Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic Device Applications

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Patent relating to methods of forming graphene/(multilayer) boron nitride for electronic device applications.

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7 p. : ill.

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Kelber, Jeffry A. April 17, 2012.

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Patent relating to methods of forming graphene/(multilayer) boron nitride for electronic device applications.

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7 p. : ill.

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Abstract: Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by repeated atomic layer deposition (ALD) of a boron-halide or organoborane precursor and NH3 onto a substrate followed by a high temperature anneal. Graphene can then be formed on an ordered BN(111) film by depositing carbon on the ordered surface of the BN(111) film.

Prior Publication Data: US 2011/0045282 A1, February 24, 2011.

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  • August 18, 2009

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  • April 17, 2012

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  • April 17, 2012

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  • July 7, 2014, 8:20 a.m.

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  • Oct. 24, 2023, 1:18 p.m.

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Kelber, Jeffry A. Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic Device Applications, patent, April 17, 2012; [Washington, D.C.]. (https://digital.library.unt.edu/ark:/67531/metadc306045/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT College of Arts and Sciences.

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