You limited your search to:

  Partner: UNT Libraries
 Degree Discipline: Physics
 Collection: UNT Theses and Dissertations
Homogeneous Canonical Formalism and Relativistic Wave Equations

Homogeneous Canonical Formalism and Relativistic Wave Equations

Date: January 1967
Creator: Jackson, Albert A.
Description: This thesis presents a development of classical canonical formalism and the usual transition schema to quantum dynamics. The question of transition from relativistic mechanics to relativistic quantum dynamics is answered by developing a homogeneous formalism which is relativistically invariant. Using this formalism the Klein-Gordon equation is derived as the relativistic analog of the Schroedinger equation. Using this formalism further, a method of generating other relativistic equations (with spin) is presented.
Contributing Partner: UNT Libraries
The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms

The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms

Date: August 2011
Creator: Behera, Swayambhu Prasad
Description: Nanoporous low-k dielectrics are used for integrated circuit interconnects to reduce the propagation delays, and cross talk noise between metal wires as an alternative material for SiO2. These materials, typically organosilicate glass (OSG) films, are exposed to oxygen plasmas during photoresist stripping and related processes which substantially damage the film by abstracting carbon, incorporating O and OH, eventually leading to significantly increased k values. Systematic studies have been performed to understand the oxygen plasma-induced damage mechanisms on different low-k OSG films of various porosity and pore interconnectedness. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy are used to understand the damage kinetics of O radicals, ultraviolet photons and charged species, and possible ways to control the carbon loss from the film. FTIR results demonstrate that O radical present in the plasma is primarily responsible for carbon abstraction and this is governed by diffusion mechanism involving interconnected film nanopores. The loss of carbon from the film can be controlled by closing the pore interconnections, He plasma pretreatment is an effective way to control the damage at longer exposure by closing the connections between the pores.
Contributing Partner: UNT Libraries
An Investigation for Gamma Rays Resulting from the Bombardment of As75 with 14 Mev Neutrons

An Investigation for Gamma Rays Resulting from the Bombardment of As75 with 14 Mev Neutrons

Date: 1957
Creator: Givens, Wyatt Wendell
Description: It is the purpose of this paper to set forth the method and results of studying the gamma rays resulting from the bombardment of As75 with approximately 14 Mev neutrons. The source of these neutrons was the H3(d,n)He4 reaction. The deuterons of 325 Kev energy were obtained from a Van de Graff electrostatic accelerator. A NaI scintillation spectrometer was used to determine the gamma-ray energies.
Contributing Partner: UNT Libraries
Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Date: May 2006
Creator: Mitchell, Lee
Description: Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active ...
Contributing Partner: UNT Libraries
Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Date: May 2011
Creator: Poudel, Prakash Raj
Description: The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process ...
Contributing Partner: UNT Libraries
Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions

Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions

Date: May 2006
Creator: Roth, Elaine Grannan
Description: A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over its complimentary defect (i.e., a vacancy). Mechanisms for producing such excesses by implantation will be discussed. The basis of this model specifies that accumulation of stable lattice damage during implantation depends upon the excess defects and not the total number of defects. The excess defect model is validated by fundamental damage studies involving ion implantation over a range of conditions. Confirmation of the model is provided by comparing damage profiles after implantation with computer simulation results. It will be shown that transport of ions in matter (TRIM) can be used effectively to model the ion-induced damage profile, i.e. excess defect distributions, by a simple subtraction process in which the spatially correlated defects are removed, thereby simulating recombination. Classic defect studies ...
Contributing Partner: UNT Libraries
Magnetic Resonance of Protons in the Earth's Magnetic Field

Magnetic Resonance of Protons in the Earth's Magnetic Field

Date: August 1959
Creator: Crosby, Richard Hill
Description: The purpose of the work reported here was to determine the feasibility of applying the nuclear induction technique of Bloch to the direct observation of nuclear magnetic resonance in the very weak magnetic field of the earth.
Contributing Partner: UNT Libraries
Magnetic Susceptibility of a Crystalline Free Radical

Magnetic Susceptibility of a Crystalline Free Radical

Date: June 1962
Creator: Smith, William C.
Description: The entirety of the investigation discussed in this paper was confined to a study of the spin resonance properties of unpaired electrons of an organic free radical. In the remainder of the paper the theory of electron spin resonance, the apparatus used in the investigation, and the experimental results obtained are discussed in that order.
Contributing Partner: UNT Libraries
Magnetically Driven Instabilities in Gas Discharges

Magnetically Driven Instabilities in Gas Discharges

Date: August 1963
Creator: Choate, Jimmie W.
Description: In the present experiment a gas discharge plasma generator was designed and constructed and a search was made for evidence of a plasma instability due to the influence of an externally applied magnetic field. The evidence for such an unstable mode of operation is too indirect to make a possible conclusion, but an approach to more certain identification will be indicated.
Contributing Partner: UNT Libraries
Magnetomorphic Oscillations in Cadmium Cylinders

Magnetomorphic Oscillations in Cadmium Cylinders

Date: August 1969
Creator: Hight, Ralph D.
Description: The work presented here is an experimental investigation of the effect of cylindrical geometry on electrical conductivity, in which single-crystal samples of cadmium at the temperature of liquid helium are used, with the diameter on the order of the electron mean free path.
Contributing Partner: UNT Libraries