The observation of silicon nanocrystals in siloxene

Description:

This article discusses the observation of silicon nanocrystals in siloxene using high resolution transmission electron microscopy.

Creator(s):
Creation Date: May 1, 1994
Partner(s):
UNT College of Arts and Sciences
Collection(s):
UNT Scholarly Works
Usage:
Total Uses: 74
Past 30 days: 6
Yesterday: 0
Creator (Author):
Pinizzotto, Russell F.

University of North Texas

Creator (Author):
Yang, H.

University of North Texas

Creator (Author):
Pérez, José M.

University of North Texas

Creator (Author):
Coffer, J. L.

Texas Christian University

Publisher Info:
Place of Publication: [College Park, Maryland]
Date(s):
  • Creation: May 1, 1994
Description:

This article discusses the observation of silicon nanocrystals in siloxene using high resolution transmission electron microscopy.

Degree:
Department: Physics
Note:

Copyright 1994 American Institute of Physics. Journal of Applied Physics, 75:9, pp. 4486-4488, http://jap.aip.org/resource/1/japiau/v75/i9/p4486_s1

Note:

Abstract: We report the direct observation of silicon nanocrystals in unannealed siloxene using high resolution transmission electron microscopy. The microstructure consists of an amorphous matrix plus silicon crystallites with dimensions of a few nanometers. This is additional evidence that the photoluminescence of silicon-based materials is due to quantum confinement.

Physical Description:

4 p.

Language(s):
Subject(s):
Keyword(s): silicon | nanostructures | TEM | microstructures | amorphous states | high-resolution methods
Source: Journal of Applied Physics, 1994, College Park: American Institute of Physics, pp. 4486-4488
Partner:
UNT College of Arts and Sciences
Collection:
UNT Scholarly Works
Identifier:
  • DOI: 10.1063/1.355938
  • ARK: ark:/67531/metadc84364
Resource Type: Article
Format: Text
Rights:
Access: Public
Citation:
Publication Title: Journal of Applied Physics
Volume: 75
Issue: 9
Page Start: 4486
Page End: 4488
Pages: 3
Peer Reviewed: Yes