Description: In a sub-wavelength scale, even approaching to the atomic scale, nanoscale physics shows various novel phenomena. Since it has been named, nanoscience and nanotechnology has been employed to explore and exploit this small scale world. For example, with various functionalized features, nanowire (NW) has been making its leading position in the researches of physics, chemistry, biology, and engineering as a miniaturized building block. Its individual characteristic shows superior and unique features compared with its bulk counterpart. As one part of these research efforts and progresses, and with a part of the fulfillment of degree study, novel methodologies and device structures in nanoscale were devised and developed to show the abilities of high performing thermoelectrical, biological, and optical applications. A single β-SiC NW was characterized for its thermoelectric properties (thermal conductivity, Seebeck coefficient, and figure of merit) to compare with its bulk counterpart. The combined structure of Ag NW and ND was made to exhibit its ability of clear imaging of a fluorescent cell. And a plasmonic nanosture of silver (Ag) nanodot array and a β-SiC NW was fabricated to show a high efficient light harvesting device that allows us to make a better efficient solar cell. Novel nanomanipulation techniques were ...

Description: In this paper, two projects have been undertaken. First, Workman's calculations have been checked to a higher degree of approximation to determine the accuracy of his method. Second, a new set of boundary conditions has been developed for obtaining solutions of the neutron diffusion equation which do not depend on the solution of the equation inside the detector.

Description: Many processes and systems in nature and society can be characterized as large numbers of discrete elements that are (usually non-uniformly) interrelated. These networks were long thought to be random, but in the late 1990s, Barabási and Albert found that an underlying structure did in fact exist in many natural and technological networks that are now referred to as scale free. Since then, researchers have gained a much deeper understanding of this particular form of complexity, largely by combining graph theory, statistical physics, and advances in computing technology. This dissertation focuses on out-of-equilibrium dynamic processes as they unfold on these complex networks. Diffusion in networks of non-interacting nodes is shown to be temporally complex, while equilibrium is represented by a stable state with Poissonian fluctuations. Scale free networks achieve equilibrium very quickly compared to regular networks, and the most efficient are those with the lowest inverse power law exponent. Temporally complex diffusion also occurs in networks with interacting nodes under a cooperative decision-making model. At a critical value of the cooperation parameter, the most efficient scale free network achieves consensus almost as quickly as the equivalent all-to-all network. This finding suggests that the ubiquity of scale free networks in nature ...

Description: We show that the nonadditive open systems can be studied in a consistent manner by using a generalized version of S-theorem. This new generalized S-theorem can further be considered as an indication of self-organization in nonadditive open systems as prescribed by Haken. The nonadditive S-theorem is then illustrated by using the modified Van der Pol oscillator. Finally, Tsallis entropy as an equilibrium entropy is studied by using Boltzmann's method of orthodes. This part of dissertation shows that Tsallis ensemble is on equal footing with the microcanonical, canonical and grand canonical ensembles. However, the associated entropy turns out to be Renyi entropy.

Description: A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A dilute GeSi layer is initially formed by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x thin-film with a composition that can be tailored by controlling the oxidation parameters (e.g. temperature and oxidation ambient). In addition, the film thickness can be controlled by implantation fluence, which is important since the film forms pseudomorphically below 2×1016 Ge/cm2. Continued oxidation consumes the underlying Si leaving the strained GeSi film encapsulated by the two oxide layers, i.e. the top thermal oxide and the buried oxide. Removal of the thermal oxide by a dilute HF etch completes the process. Strain relaxation can be achieved by either of two methods. One involves vacancy injection by ion implantation to introduce sufficient open-volume within the film to compensate for the compressive strain. The other depends upon the formation of GeO2. If Ge is oxidized in the absence of Si, it evaporates as GeO(g) resulting in spontaneous ...