You limited your search to:

  Partner: UNT Libraries
 Decade: 2000-2009
 Degree Discipline: Physics
 Collection: UNT Theses and Dissertations
Microstructure and Electronic Structures of Er-Doped Si Nano-particles Synthesized by Vapor Phase Pyrolysis

Microstructure and Electronic Structures of Er-Doped Si Nano-particles Synthesized by Vapor Phase Pyrolysis

Access: Use of this item is restricted to the UNT Community.
Date: May 2000
Creator: Chen, Yandong
Description: Si nanoparticles are new prospective optoelectronic materials. Unlike bulk Si cry-stals, Si nanoparticles display intriguing room-temperature photoluminescence. A major challenge in the fabrication of Si nanoparticles is the control of their size distribution. The rare-earth element Er has unique photo emission properties, including low pumping power, and a temperature independent, sharp spectrum. The emission wavelength matches the transmission window of optical fibers used in the telecommunications industry. Therefore, the study of Er-doped Si nanoparticles may have practical significance. The goals of the research described in this dissertation are to investigate vapor phase pyrolysis methods and to characterize the microstructure and associated defects, particles size distributions and photoluminescence efficiencies of doped and undoped Si nanoparticles using analytical transmission electron microscopy, high resolution electron microscopy, and optical spectroscopy. Er-doped and undoped Si nanoparticles were synthesized via vapor-phase pyrolysis of disilane at Texas Christian University. To achieve monodisperse size distributions, a process with fast nucleation and slow growth was employed. Disilane was diluted to 0.48% with helium. A horizontal pyrolysis oven was maintained at a temperature of 1000 °C. The oven length was varied from 1.5 cm to 6.0 cm to investigate the influence of oven length on the properties of the nanoparticles. ...
Contributing Partner: UNT Libraries
Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Charge Collection Studies on Integrated Circuit Test Structures using Heavy-Ion Microbeams and MEDICI Simulation Calculations

Date: May 2000
Creator: Guo, Baonian
Description: Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the presence of ionizing radiation in the IC environment. As the charge signals defining data states are reduced by voltage and area scaling, the semiconductor device will naturally have a higher susceptibility to ionizing radiation induced effects. The ionizing radiation can lead to the undesired generation and migration of charge within an IC. This can alter, for example, the memory state of a bit, and thereby produce what is called a "soft" error, or Single Event Upset (SEU). Therefore, the response of ICs to natural radiation is of great concern for the reliability of future devices. Immunity to soft errors is listed as a requirement in the 1997 National Technology Roadmap for Semiconductors prepared by the Semiconductor Industry Association in the United States. To design more robust devices, it is essential to create and test accurate models of induced charge collection and transport in semiconductor devices. A heavy ion microbeam produced by an accelerator is an ideal tool to study charge collection processes in ICs and to locate the weak nodes and structures for improvement through hardening design. In this dissertation, the Ion Beam Induced Charge Collection ...
Contributing Partner: UNT Libraries
Growing carbon nanotubes by chemical vapor deposition technique.

Growing carbon nanotubes by chemical vapor deposition technique.

Access: Use of this item is restricted to the UNT Community.
Date: May 2000
Creator: Rajan, Harihar V.
Description: Carbon nanotubes were synthesized in the laboratory using chemical vapor deposition at different methane concentration. I found that a methane concentration of 4 sccm was ideal for well recognizable carbon nanotubes. A higher concentration led to fewer nanotube growth and silicon carbide structure. Coating the sample first with Fe(NO3)3 created a catalyst base on the substrate for the nanotube to adhere and grow on.
Contributing Partner: UNT Libraries
Scanning Tunneling Microscopy of Homo-epitaxial Chemical Vapor Deposited Diamond (100) Films

Scanning Tunneling Microscopy of Homo-epitaxial Chemical Vapor Deposited Diamond (100) Films

Access: Use of this item is restricted to the UNT Community.
Date: May 2000
Creator: Stallcup, Richard E.
Description: Atomic resolution images of hot-tungsten filament chemical-vapor-deposition (CVD) grown epitaxial diamond (100) films obtained in ultrahigh vacuum (UHV) with a scanning tunneling microscope (STM) are reported. A (2x1) dimer surface reconstruction and amorphous atomic regions were observed on the hydrogen terminated (100) surface. The (2x1) unit cell was measured to be 0.51"0.01 x 0.25"0.01 nm2. The amorphous regions were identified as amorphous carbon. After CVD growth, the surface of the epitaxial films was amorphous at the atomic scale. After 2 minutes of exposure to atomic hydrogen at 30 Torr and the sample temperature at 500° C, the surface was observed to consist of amorphous regions and (2x1) dimer reconstructed regions. After 5 minutes of exposure to atomic hydrogen, the surface was observed to consist mostly of (2x1) dimer reconstructed regions. These observations support a recent model for CVD diamond growth that is based on an amorphous carbon layer that is etched or converted to diamond by atomic hydrogen. With further exposure to atomic hydrogen at 500° C, etch pits were observed in the shape of inverted pyramids with {111} oriented sides. The temperature dependence of atomic hydrogen etching of the diamond (100) surface was also investigated using UHV STM, and ...
Contributing Partner: UNT Libraries
Energy Distribution of Sputtered Neutral Atoms from a Multilayer Target

Energy Distribution of Sputtered Neutral Atoms from a Multilayer Target

Date: August 2000
Creator: Bigelow, Alan W.
Description: Energy distribution measurements of sputtered neutral particles contribute to the general knowledge of sputtering, a common technique for surface analysis. In this work emphasis was placed on the measurement of energy distribution of sputtered neutral atoms from different depths. The liquid Ga-In eutectic alloy as a sample target for this study was ideal due to an extreme concentration ratio gradient between the top two monolayers. In pursuing this study, the method of sputter-initiated resonance ionization spectroscopy (SIRIS) was utilized. SIRIS employs a pulsed ion beam to initiate sputtering and tunable dye lasers for resonance ionization. Observation of the energy distribution was achieved with a position-sensitive detector. The principle behind the detector's energy resolution is time of flight (TOF) spectroscopy. For this specific detector, programmed time intervals between the sputtering pulse at the target and the ionizing laser pulse provided information leading to the energy distribution of the secondary neutral particles. This experiment contributes data for energy distributions of sputtered neutral particles to the experimental database, required by theoretical models and computer simulations for the sputtering phenomenon.
Contributing Partner: UNT Libraries
Nested Well Plasma Traps

Nested Well Plasma Traps

Date: August 2000
Creator: Dolliver, Darrell
Description: Criteria for the confinement of plasmas consisting of a positive and negative component in Penning type traps with nested electric potential wells are presented. Computational techniques for the self-consistent calculation of potential and plasma density distributions are developed. Analyses are presented of the use of nested well Penning traps for several applications. The analyses include: calculations of timescales relevant to the applications, e.g. reaction, confinement and relaxation timescales, self-consistent computations, and consideration of other physical phenomenon important to the applications. Possible applications of a nested well penning trap include production of high charge state ions, studies of high charge state ions, and production of antihydrogen. In addition the properties of a modified Penning trap consisting of an electric potential well applied along a radial magnetic field are explored.
Contributing Partner: UNT Libraries
Space-Charge Saturation and Current Limits in Cylindrical Drift Tubes and Planar Sheaths

Space-Charge Saturation and Current Limits in Cylindrical Drift Tubes and Planar Sheaths

Date: August 2000
Creator: Stephens, Kenneth Frank
Description: Space-charge effects play a dominant role in many areas of physics. In high-power microwave devices using high-current, relativistic electron beams, it places a limit on the amount of radiation a device can produce. Because the beam's space-charge can actually reflect a portion of the beam, the ability to accurately predict the amount of current a device can carry is needed. This current value is known as the space-charge limited current. Because of the mathematical difficulties, this limit is typically estimated from a one-dimensional theory. This work presents a two-dimensional theory for calculating an upper-bound for the space-charge limited current of relativistic electron beams propagating in grounded coaxial drift tubes. Applicable to annular beams of arbitrary radius and thickness, the theory includes the effect introduced by a finite-length drift tube of circular cross-section. Using Green's second identity, the need to solve Poisson's equation is transferred to solving a Sturm-Liouville eigenvalue problem, which is easily solved by elementary methods. In general, the resulting eigenvalue, which is required to estimate the limiting current, must be numerically determined. However, analytic expressions can be found for frequently encountered limiting cases. Space-charge effects also produce the fundamental collective behavior found in plasmas, especially in plasma sheaths. ...
Contributing Partner: UNT Libraries
The stopping of energetic Si, P and S ions in Ni, Cu, Ge and GaAs targets.

The stopping of energetic Si, P and S ions in Ni, Cu, Ge and GaAs targets.

Access: Use of this item is restricted to the UNT Community.
Date: December 2001
Creator: Nigam, Mohit
Description: Accurate knowledge of stopping powers is essential for these for quantitative analysis and surface characterization of thin films using ion beam analysis (IBA). These values are also of interest in radiobiology and radiotherapy, and in ion- implantation technology where shrinking feature sizes puts high demands on the accuracy of range calculations. A theory that predicts stopping powers and ranges for all projectile-target combinations is needed. The most important database used to report the stopping powers is the SRIM/TRIM program developed by Ziegler and coworkers. However, other researchers report that at times, these values differ significantly from experimental values. In this study the stopping powers of Si, P and S ions have been measured in Ni, Cu, Ge and GaAs absorbers in the energy range ~ 2-10 MeV. For elemental films of Ni, Cu and Ge, the stopping of heavy ions was measured using a novel ERD (Elastic Recoil Detection) based technique. In which an elastically recoiled lighter atom is used to indirectly measure the energy of the incoming heavy ion using a surface barrier detector. In this way it was possible to reduce the damage and to improve the FWHM of the detector. The results were compared to SRIM-2000 predictions ...
Contributing Partner: UNT Libraries
Microwave Cavity Test for Superconductivity

Microwave Cavity Test for Superconductivity

Access: Use of this item is restricted to the UNT Community.
Date: December 2001
Creator: Tang, Shan
Description: The first part of this paper describes the Meissner effect in superconductors which serves as the most definitive evidence for superconductivity. It is shown that the microwave perturbation technique may be used to demonstrate this effect. By measuring the changes of resonant frequency and inverse quality factor Q of a microwave cavity with a small volume of sample loading, the Meissner effect can be shown by using the Slater perturbation equation. The experimental system is described with details and the basic principle of each component discussed. The second part of this work describes the technique employed to do the actual measurements. The experiments were conducted on samples of Gallium Arsenide (GaAs) and lead zirconate titanate (PZT) to look for the possible high temperature superconductivity properties. Results of these experiments are presented and discussed. Conclusion and suggestions to future exploration are made.
Contributing Partner: UNT Libraries
A Statistical Study of Hard X-Ray Solar Flares

A Statistical Study of Hard X-Ray Solar Flares

Date: December 2001
Creator: Leddon, Deborah L.
Description: The results of a statistical study of hard x-ray solar flares are presented in this dissertation. Two methods of analysis were used, the Diffusion Entropy (DE) method coupled with an analysis of the data distributions and the Rescaled Range (R/S) Method, sometimes referred to as "Hurst's method". Chapter one provides an introduction to hard x-ray flares within the context of the solar environment and a summary of the statistical paradigms solar astronomers currently work under. Chapter two presents the theory behind the DE and R/S methods. Chapter three presents the results of the two analysis methodologies: most notably important evidence of the conflicting results of the R/S and DE methods, evidence of a Levy statistical signature for the underlying dynamics of the hard x-ray flaring process and a possible separate memory signature for the waiting times. In addition, the stationary and nonstationary characteristics of the waiting times and peak intensities, are revealed. Chapter four provides a concise summary and discussion of the results.
Contributing Partner: UNT Libraries
FIRST PREV 1 2 3 4 5 NEXT LAST