You limited your search to:

  Partner: UNT Libraries
 Degree Discipline: Physics
 Collection: UNT Theses and Dissertations
Work Function Study of Iridium Oxide and Molybdenum Using UPS and Simultaneous Fowler-Nordheim I-V Plots with Field Emission Energy Distributions

Work Function Study of Iridium Oxide and Molybdenum Using UPS and Simultaneous Fowler-Nordheim I-V Plots with Field Emission Energy Distributions

Date: August 1999
Creator: Bernhard, John Michael
Description: The characterization of work functions and field emission stability for molybdenum and iridium oxide coatings was examined. Single emission tips and flat samples of molybdenum and iridium oxide were prepared for characterization. The flat samples were characterized using X-ray Photoelectron Spectroscopy and X-ray diffraction to determine elemental composition, chemical shift, and crystal structure. Flat coatings of iridium oxide were also scanned by Atomic Force Microscopy to examine topography. Work functions were characterized by Ultraviolet Photoelectron Spectroscopy from the flat samples and by Field Emission Electron Distributions from the field emission tips. Field emission characterization was conducted in a custom build analytical chamber capable of measuring Field Emission Electron Distribution and Fowler-Nordheim I-V plots simultaneously to independently evaluate geometric and work function changes. Scanning Electron Microscope pictures were taken of the emission tips before and after field emission characterization to confirm geometric changes. Measurement of emission stability and work functions were the emphasis of this research. In addition, use of iridium oxide coatings to enhance emission stability was evaluated. Molybdenum and iridium oxide, IrO2, were characterized and found to have a work function of 4.6 eV and 4.2 eV by both characterization techniques, with the molybdenum value in agreement with previous ...
Contributing Partner: UNT Libraries
Photoelectric Emission Measurements for CVD Grown Polycrystalline Diamond Films

Photoelectric Emission Measurements for CVD Grown Polycrystalline Diamond Films

Date: August 1999
Creator: Hassan, Tarek
Description: We examined CVD grown polycrystalline diamond films having different methane concentrations to detect defects and study the possible correlation between the methane concentration used during the growth process and the defect density. SEM and Raman results show that the amorphous and sp2 carbon content of the films increases with methane concentration. Furthermore, photoelectric emission from diamond is confirmed to be a two-photon process, hence the electrons are emitted from normally unoccupied states. We found that the photoelectric yield, for our samples, decreases with the increase in methane concentration. This trend can be accounted for in two different ways: either the types of defects observed in this experiment decrease in density as the methane concentration increases; or, the defect density stays the same or increases, but the increase in methane concentration leads to an increase in the electron affinity, which reduces the overall photoelectric yield.
Contributing Partner: UNT Libraries
Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors

Picosecond Dynamics of Free-Carrier Populations, Space-Charge Fields, and Photorefractive Nonlinearities in Zincblende Semiconductors

Date: August 1999
Creator: Stark, Thomas S.
Description: Generally, nonlinear optics studies investigate optically-induced changes in refraction or absorption, and their application to spectroscopy or device fabrication. The photorefractive effect is a nonlinear optical effect that occurs in solids, where transport of an optically-induced free-carrier population results in an internal space-charge field, which produces an index change via the linear electrooptic effect. The photorefractive effect has been widely studied for a variety of materials and device applications, mainly because it allows large index changes to be generated with laser beams having only a few milliwatts of average power.Compound semiconductors are important photorefractive materials because they offer a near-infrared optical response, and because their carrier transport properties allow the index change to be generated quickly and efficiently. While many researchers have attempted to measure the fundamental temporal dynamics of the photorefractive effect in semiconductors using continuous-wave, nanosecond- and picosecond-pulsed laser beams, these investigations have been unsuccessful. However, studies with this goal are of clear relevance because they provide information about the fundamental physical processes that produce this effect, as well as the material's speed and efficiency limitations for device applications.In this dissertation, for the first time, we time-resolve the temporal dynamics of the photorefractive nonlinearities in two zincblende semiconductors, ...
Contributing Partner: UNT Libraries
Microstructure and Electronic Structures of Er-Doped Si Nano-particles Synthesized by Vapor Phase Pyrolysis

Microstructure and Electronic Structures of Er-Doped Si Nano-particles Synthesized by Vapor Phase Pyrolysis

Access: Use of this item is restricted to the UNT Community.
Date: May 2000
Creator: Chen, Yandong
Description: Si nanoparticles are new prospective optoelectronic materials. Unlike bulk Si cry-stals, Si nanoparticles display intriguing room-temperature photoluminescence. A major challenge in the fabrication of Si nanoparticles is the control of their size distribution. The rare-earth element Er has unique photo emission properties, including low pumping power, and a temperature independent, sharp spectrum. The emission wavelength matches the transmission window of optical fibers used in the telecommunications industry. Therefore, the study of Er-doped Si nanoparticles may have practical significance. The goals of the research described in this dissertation are to investigate vapor phase pyrolysis methods and to characterize the microstructure and associated defects, particles size distributions and photoluminescence efficiencies of doped and undoped Si nanoparticles using analytical transmission electron microscopy, high resolution electron microscopy, and optical spectroscopy. Er-doped and undoped Si nanoparticles were synthesized via vapor-phase pyrolysis of disilane at Texas Christian University. To achieve monodisperse size distributions, a process with fast nucleation and slow growth was employed. Disilane was diluted to 0.48% with helium. A horizontal pyrolysis oven was maintained at a temperature of 1000 °C. The oven length was varied from 1.5 cm to 6.0 cm to investigate the influence of oven length on the properties of the nanoparticles. ...
Contributing Partner: UNT Libraries
Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Date: May 2000
Creator: Guo, Baonian
Description: Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the presence of ionizing radiation in the IC environment. As the charge signals defining data states are reduced by voltage and area scaling, the semiconductor device will naturally have a higher susceptibility to ionizing radiation induced effects. The ionizing radiation can lead to the undesired generation and migration of charge within an IC. This can alter, for example, the memory state of a bit, and thereby produce what is called a "soft" error, or Single Event Upset (SEU). Therefore, the response of ICs to natural radiation is of great concern for the reliability of future devices. Immunity to soft errors is listed as a requirement in the 1997 National Technology Roadmap for Semiconductors prepared by the Semiconductor Industry Association in the United States. To design more robust devices, it is essential to create and test accurate models of induced charge collection and transport in semiconductor devices. A heavy ion microbeam produced by an accelerator is an ideal tool to study charge collection processes in ICs and to locate the weak nodes and structures for improvement through hardening design. In this dissertation, the Ion Beam Induced Charge Collection ...
Contributing Partner: UNT Libraries
Growing carbon nanotubes by chemical vapor deposition technique.

Growing carbon nanotubes by chemical vapor deposition technique.

Access: Use of this item is restricted to the UNT Community.
Date: May 2000
Creator: Rajan, Harihar V.
Description: Carbon nanotubes were synthesized in the laboratory using chemical vapor deposition at different methane concentration. I found that a methane concentration of 4 sccm was ideal for well recognizable carbon nanotubes. A higher concentration led to fewer nanotube growth and silicon carbide structure. Coating the sample first with Fe(NO3)3 created a catalyst base on the substrate for the nanotube to adhere and grow on.
Contributing Partner: UNT Libraries
Scanning Tunneling Microscopy of Homo-epitaxial Chemical Vapor Deposited Diamond (100) Films

Scanning Tunneling Microscopy of Homo-epitaxial Chemical Vapor Deposited Diamond (100) Films

Access: Use of this item is restricted to the UNT Community.
Date: May 2000
Creator: Stallcup, Richard E.
Description: Atomic resolution images of hot-tungsten filament chemical-vapor-deposition (CVD) grown epitaxial diamond (100) films obtained in ultrahigh vacuum (UHV) with a scanning tunneling microscope (STM) are reported. A (2x1) dimer surface reconstruction and amorphous atomic regions were observed on the hydrogen terminated (100) surface. The (2x1) unit cell was measured to be 0.51"0.01 x 0.25"0.01 nm2. The amorphous regions were identified as amorphous carbon. After CVD growth, the surface of the epitaxial films was amorphous at the atomic scale. After 2 minutes of exposure to atomic hydrogen at 30 Torr and the sample temperature at 500° C, the surface was observed to consist of amorphous regions and (2x1) dimer reconstructed regions. After 5 minutes of exposure to atomic hydrogen, the surface was observed to consist mostly of (2x1) dimer reconstructed regions. These observations support a recent model for CVD diamond growth that is based on an amorphous carbon layer that is etched or converted to diamond by atomic hydrogen. With further exposure to atomic hydrogen at 500° C, etch pits were observed in the shape of inverted pyramids with {111} oriented sides. The temperature dependence of atomic hydrogen etching of the diamond (100) surface was also investigated using UHV STM, and ...
Contributing Partner: UNT Libraries
Energy Distribution of Sputtered Neutral Atoms from a Multilayer Target

Energy Distribution of Sputtered Neutral Atoms from a Multilayer Target

Date: August 2000
Creator: Bigelow, Alan W.
Description: Energy distribution measurements of sputtered neutral particles contribute to the general knowledge of sputtering, a common technique for surface analysis. In this work emphasis was placed on the measurement of energy distribution of sputtered neutral atoms from different depths. The liquid Ga-In eutectic alloy as a sample target for this study was ideal due to an extreme concentration ratio gradient between the top two monolayers. In pursuing this study, the method of sputter-initiated resonance ionization spectroscopy (SIRIS) was utilized. SIRIS employs a pulsed ion beam to initiate sputtering and tunable dye lasers for resonance ionization. Observation of the energy distribution was achieved with a position-sensitive detector. The principle behind the detector's energy resolution is time of flight (TOF) spectroscopy. For this specific detector, programmed time intervals between the sputtering pulse at the target and the ionizing laser pulse provided information leading to the energy distribution of the secondary neutral particles. This experiment contributes data for energy distributions of sputtered neutral particles to the experimental database, required by theoretical models and computer simulations for the sputtering phenomenon.
Contributing Partner: UNT Libraries
Nested Well Plasma Traps

Nested Well Plasma Traps

Date: August 2000
Creator: Dolliver, Darrell
Description: Criteria for the confinement of plasmas consisting of a positive and negative component in Penning type traps with nested electric potential wells are presented. Computational techniques for the self-consistent calculation of potential and plasma density distributions are developed. Analyses are presented of the use of nested well Penning traps for several applications. The analyses include: calculations of timescales relevant to the applications, e.g. reaction, confinement and relaxation timescales, self-consistent computations, and consideration of other physical phenomenon important to the applications. Possible applications of a nested well penning trap include production of high charge state ions, studies of high charge state ions, and production of antihydrogen. In addition the properties of a modified Penning trap consisting of an electric potential well applied along a radial magnetic field are explored.
Contributing Partner: UNT Libraries
Space-Charge Saturation and Current Limits in Cylindrical Drift Tubes and Planar Sheaths

Space-Charge Saturation and Current Limits in Cylindrical Drift Tubes and Planar Sheaths

Date: August 2000
Creator: Stephens, Kenneth Frank
Description: Space-charge effects play a dominant role in many areas of physics. In high-power microwave devices using high-current, relativistic electron beams, it places a limit on the amount of radiation a device can produce. Because the beam's space-charge can actually reflect a portion of the beam, the ability to accurately predict the amount of current a device can carry is needed. This current value is known as the space-charge limited current. Because of the mathematical difficulties, this limit is typically estimated from a one-dimensional theory. This work presents a two-dimensional theory for calculating an upper-bound for the space-charge limited current of relativistic electron beams propagating in grounded coaxial drift tubes. Applicable to annular beams of arbitrary radius and thickness, the theory includes the effect introduced by a finite-length drift tube of circular cross-section. Using Green's second identity, the need to solve Poisson's equation is transferred to solving a Sturm-Liouville eigenvalue problem, which is easily solved by elementary methods. In general, the resulting eigenvalue, which is required to estimate the limiting current, must be numerically determined. However, analytic expressions can be found for frequently encountered limiting cases. Space-charge effects also produce the fundamental collective behavior found in plasmas, especially in plasma sheaths. ...
Contributing Partner: UNT Libraries
FIRST PREV 1 2 3 4 5 NEXT LAST