Characterization of boron nitride thin films on silicon (100) wafer.

Description:

Cubic boron nitride (cBN) thin films offer attractive mechanical and electrical properties. The synthesis of cBN films have been deposited using both physical and chemical vapor deposition methods, which generate internal residual, stresses that result in delamination of the film from substrates. Boron nitride films were deposited using electron beam evaporation without bias voltage and nitrogen bombardment (to reduce stresses) were characterize using FTIR, XRD, SEM, EDS, TEM, and AFM techniques. In addition, a pin-on-disk tribological test was used to measure coefficient of friction. Results indicated that samples deposited at 400°C contained higher cubic phase of BN compared to those films deposited at room temperature. A BN film containing cubic phase deposited at 400°C for 2 hours showed 0.1 friction coefficient.

Creator(s): Maranon, Walter
Creation Date: August 2007
Partner(s):
UNT Libraries
Collection(s):
UNT Theses and Dissertations
Usage:
Total Uses: 670
Past 30 days: 31
Yesterday: 0
Creator (Author):
Publisher Info:
Publisher Name: University of North Texas
Place of Publication: Denton, Texas
Date(s):
  • Creation: August 2007
  • Digitized: September 13, 2007
Description:

Cubic boron nitride (cBN) thin films offer attractive mechanical and electrical properties. The synthesis of cBN films have been deposited using both physical and chemical vapor deposition methods, which generate internal residual, stresses that result in delamination of the film from substrates. Boron nitride films were deposited using electron beam evaporation without bias voltage and nitrogen bombardment (to reduce stresses) were characterize using FTIR, XRD, SEM, EDS, TEM, and AFM techniques. In addition, a pin-on-disk tribological test was used to measure coefficient of friction. Results indicated that samples deposited at 400°C contained higher cubic phase of BN compared to those films deposited at room temperature. A BN film containing cubic phase deposited at 400°C for 2 hours showed 0.1 friction coefficient.

Degree:
Level: Master's
Language(s):
Subject(s):
Keyword(s): Cubic boron nitride | thin films | TEM
Contributor(s):
Partner:
UNT Libraries
Collection:
UNT Theses and Dissertations
Identifier:
  • OCLC: 191488109 |
  • ARK: ark:/67531/metadc3942
Resource Type: Thesis or Dissertation
Format: Text
Rights:
Access: Public
License: Copyright
Holder: Maranon, Walter
Statement: Copyright is held by the author, unless otherwise noted. All rights reserved.