You limited your search to:

 Collection: UNT Theses and Dissertations
Massed and Distributed Practice in Beginning Gymnastics for College Women

Massed and Distributed Practice in Beginning Gymnastics for College Women

Date: August 1968
Creator: Dixon, Carolyn
Description: The study was undertaken to determine the effects of massed and distributed practice on the performance of beginning gymnastics skills, to secure data on these effects, and to evaluate these effects in acquiring the necessary components of motor fitness for basic gymnastics skills.
Contributing Partner: UNT Libraries
Massed Group Desensitization in the Reduction of Anxiety

Massed Group Desensitization in the Reduction of Anxiety

Date: August 1972
Creator: Dawley, Harold H., 1940-
Description: The problem with which this investigation was concerned was that of determining the effectiveness of massed group desensitization in the reduction of anxiety. Thirty test-anxious nursing students who scored in the upper quartile on the Test Anxiety Questionnaire (TAQ) served as the subjects. The subjects were assigned by the use of a randomized block procedure to one of the following three groups matched on the basis of their pre-test TAQ scores: (1) desensitization, (2) placebo, and (3) control.
Contributing Partner: UNT Libraries
Masters No More: Abolition and Texas Planters, 1860-1890

Masters No More: Abolition and Texas Planters, 1860-1890

Date: December 2010
Creator: Ivan, Adrien D.
Description: This dissertation is a study of the effects of the abolition of slavery on the economic and political elite of six Texas counties between 1860 and 1890. It focuses on Austin, Brazoria, Colorado, Fort Bend, Matagorda, and Wharton Counties. These areas contain the overwhelming majority of Stephen F. Austin's "Old Three Hundred," the original American settlers of Texas. In addition to being the oldest settled region, these counties contained many of the wealthiest slaveholders within the state. This section of the state, along with the northeast along the Louisiana border, includes the highest concentration of Texas' antebellum plantations. This study asks two central questions. First, what were the effects of abolition on the fortunes of the planter class within these six counties? Did a new elite emerge as a result of the end of slavery, or, despite the liquidation of a substantial portion of their estates, did members of the former planter class sustain their economic dominance over the counties? Second, what were abolition's effects on the counties' prewar political elite, defined as the county judge? Who were in power before the war and who were in power after it? Did abolition contribute to a new kind of politician?
Contributing Partner: UNT Libraries
Masturbation and Relationship Satisfaction

Masturbation and Relationship Satisfaction

Date: May 2013
Creator: Ramos, Marciana Julia
Description: Relationship satisfaction often declines after marriage or cohabitation and between 40-50% of marriages end in divorce. Furthermore, many couples who stay together report feeling unsatisfied in their relationships. Thus, it is important to examine factors that contribute to enduring and satisfying relationships. One factor that has been closely linked to relationship satisfaction is the sexual relationship of the couple. One aspect of the sexual relationship that has received little attention is masturbation. Although most psychologists hold positive views about masturbation, and recommend masturbation in many instances, the empirical data examining the association between masturbation and relationship satisfaction has mixed findings, with the majority of studies reporting a small negative relationship between these variables. The purpose of the present study was to further explore the association between masturbation and relationship satisfaction, focusing on possible moderators and mediators of this relationship including: masturbation guilt, openness with an individual's partner about masturbation, gender, object of arousal during masturbation, and reason for masturbating. Overall, masturbation frequency did not have a significant association with relationship satisfaction. However, the object of arousal during masturbation and openness about masturbation moderated the association between masturbation frequency and relationship satisfaction. Specifically, individuals who (a) used objects of arousal other ...
Contributing Partner: UNT Libraries
Matador

Matador

Date: May 1998
Creator: Patino, Julio
Description: Matador is an opera scored for orchestra, mixed chorus and soloists (mezzosoprano, 3 tenors, 2 baritones). The work is in one act divided into two main sections. Each of these sections is divided into subsections. The libretto is aphoristic in nature and dictates the form of each of these subsections. The division into two parts also serves as a means to evoke a sense of hopelessness of emotions in the first and a transforming disposition that culminates in a jubilant song in the second.
Contributing Partner: UNT Libraries
Material for Conversation in Spanish at the High School Level

Material for Conversation in Spanish at the High School Level

Date: 1944
Creator: Lee, Louise Cleveland
Description: This thesis consists of material for conversation in Spanish at the high school level.
Contributing Partner: UNT Libraries
Materials Acquisition Cycles for Manufacturing Firms

Materials Acquisition Cycles for Manufacturing Firms

Date: May 1969
Creator: Thompson, George H. (George Hutchinson)
Description: The general purpose of this investigation was to identify general models of materials acquisition cycles for manufacturing firms as found in representative industries. The study further undertook to identify types of industrial situations in which the acquisition cycles display unique characteristics.
Contributing Partner: UNT Libraries
A Materials Approach to Silicon Wafer Level Contamination Issues from the Wet Clean Process

A Materials Approach to Silicon Wafer Level Contamination Issues from the Wet Clean Process

Date: December 1996
Creator: Hall, Lindsey H. (Lindsey Harrison)
Description: Semiconductor devices are built using hyperpure silicon and very controlled levels of doping to create desired electrical properties. Contamination can alter these precisely controlled electrical properties that can render the device non-functional or unreliable. It is desirable to determine what impurities impact the device and control them. This study consists of four parts: a) determination of acceptable SCI (Standard Clean 1) bath contamination levels using VPD-DSE-GFAAS (Vapor Phase Decomposition Droplet Surface Etching Graphite Furnace Atomic Absorption Spectroscopy), b) copper deposition from various aqueous HF solutions, c) anion contamination from fluoropolymers used in chemical handling and d) metallic contamination from fluoropolymers and polyethylene used in chemical handling. A technique was developed for the determination of metals on a silicon wafer source at low levels. These levels were then correlated to contamination levels in a SCI bath. This correlation permits the determination of maximum permissible solution contaminant levels. Copper contamination is a concern for depositing on the wafer surface from hydrofluoric acid solutions. The relationship between copper concentration on the wafer surface and hydrofluoric acid concentration was determined. An inverse relationship exists and was explained by differences in diffusion rates between the differing copper species existing in aqueous hydrofluoric acid solutions. Finally, ...
Contributing Partner: UNT Libraries
Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.

Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies.

Date: August 2002
Creator: Quevedo-Lopez, Manuel Angel
Description: Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixOy are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford backscattering spectroscopy (RBS), heavy ion RBS (HI-RBS), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HR-TEM), and time of flight and dynamic secondary ion mass spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling ...
Contributing Partner: UNT Libraries
Materials properties of ruthenium and ruthenium oxides thin films for advanced electronic applications.

Materials properties of ruthenium and ruthenium oxides thin films for advanced electronic applications.

Access: Use of this item is restricted to the UNT Community.
Date: May 2006
Creator: Lim, ChangDuk
Description: Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as thick film resistors, buffer layers for yttrium barium copper oxide (YBCO) superconducting thin films, and as electrodes in ferroelectric memories. Other potential applications in Si based complementary metal oxide semiconductor (CMOS) devices are currently being studied. The search for alternative metal-based gate electrodes as a replacement of poly-Si gates has intensified during the last few years. Metal gates are required to maintain scaling and performance of future CMOS devices. Ru based materials have many desirable properties and are good gate electrode candidates for future metal-oxide-semiconductor (MOS) device applications. Moreover, Ru and RuO2 are promising candidates as diffusion barriers for copper interconnects. In this thesis, the thermal stability and interfacial diffusion and reaction of both Ru and RuO2 thin films on HfO2 gate dielectrics were investigated using Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). An overview of Ru and RuO2/HfO2 interface integrity issues will be presented. In addition, the effects of C ion modification of RuO2 thin films on the physico-chemical and electrical properties are evaluated.
Contributing Partner: UNT Libraries