You limited your search to:

  Partner: UNT Libraries
 Degree Discipline: Physics
 Degree Level: Doctoral
 Collection: UNT Theses and Dissertations
High Efficiency High Power Blue Laser by Resonant Doubling in PPKTP

High Efficiency High Power Blue Laser by Resonant Doubling in PPKTP

Date: August 2011
Creator: Danekar, Koustubh
Description: I developed a high power blue laser for use in scientific and technical applications (eg. precision spectroscopy, semiconductor inspection, flow cytometry, etc). It is linearly polarized, single longitudinal and single transverse mode, and a convenient fiber coupled continuous wave (cw) laser source. My technique employs external cavity frequency doubling and provides better power and beam quality than commercially available blue diode lasers. I use a fiber Bragg grating (FBG) stabilized infrared (IR) semiconductor laser source with a polarization maintaining (PM) fiber coupled output. Using a custom made optical and mechanical design this output is coupled with a mode matching efficiency of 96% into the doubling cavity. With this carefully designed and optimized cavity, measurements were carried out at various fundamental input powers. A net efficie ncy of 81 % with an output power of 680 mW at 486 nm was obtained using 840 mW of IR input. Also I report an 87.5 % net efficiency in coupling of blue light from servo locked cavity into a single mode PM fiber. Thus I have demonstrated a total fiber to fiber efficiency of 71% can be achieved in our approach using periodically poled potassium titanyl phosphate (PPKTP). To obtain these results, all ...
Contributing Partner: UNT Libraries
The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms

The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms

Date: August 2011
Creator: Behera, Swayambhu Prasad
Description: Nanoporous low-k dielectrics are used for integrated circuit interconnects to reduce the propagation delays, and cross talk noise between metal wires as an alternative material for SiO2. These materials, typically organosilicate glass (OSG) films, are exposed to oxygen plasmas during photoresist stripping and related processes which substantially damage the film by abstracting carbon, incorporating O and OH, eventually leading to significantly increased k values. Systematic studies have been performed to understand the oxygen plasma-induced damage mechanisms on different low-k OSG films of various porosity and pore interconnectedness. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and atomic force microscopy are used to understand the damage kinetics of O radicals, ultraviolet photons and charged species, and possible ways to control the carbon loss from the film. FTIR results demonstrate that O radical present in the plasma is primarily responsible for carbon abstraction and this is governed by diffusion mechanism involving interconnected film nanopores. The loss of carbon from the film can be controlled by closing the pore interconnections, He plasma pretreatment is an effective way to control the damage at longer exposure by closing the connections between the pores.
Contributing Partner: UNT Libraries
Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Investigation of Selected Optically-Active Nanosystems Fashioned using Ion Implantation

Date: May 2006
Creator: Mitchell, Lee
Description: Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active ...
Contributing Partner: UNT Libraries
Investigation of the Uniaxial Stress Dependence of the Effective Mass in N-Type InSb Using the Magnetophonon Effect

Investigation of the Uniaxial Stress Dependence of the Effective Mass in N-Type InSb Using the Magnetophonon Effect

Date: December 1971
Creator: Alsup, Dale Lynn
Description: The magnetophonon effect was used to investigate the uniaxial stress dependence of the effective mass in n-type InSb (indium antimonide).
Contributing Partner: UNT Libraries
Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

Date: May 2011
Creator: Poudel, Prakash Raj
Description: The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process ...
Contributing Partner: UNT Libraries
Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions

Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions

Date: May 2006
Creator: Roth, Elaine Grannan
Description: A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over its complimentary defect (i.e., a vacancy). Mechanisms for producing such excesses by implantation will be discussed. The basis of this model specifies that accumulation of stable lattice damage during implantation depends upon the excess defects and not the total number of defects. The excess defect model is validated by fundamental damage studies involving ion implantation over a range of conditions. Confirmation of the model is provided by comparing damage profiles after implantation with computer simulation results. It will be shown that transport of ions in matter (TRIM) can be used effectively to model the ion-induced damage profile, i.e. excess defect distributions, by a simple subtraction process in which the spatially correlated defects are removed, thereby simulating recombination. Classic defect studies ...
Contributing Partner: UNT Libraries
Magneto-Optical and Chaotic Electrical Properties of n-InSb

Magneto-Optical and Chaotic Electrical Properties of n-InSb

Date: December 1991
Creator: Song, Xiang-Ning
Description: This thesis investigation concerns the optical and nonlinear electrical properties of n-InSb. Two specific areas have been studied. First is the magneto-optical study of magneto-donors, and second is the nonlinear dynamic study of nonlinear and chaotic oscillations in InSb. The magneto-optical study of InSb provides a physical picture of the magneto-donor levels, which has an important impact on the physical model of nonlinear and chaotic oscillations. Thus, the subjects discussed in this thesis connect the discipline of semiconductor physics with the field of nonlinear dynamics.
Contributing Partner: UNT Libraries
Magnetomorphic Oscillations in Zinc

Magnetomorphic Oscillations in Zinc

Date: August 1970
Creator: Waller, William Marvin
Description: In making this study it is important to search for ways to enhance and, if possible, make detection of MMO signals simpler in order that this technique for obtaining FS measurements may be extended to other materials. This attempt to improve measurement techniques has resulted in a significant discovery: the eddy-current techniques described in detail in a later section which should allow MMO to be observed and sensitively measured in many additional solids. The second major thrust of the study has been to use the newly discovered eddy-current technique in obtaining the first indisputable observation of MMO in zinc.
Contributing Partner: UNT Libraries
Magnetotransport Properties of  AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx

Magnetotransport Properties of AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx

Date: May 2003
Creator: Lukic- Zrnic, Reiko
Description: Multilayer structures of AlxIn1-xAsySb1-y/GaSb (0.37 £ x £ 0.43, 0.50 £ y £ 0.52), grown by molecular beam epitaxy on GaSb (100) substrates were characterized using variable temperature Hall and Shubnikov-de Haas techniques. For nominally undoped structures both p and n-type conductivity was observed. The mobilities obtained were lower than those predicted by an interpolation method using the binary alloys; therefore, a detailed analysis of mobility versus temperature data was performed to extract the appropriate scattering mechanisms. For p-type samples, the dominant mechanism was ionized impurity scattering at low temperatures and polar optical phonon scattering at higher temperatures. For n-type samples, ionized impurity scattering was predominant at low temperatures, and electron-hole scattering dominated for both the intermediate and high temperature range. Analyses of the Shubnikov-de Haas data indicate the presence of 2-D carrier confinement consistent with energy subbands in GaAszSb1-z potential wells. Epilayers of GaAs1-xSbx (0.19<x<0.71), grown by MBE on semi-insulating GaAs with various substrate orientations, were studied by absorption measurements over the temperature range of 4-300 K. The various substrate orientations were chosen to induce different degrees of spontaneous atomic ordering. The temperature dependence of the energy gap (Eg) for each of these samples was modeled using three semi-empirical ...
Contributing Partner: UNT Libraries
Mechanism and the Effect of Microwave-Carbon Nanotube Interaction

Mechanism and the Effect of Microwave-Carbon Nanotube Interaction

Date: December 2005
Creator: Ye, Zhou
Description: A series of experimental results about unusual heating of carbon nanotubes by microwaves is analyzed in this dissertation. Two of vibration types, cantilever type (one end is fixed and the other one end is free), the second type is both ends are fixed, have been studied by other people. A third type of forced vibration of carbon nanotubes under an alternating electromagnetic field is examined in this paper. Heating of carbon nanotubes (CNTs) by microwaves is described in terms of nonlinear dynamics of a vibrating nanotube. Results from the model provide a way to understand several observations that have been made. It is shown that transverse vibrations of CNTs during microwave irradiation can be attributed to transverse parametric resonance, as occurs in the analysis of Melde's experiment on forced longitudinal vibrations of a stretched elastic string. For many kinds of carbon nanotubes (SWNT, DWNT, MWNT, ropes and strands) the resonant parameters are found to be located in an unstable region of the parameter space of Mathieu's equation. Third order wave equations are used to qualitatively describe the effects of phonon-phonon interactions and energy transfer from microwaves to CNTs. This result provides another way to input energy from microwaves to carbon ...
Contributing Partner: UNT Libraries