Date: April 19, 2012
Creator: Herro, Alicia & Philipose, Usha
Description: This presentation discusses research on the growth and characterization of aluminum nitride (AIN) nanowires. Due to the nature of aluminum (Al), growth of these wires has proven problematic, and optimizing their different characteristics even more so. The author intends to grow AlN wires at a lower temperature than other researchers have in order to prevent some of the defects from forming. The author will also be growing on sapphire, a substrate better suited to the well arrayed growth of the wires than silicon (Si).
Contributing Partner: UNT Honors College