Description: Generation and migration of helium and other point defects under irradiation causes ferritic steels based on the Fe-Cr system to age and fail. This is motivation to study point defect migration and the He equation of state using atomistic simulations due to the steels' use in future reactors. A new potential for the Fe-Cr-He system developed by collaborators at the Lawrence Livermore National Laboratory was validated using published experimental data. The results for the He equation of state agree well with experimental data. The activation energies for the migration of He- and Fe-interstitials in varying compositions of Fe-Cr lattices agree well with prior work. This research did not find a strong correlation between lattice ordering and interstitial migration energy

Description: Many organic materials have been studied to be used as semiconductors, few of them being pentacene and polythiophene. Organic semiconductors have been investigated to make organic thin film transistors. Pentacene has been used in the active region of the transistors. Transistors fabricated with pentacene do not have very high mobility. But in some applications, high mobility is not needed. In such application other properties of organic transistors are used, such as, ease of production and flexibility. Organic thin film transistors (OTFT) can find use as low density storage devices, such as smart cards or I.D. tags, and displays. OTFT are compatible with polymeric substrates and hence can find use as flexible computer screens. This project aims at making 'smart clothes', the cheap way, with pentacene based OTFT. This problem in lieu of thesis describes a way to deposit pentacene films and characterize it. Pentacene films were deposited on substrates and characterized using x-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). The substrate used was ~1500Å platinum on silicon wafer or bare silicon wafer. was used. A deposition system for vacuum deposition of pentacene was assembled. The XRD data for deposited pentacene films shows the presence of two phases, single ...

Description: Recent commercial developments have created a need for alternative materials and methods for imparting oil/grease resistance to paper and/or paperboard used in packaging. The performance of a novel grease resistant functional coating comprised of polyvinyl alcohol (PVA), sodium tetraborate pentahydrate (borate) and acetonedicarboxylic acid (ACDA) and the application of said coating by means of flexographic press is presented herein. Application criteria is developed, testing procedures described, and performance assessment of the developed coating materials are made. SEM images along with contact angle data suggest that coating performance is probably attributable to decreased mean pore size in conjunction with a slightly increased surface contact angle facilitated by crosslinking of PVA molecules by both borate ions and ACDA.

Description: Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using hydrogen to improve electronic performance of electronic structures. Trap transformations under annealing treatments in hydrogen ambient normally involve passivation of traps at thermal SiO2/Si interfaces by hydrogen. High-κ dielectric films are believed to exhibit significantly higher charge trapping affinity than SiO2. In this thesis, study of hydrogen trapping in alternate gate dielectric candidates such as HfO2 during annealing in hydrogen ambient is presented. Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA) were used to characterize these thin dielectric materials. It was demonstrated that hydrogen trapping in bulk HfO2 is significantly reduced for pre-oxidized HfO2 prior to forming gas anneals. This strong dependence on oxygen pre-processing is believed to be due to oxygen vacancies/deficiencies and hydrogen-carbon impurity complexes that originate from organic precursors used in ...

Description: Nanoindentation has brought in many features of research over the past decade. This novel technique is capable of producing insights into the small ranges of deformation. This special point has brought a lot of focus in understanding the deformation behavior under the indenter. Nickel, iron, tungsten and copper-niobium alloy system were considered for a surface deformation study. All the samples exhibited a spectrum of residual deformation. The change in behavior with indentation and the materials responses to deformation at low and high loads is addressed in this study. A study on indenter geometry, which has a huge influence on the contact area and subsequently the hardness and modulus value, has been attempted. Deformation mechanisms that govern the plastic flow in materials at low loads of indentation and their sensitivity to the rate of strain imparted has been studied. A transition to elastic, plastic kind of a tendency to an elasto-plastic tendency was seen with an increase in the strain rate. All samples exhibited the same kind of behavior and a special focus is drawn in comparing the FCC nickel with BCC tungsten and iron where the persistence of the elastic, plastic response was addressed. However there is no absolute reason ...