺, Co⁴⁺, Ni⁴⁺, Cu⁴⁺, Ga⁴⁺, As⁵⁺, Br⁵⁺, Ru⁷⁺, Ag⁷⁺, Sn⁷⁺, and I⁸⁺ of identical velocity (v = 2v₀, where v₀ is the Bohr velocity) normally incident on 50 μg/cm² sputter-cleaned carbon foils. Measured yields as a function of Z₁ reveal an oscillatory behavior with pronounced maxima and minima. Contrary to previously reported yields that assumed to monotonically increasing empirical mean charge state for the exiting ion, the present work indicates the Z₁ oscillations in the experimentally measured yields, a fact masked in previous work. The strong Z₁ oscillations can only be observed by simultaneous measurement of the yield and the ...