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 Department: Materials Science and Engineering
 Department: Physics
 Collection: UNT Scholarly Works
K-shell x-ray-production cross sections in 6C, 8O, 9F, 11Na, 12Mg, and 13Al, by 0.75- to 4.5-MeV protons

K-shell x-ray-production cross sections in 6C, 8O, 9F, 11Na, 12Mg, and 13Al, by 0.75- to 4.5-MeV protons

Date: November 1, 1991
Creator: Yu, Y. C.; McNeir, M. R.; Weathers, Duncan L.; Duggan, Jerome L.; McDaniel, Floyd Del. (Floyd Delbert), 1942- & Lapicki, Gregory
Description: Article discussing K-shell x-ray-production cross sections in 6C, 8O, 9F, 11Na, 12Mg, and 13AI, by 0.75- to 4.5-MeV protons.
Contributing Partner: UNT College of Arts and Sciences
Rapid isothermal annealing of As-, P-, and B-implanted silicon

Rapid isothermal annealing of As-, P-, and B-implanted silicon

Date: June 15, 1984
Creator: Wilson, Scott R.; Paulson, W. M.; Gregory, R. B.; Hamdi, A. H. & McDaniel, Floyd Del. (Floyd Delbert), 1942-
Description: This article discusses rapid idothermal annealing of As-, P-, and B-implanted silicon.
Contributing Partner: UNT College of Arts and Sciences
Spontaneous coordinated activity in cultured networks: analysis of multiple ignition sites, primary circuits, and burst phase delay distributions

Spontaneous coordinated activity in cultured networks: analysis of multiple ignition sites, primary circuits, and burst phase delay distributions

Date: June 2008
Creator: Ham, Michael I.; Bettencourt, Luis; McDaniel, Floyd Del. (Floyd Delbert), 1942- & Gross, Guenter W.
Description: This article discusses an analysis of multiple ignition sites, primary circuits, and burst phase delay distributions.
Contributing Partner: UNT College of Arts and Sciences
Thermal annealing behavior of an oxide layer under silicon

Thermal annealing behavior of an oxide layer under silicon

Date: December 15, 1982
Creator: Hamdi, A. H.; McDaniel, Floyd Del. (Floyd Delbert), 1942-; Pinizzotto, Russell F.; Matteson, Samuel E.; Lam, H. W. & Malhi, S. D. S.
Description: This article discusses the thermal annealing behavior of an oxide layer under silicon.
Contributing Partner: UNT College of Arts and Sciences