Magnetotransport Properties of AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx Page: 67
View a full description of this dissertation.
Extracted Text
The following text was automatically extracted from the image on this page using optical character recognition software:
electron mobility in these structures. Therefore, it was assumed that the effective
mobility had contributions from both, the AlInAsSb and GaSb layers. Thus, the total
effective mobility can be written as
1_ 1 1
= C, + C2 Y (4.1)
/eff , p,(AllnAsSb) , , (GaSb)
where u,(AllnAsSb) and ,(GaSb) refer to the each individual mobility from various
scattering processes in AlInAsSb and GaSb layer, respectively. The coefficients C1 and
C2 are functions of thickness and their ratio depends on the ratio of channel thickness.
The main scattering processes considered were ionized impurity, polar optical
phonon, non-polar optical phonon and acoustic scattering. The individual mobilities were
expressed by calculating the mean of momentum relaxation times [15] for ionized
impurity [8], polar, non-polar [11] and acoustic [9] scattering mechanisms. The average
mobility was obtained using Mattheisen's rule [15], by adding the reciprocals of the
partial mobilities.67
Upcoming Pages
Here’s what’s next.
Search Inside
This dissertation can be searched. Note: Results may vary based on the legibility of text within the document.
Tools / Downloads
Get a copy of this page or view the extracted text.
Citing and Sharing
Basic information for referencing this web page. We also provide extended guidance on usage rights, references, copying or embedding.
Reference the current page of this Dissertation.
Lukic- Zrnic, Reiko. Magnetotransport Properties of AlxIn1-xAsySb1-y/GaSb and Optical Properties of GaAs1-xSbx, dissertation, May 2003; Denton, Texas. (https://digital.library.unt.edu/ark:/67531/metadc5522/m1/77/: accessed April 19, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; .