Atomic Layer Deposition of Boron Oxide and Boron Nitride for Ultrashallow Doping and Capping Applications
Description:
The deposition of boron oxide (B₂O₃) films on silicon substrates is of significant interest in microelectronics for ultrashallow doping applications. However, thickness control and conformality of such films has been an issue in high aspect ratio 3D structures which have long replaced traditional planar transistor architectures. B₂O₃ films are also unstable in atmosphere, requiring a suitable capping barrier for passivation. The growth of continuous, stoichiometric B₂O₃ and boron nitride (BN) f…
more
Date:
December 2020
Creator:
Pilli, Aparna
Partner:
UNT Libraries