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  Partner: UNT Libraries
 Language: English
 Degree Discipline: Physics
 Collection: UNT Theses and Dissertations
Electron Density and Collision Frequency Studies Using a Resonant Microwave Cavity as a Probe

Electron Density and Collision Frequency Studies Using a Resonant Microwave Cavity as a Probe

Date: May 1973
Creator: Freeman, Ronald Harold
Description: Electron densities and collision frequencies were obtained on a number of gases in a dc discharge at low pressures (0.70-2mm of Hg). These measurements were performed by microwave probing of a filament of the dc discharge placed coaxially in a resonant cavity operating in a TM₀₁₀ mode. The equipment and techniques for making the microwave measurements employing the resonant cavity are described. One of the main features of this investigation is the technique of differentiating the resonance signal of the loaded cavity in order to make accurate measurements of the resonant frequency and half-power point frequencies.
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A New Approach for Transition Metal Free Magnetic Sic: Defect Induced Magnetism After Self-ion Implantation

A New Approach for Transition Metal Free Magnetic Sic: Defect Induced Magnetism After Self-ion Implantation

Date: May 2013
Creator: Kummari, Venkata Chandra Sekhar
Description: SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil industry, nuclear power systems, aeronautical, and space applications. SiC is also known for its polytypism and among them 3C-SiC, 4H-SiC and 6H-SiC are the most common polytypes used for research purposes. Among these polytypes 4H-SiC is gaining importance due to its easy commercial availability with a large bandgap of 3.26 eV at room temperature. Controlled creation of defects in materials is an approach to modify the electronic properties in a way that new functionality may result. SiC is a promising candidate for defect-induced magnetism on which spintronic devices could be developed. The defects considered are of room temperature stable vacancy types, eliminating the need for magnetic impurities, which easily diffuse at room temperature. Impurity free vacancy type defects can be created by implanting the host atoms of silicon or carbon. The implantation fluence determines the defect density, which is a critical parameter for defect induced magnetism. Therefore, we have studied the influence ...
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Transport Phenomena in Indium Arsenide at Low Temperatures

Transport Phenomena in Indium Arsenide at Low Temperatures

Date: August 1968
Creator: Luke, Paul Jacob
Description: This thesis looks at the transport phenomena in indium arsenide at low temperatures.
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Solutions of the Equations of Radiative Transfer by an Invariant Imbedding Approach

Solutions of the Equations of Radiative Transfer by an Invariant Imbedding Approach

Date: January 1969
Creator: Adams, Charles N.
Description: This thesis is a study of the solutions of the equations of radiative transfer by an invariant imbedding approach.
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Monte Carlo Calculations of Reflected Intensities for Real Spherical Atmospheres

Monte Carlo Calculations of Reflected Intensities for Real Spherical Atmospheres

Date: January 1969
Creator: Montgomery, John A.
Description: To calculate the emergent radiation field, a realistic atmospheric model and algorithm must be developed. The radiation field may be characterized by the emergent intensities of scattered light. This is possible only if the algorithm determines these intensities as dependent upon atmospheric and angular parameters.
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Boundary Scattering of Electrons in Thin Cadmium Single Crystals

Boundary Scattering of Electrons in Thin Cadmium Single Crystals

Date: August 1968
Creator: Fortmayer, Gary William
Description: In the present investigation, zinc was plated onto a cadmium crystal to determine the effect on the scattering parameter.
Contributing Partner: UNT Libraries
Size Effect in the Electrical Conductivity of Bismuth

Size Effect in the Electrical Conductivity of Bismuth

Date: August 1967
Creator: Vaughn, Bobby J.
Description: If a physical dimension of a metallic specimen is comparable with, or smaller than, the mean free path of the conduction electrons, then the observed electrical conductivity will be less than that of a conventional bulk sample. This phenomenon is called a size effect, and is the result of electron scattering from the specimen surfaces. In the present investigation, measurements were made on electropolished monocrystalline specimens ranging from matchbox geometry to thick-film geometry in order to obtain further information on the size effect in bismuth at liquid helium temperatures.
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The Effects of Lead Placement and Sample Shape in the Measurement of Electrical Resistivity

The Effects of Lead Placement and Sample Shape in the Measurement of Electrical Resistivity

Date: August 1970
Creator: Stephens, Anthony E.
Description: This thesis is a study of the effects of lead placement and sample shape in the measurement of electrical resistivity.
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A Determination of the Bothe Depression Factor for Discs in Water

A Determination of the Bothe Depression Factor for Discs in Water

Date: August 1950
Creator: Patton, Bob
Description: The purpose of this work is to determine experimentally the depression of the neutron density by a detecting foil. The depression factor is known as the "self-shading" of the foil.
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A Study of the Decay Levels of 169/Tm69

A Study of the Decay Levels of 169/Tm69

Date: December 1970
Creator: Harris, Robert J.
Description: The purpose of this investigation was to study the radiations of the 169/Tm nucleus as it de-excites after the electron capture decay of the 169/Yb. Numerous unreported gammas were present in the sample. The origins of these gamma rays were found.
Contributing Partner: UNT Libraries
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