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 Department: Department of Physics
 Collection: UNT Theses and Dissertations
Studies of Charged Particle Dynamics for Antihydrogen Synthesis

Studies of Charged Particle Dynamics for Antihydrogen Synthesis

Date: December 2014
Creator: Correa, Jose Ricardo
Description: Synthesis and capture of antihydrogen in controlled laboratory conditions will enable precise studies of neutral antimatter. The work presented deals with some of the physics pertinent to manipulating charged antiparticles in order to create neutral antimatter, and may be applicable to other scenarios of plasma confinement and charged particle interaction. The topics covered include the electrostatic confinement of a reflecting ion beam and the transverse confinement of an ion beam in a purely electrostatic configuration; the charge sign effect on the Coulomb logarithm for a two component (e.g., antihydrogen) plasma in a Penning trap as well as the collisional scattering for binary Coulomb interactions that are cut off at a distance different than the Debye length; and the formation of magnetobound positronium and protonium.
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Analysis of Biological Materials Using a Nuclear Microprobe

Analysis of Biological Materials Using a Nuclear Microprobe

Date: December 2014
Creator: Mulware, Stephen Juma
Description: The use of nuclear microprobe techniques including: Particle induced x-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS) for elemental analysis and quantitative elemental imaging of biological samples is especially useful in biological and biomedical research because of its high sensitivity for physiologically important trace elements or toxic heavy metals. The nuclear microprobe of the Ion Beam Modification and Analysis Laboratory (IBMAL) has been used to study the enhancement in metal uptake of two different plants. The roots of corn (Zea mays) have been analyzed to study the enhancement of iron uptake by adding Fe (II) or Fe (III) of different concentrations to the germinating medium of the seeds. The Fe uptake enhancement effect produced by lacing the germinating medium with carbon nanotubes has also been investigated. The aim of this investigation is to ensure not only high crop yield but also Fe-rich food products especially from calcareous soil which covers 30% of world’s agricultural land. The result will help reduce iron deficiency anemia, which has been identified as the leading nutritional disorder especially in developing countries by the World Health Organization. For the second plant, Mexican marigold (Tagetes erecta), the effect of an arbuscular mycorrhizal fungi (Glomus intraradices) for the ...
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Electrical Conduction Mechanisms in the Disordered Material System P-type Hydrogenated Amorphous Silicon

Electrical Conduction Mechanisms in the Disordered Material System P-type Hydrogenated Amorphous Silicon

Date: December 2014
Creator: Shrestha, Kiran
Description: The electrical and optical properties of boron doped hydrogenated amorphous silicon thin films (a-Si) were investigated to determine the effect of boron and hydrogen incorporation on carrier transport. The a-Si thin films were grown by plasma enhanced chemical vapor deposition (PECVD) at various boron concentrations, hydrogen dilutions, and at differing growth temperatures. The temperature dependent conductivity generally follows the hopping conduction model. Above a critical temperature, the dominant conduction mechanism is Mott variable range hopping conductivity (M-VRH), where p = ¼, and the carrier hopping depends on energy. However, at lower temperatures, the coulomb interaction between charge carriers becomes important and Efros-Shklosvkii variable hopping (ES-VRH) conduction, where p=1/2, must be included to describe the total conductivity. To correlate changes in electrical conductivity to changes in the local crystalline order, the transverse optical (TO) and transverse acoustic (TA) modes of the Raman spectra were studied to relate changes in short- and mid-range order to the effects of growth temperature, boron, and hydrogen incorporation. With an increase of hydrogen and/or growth temperature, both short and mid-range order improve, whereas the addition of boron results in the degradation of short range order. It is seen that there is a direct correlation between the ...
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Sputtering of Bi and Preferential Sputtering of an Inhomogeneous Alloy

Sputtering of Bi and Preferential Sputtering of an Inhomogeneous Alloy

Date: December 2014
Creator: Deoli, Naresh T.
Description: Angular distributions and total yields of atoms sputtered from bismuth targets by normally incident 10 keV -50 keV Ne+ and Ar+ ions have been measured both experimentally and by computer simulation. Polycrystalline Bi targets were used for experimental measurements. The sputtered atoms were collected on high purity aluminum foils under ultra-high vacuum conditions, and were subsequently analyzed using Rutherford backscattering spectroscopy. The Monte-Carlo based SRIM code was employed to simulate angular distributions of sputtered Bi atoms and total sputtering yields of Bi to compare with experiment. The measured sputtering yields were found to increase with increasing projectile energy for normally incident 10 keV - 50 keV Ne+ and Ar+ ions. The shapes of the angular distributions of sputtered Bi atoms demonstrated good agreement between experiment and simulation in the present study. The measured and simulated angular distributions of sputtered Bi exhibited an over-cosine tendency. The measured value of the degree of this over-cosine nature was observed to increase with increasing incident Ne+ ion energy, but was not strongly dependent on incident Ar+ ion energy. The differential angular sputtering yield and partial sputtering yields due to Ar ion bombardment of an inhomogeneous liquid Bi:Ga alloy have been investigated, both experimentally and ...
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Temporal Complexity and Stochastic Central Limit Theorem

Temporal Complexity and Stochastic Central Limit Theorem

Date: August 2014
Creator: Pramukkul, Pensri
Description: Complex processes whose evolution in time rests on the occurrence of a large and random number of intermittent events are the systems under study. The mean time distance between two consecutive events is infinite, thereby violating the ergodic condition and activating at the same time a stochastic central limit theorem that explains why the Mittag-Leffler function is a universal property of nature. The time evolution of these complex systems is properly generated by means of fractional differential equations, thus leading to the interpretation of fractional trajectories as the average over many random trajectories, each of which fits the stochastic central limit theorem and the condition for the Mittag-Leffler universality. Additionally, the effect of noise on the generation of the Mittag-Leffler function is discussed. Fluctuations of relatively weak intensity can conceal the asymptotic inverse power law behavior of the Mittag-Leffler function, providing a reason why stretched exponentials are frequently found in nature. These results afford a more unified picture of complexity resting on the Mittag-Leffler function and encompassing the standard inverse power law definition.
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Enhancement of Mechanical, Thermal Stability, and Tribological Properties by Addition of Functionalized Reduced Graphene Oxide in Epoxy

Enhancement of Mechanical, Thermal Stability, and Tribological Properties by Addition of Functionalized Reduced Graphene Oxide in Epoxy

Date: August 2014
Creator: Shah, Rakesh K.
Description: The effects of octadecylamine-functionalized reduced graphene oxide (FRGO) on the frictional and wear properties of diglycidylether of bisphenol-A (DGEBA) epoxy are studied using a pin-on-disk tribometer. It was observed that the addition of FRGO significantly improves the tribological, mechanical, and thermal properties of epoxy matrix. Graphene oxide (GO) was functionalized with octadecylamine (ODA), and then reduction of oxygen-containing functional groups was carried out using hydrazine monohydrate. The Raman and x-ray photoelectron spectroscopy studies confirm significant reduction in oxygen-containing functional groups and formation of ODA functionalized reduced GO. The nanocomposites are prepared by adding 0.1, 0.2, 0.5 and 1.0 wt % of FRGO to the epoxy. The addition of FRGO increases by more than an order of magnitude the sliding distance during which the dynamic friction is ≤ 0.1. After this distance, the friction sharply increases to the range of 0.4 - 0.5. We explain the increase in sliding distance during which the friction is low by formation of a transfer film from the nanocomposite to the counterface. The wear rates in the low and high friction regimes are approximately 1.5 x 10-4 mm3/N·m and 5.5 x 10-4 mm3/N·m, respectively. The nanocomposites exhibit a 74 % increase in Young’s modulus with ...
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Synthesis Strategies and a Study of Properties of Narrow and Wide Band Gap Nanowires

Synthesis Strategies and a Study of Properties of Narrow and Wide Band Gap Nanowires

Date: May 2014
Creator: Sapkota, Gopal
Description: Various techniques to synthesize nanowires and nanotubes as a function of growth temperature and time were investigated. These include growth of nanowires by a chemical vapor deposition (CVD) system using vapor-liquid-solid (VLS) growth mechanism and electro-chemical synthesis of nanowires and nanotubes. Narrow band gap InSb Eg = 0.17 eV at room temp) nanowires were successively synthesized. Using a phase diagram, the transition of the nanowire from metallic- semiconducting- semi-metallic phase was investigated. A thermodynamic model is developed to show that the occurrence of native defects in InSb nanowires influenced by the nanowire growth kinetics and thermodynamics of defect formation. Wide band gap ZnO (Eg = 3.34 eV) and In2O3 (3.7 eV) were also synthesized. ZnO nanowires and nanotubes were successfully doped with a transition metal Fe, making it a Dilute Magnetic Semiconductor of great technological relevance. Structural and electronic characterizations of nanowires were studied for different semiconducting, metallic and semi-metallic nanowires. Electron transport measurements were used to estimate intrinsic material parameters like carrier concentration and mobility. An efficient gas sensing device using a single In2O3 nanowire was studied and which showed sensitivity to reducing gas like NH3 and oxidizing gas like O2 gas at room temperature. The efficiency of the ...
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Synthesis, Characterization, Structural, and Optical Properties of Zinc Oxide Nanostructures Embedded in Silicon Based Substrates

Synthesis, Characterization, Structural, and Optical Properties of Zinc Oxide Nanostructures Embedded in Silicon Based Substrates

Date: May 2014
Creator: Pandey, Bimal
Description: Structural and optical properties of ZnO nanostructures synthesized by low energy ion implantation technique were examined. ZnO molecular ions were implanted into Si/SiO2 substrates at room temperature and then furnace annealed under different temperatures and environments. In all as-implanted samples only Zn nanostructures with varying diameters distributed into the Si/SiO2 matrices were observed. No trace of ZnO was found. The distributions of Zn nanostructures in Si/SiO2 closely matched results from Stopping and Range of Ions in Matter (SRIM) simulations. During annealing at 750 oC, Zn diffused both toward and away from the surface of the substrate and combine with oxygen to form ZnO nanostructures. At higher annealing temperatures ZnO bonding started to break down and transfer to zinc silicate (Zn2SiO4), and at 900 oC the ZnO was completely converted into Zn2SiO4. The average sizes of Zn/ZnO nanostructures depended on the ion fluence. If the fluence increased the average sizes of nanostructures also increased and vice versa. For room temperature photoluminescence (RT-PL), band-edge emission in the ultraviolet (UV) region was observed from all samples annealed at 700 oC/750 oC and were slightly blue shifted as compare to bulk ZnO. Donor-bound exciton (D,X) and acceptor-bound exciton (A,X) transitions were observed in low ...
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The Effects of Residual Gases on the Field Emission Properties of Zno, Gan, Zns Nanostructures, and the Effects of Light on the Resistivity of Graphene

The Effects of Residual Gases on the Field Emission Properties of Zno, Gan, Zns Nanostructures, and the Effects of Light on the Resistivity of Graphene

Date: May 2014
Creator: Mo, Yudong
Description: In this dissertation, I present that at a vacuum of 3×10-7 Torr, residual O2, CO2, H2 and Ar exposure do not significantly degrade the field emission (FE) properties of ZnO nanorods, but N2 exposure significantly does. I propose that this could be due to the dissociation of N2 into atomic nitrogen species and the reaction of such species with ZnO. I also present the effects of O2, CO2, H2O, N2, H2, and Ar residual gas exposure on the FE properties of GaN and ZnS nanostructure. A brief review of growth of ZnO, GaN and ZnS is provided. In addition, Cs deposition on GaN nanostructures at ultra-high vacuum results in 30% decrease in turn-on voltage and 60% in work function. The improvement in FE properties could be due to a Cs-induced space-charge layer at the surface that reduces the barrier for FE and lowers the work function. I describe a new phenomenon, in which the resistivity of CVD-grown graphene increases to a higher saturated value under light exposure, and depends on the wavelength of the light—the shorter the wavelength, the higher the resistivity. First-principle calculations and theoretical analysis based on density functional theory show that (1) a water molecule close to ...
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Effects of Quantum Coherence and Interference

Effects of Quantum Coherence and Interference

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Date: August 2013
Creator: Davuluri, Subrahmanya Bhima Sankar
Description: Quantum coherence and interference (QCI) is a phenomenon that takes place in all multi-level atomic systems interacting with multiple lasers. In this work QCI is used to create several interesting effects like lasing without inversion (LWI), controlling group velocity of light to extreme values, controlling the direction of propagation through non-linear phase matching condition and for controlling the correlations in field fluctuations. Controlling group velocity of light is very interesting because of many novel applications it can offer. One of the unsolved problems in this area is to achieve a slow and fast light which can be tuned continuously as a function of frequency. We describe a method for creation of tunable slow and fast light by controlling intensity of incident laser fields using QCI effects. Lasers are not new to the modern world but an extreme ultra-violet laser or a x-ray laser is definitely one of the most desirable technologies today. Using QCI, we describe a method to realize lasing at high frequencies by creating lasing without inversion. Role of QCI in creating correlations and anti-correlations, which are generated by vacuum fluctuations, in a three level lambda system coupled to two strong fields is discussed.
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