Interfacial Studies of Bimetallic Corrosion in Copper/Ruthenium Systems and Silicon Surface Modification with Organic and Organometallic Chemistry

Access: Use of this item is restricted to the UNT Community
Description:

To form Cu interconnects, dual-damascene techniques like chemical mechanical planarization (CMP) and post-CMP became inevitable for removing the "overburden" Cu and for planarizing the wafer surface. During the CMP processing, Cu interconnects and barrier metal layers experience different electrochemical interactions depending on the slurry composition, pH, and ohmic contact with adjacent metal layers that would set corrosion process. Ruthenium as a replacement of existing diffusion barrier layer will require extensive investigation to eliminate or control the corrosion process during CMP and post CMP. Bimetallic corrosion process was investigated in the ammonium citrate (a complexing agent of Cu in CMP solutions) using micro test patterns and potentiodynamic measurements. The enhanced bimetallic corrosion of copper observed is due to noble behavior of the ruthenium metal. Cu formed Cu(II)-amine and Cu(II)-citrate complexes in alkaline and acidic solutions and a corrosion mechanism has been proposed. The currently used metallization process (PVD, CVD and ALD) require ultra-high vacuum and are expensive. A novel method of Si surface metallization process is discussed that can be achieved at room temperature and does not require ultra-high vacuum. Ruthenation of Si surface through strong Si-Ru covalent bond formation is demonstrated using different ruthenium carbonyl compounds. RBS analysis accounted for monolayer to sub-monolayer coverage of Si surface. Interaction of other metal carbonyl (like Fe, Re, and Rh) is also discussed. The silicon (111) surface modifications with vinyl terminated organic compounds were investigated to form self-assembled monolayers (SAMs) and there after these surfaces were further functionalized. Acrylonitrile and vinylbenzophenone were employed for these studies. Ketone group of vinylbenzophenone anchored to Si surface demonstrated reactivity with reducing and oxidizing agents.

Creator(s): Nalla, Praveen Reddy
Creation Date: August 2006
Partner(s):
UNT Libraries
Collection(s):
UNT Theses and Dissertations
Usage:
Total Uses: 277
Past 30 days: 11
Yesterday: 2
Creator (Author):
Publisher Info:
Publisher Name: University of North Texas
Place of Publication: Denton, Texas
Date(s):
  • Creation: August 2006
  • Digitized: April 2, 2008
Description:

To form Cu interconnects, dual-damascene techniques like chemical mechanical planarization (CMP) and post-CMP became inevitable for removing the "overburden" Cu and for planarizing the wafer surface. During the CMP processing, Cu interconnects and barrier metal layers experience different electrochemical interactions depending on the slurry composition, pH, and ohmic contact with adjacent metal layers that would set corrosion process. Ruthenium as a replacement of existing diffusion barrier layer will require extensive investigation to eliminate or control the corrosion process during CMP and post CMP. Bimetallic corrosion process was investigated in the ammonium citrate (a complexing agent of Cu in CMP solutions) using micro test patterns and potentiodynamic measurements. The enhanced bimetallic corrosion of copper observed is due to noble behavior of the ruthenium metal. Cu formed Cu(II)-amine and Cu(II)-citrate complexes in alkaline and acidic solutions and a corrosion mechanism has been proposed. The currently used metallization process (PVD, CVD and ALD) require ultra-high vacuum and are expensive. A novel method of Si surface metallization process is discussed that can be achieved at room temperature and does not require ultra-high vacuum. Ruthenation of Si surface through strong Si-Ru covalent bond formation is demonstrated using different ruthenium carbonyl compounds. RBS analysis accounted for monolayer to sub-monolayer coverage of Si surface. Interaction of other metal carbonyl (like Fe, Re, and Rh) is also discussed. The silicon (111) surface modifications with vinyl terminated organic compounds were investigated to form self-assembled monolayers (SAMs) and there after these surfaces were further functionalized. Acrylonitrile and vinylbenzophenone were employed for these studies. Ketone group of vinylbenzophenone anchored to Si surface demonstrated reactivity with reducing and oxidizing agents.

Degree:
Level: Doctoral
Discipline: Chemistry
Language(s):
Subject(s):
Keyword(s): bimettalic corrosion | alkylation | copper | interfacial | CMP | metallization | ruthenium carbonyl | silicon | ruthenium | surface modification
Contributor(s):
Partner:
UNT Libraries
Collection:
UNT Theses and Dissertations
Identifier:
  • OCLC: 74323556 |
  • ARK: ark:/67531/metadc5600
Resource Type: Thesis or Dissertation
Format: Text
Rights:
Access: Use restricted to UNT Community (strictly enforced)
License: Copyright
Holder: Nalla, Praveen Reddy
Statement: Copyright is held by the author, unless otherwise noted. All rights reserved.