Fabrication of MOS capacitor and transitor structure using contact photolithography.

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Description:

This problem in lieu of thesis report describes a practical photolithographic method to produce micro patterns on metal-oxide-semiconductor or metal-oxide-semiconductor-metal layers for electrical measurements. The desired patterns are then transferred from the photo mask to the photoresist-coated metal film by exposure, followed by wet etching. In the procedure described in this report, it was observed that microstructures as small as 27 mm with an edge roughness of ~ 2 mm can be reproducibly generated with this process. MOS capacitors and transistors structures can be fabricated by using this technique. The method described in this report requires access to only simple facilities so that it is relatively inexpensive, and the overall time required for the whole process is short.

Creator(s): Su, Danni
Creation Date: August 2002
Partner(s):
UNT Libraries
Collection(s):
UNT Theses and Dissertations
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Total Uses: 726
Past 30 days: 3
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Publisher Info:
Publisher Name: University of North Texas
Place of Publication: Denton, Texas
Date(s):
  • Creation: August 2002
  • Digitized: July 18, 2007
Description:

This problem in lieu of thesis report describes a practical photolithographic method to produce micro patterns on metal-oxide-semiconductor or metal-oxide-semiconductor-metal layers for electrical measurements. The desired patterns are then transferred from the photo mask to the photoresist-coated metal film by exposure, followed by wet etching. In the procedure described in this report, it was observed that microstructures as small as 27 mm with an edge roughness of ~ 2 mm can be reproducibly generated with this process. MOS capacitors and transistors structures can be fabricated by using this technique. The method described in this report requires access to only simple facilities so that it is relatively inexpensive, and the overall time required for the whole process is short.

Degree:
Level: Master's
Discipline: Materials Science
Note:

Problem in Lieu of Thesis

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Subject(s):
Contributor(s):
Partner:
UNT Libraries
Collection:
UNT Theses and Dissertations
Identifier:
  • ARK: ark:/67531/metadc3172
Resource Type: Thesis or Dissertation
Format: Text
Rights:
Access: Use restricted to UNT Community
License: Copyright
Holder: Su, Danni
Statement: Copyright is held by the author, unless otherwise noted. All rights reserved.