Carrier Mobility, Charge Trapping Effects on the Efficiency of Heavily Doped Organic Light-Emitting Diodes, and EU(lll) Based Red OLEDs

Description:

Transient electroluminescence (EL) was used to measure the onset of emission delay in OLEDs based on transition metal, phosphorescent bis[3,5-bis(2-pyridyl)-1,2,4-triazolato] platinum(ΙΙ) and rare earth, phosphorescent Eu(hfa)3 with 4'-(p-tolyl)-2,2":6',2" terpyridine (ttrpy) doped into 4,4'-bis(carbazol-9-yl) triphenylamine (CBP), from which the carrier mobility was determined. For the Pt(ptp)2 doped CBP films in OLEDs with the structure: ITO/NPB (40nm)/mcp (10nm)/65% Pt(ptp)2:CBP (25nm)/TPBI (30nm)/Mg:Ag (100nm), where NPB=N, N'-bis(1-naphthyl)-N-N'-biphenyl-1, 1'-biphenyl-4, MCP= N, N'-dicarbazolyl-3,5-benzene, TPBI=1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, delayed recombination was observed and based on its dependence on frequency and duty cycle, ascribed to trapping and de-trapping processes at the interface of the emissive layer and electron blocker. The result suggests that the exciton recombination zone is at, or close to the interface between the emissive layer and electron blocker. The lifetime of the thin films of phosphorescent emitter Pt(ptp)2 were studied for comparison with rare earth emitter Eu(hfa)3. The lifetime of 65% Pt(ptp)2:CBP co-film was around 638 nanoseconds at the emission peak of 572nm, and the lifetime of neat Eu(hfa)3 film was obtained around 1 millisecond at 616 nm, which supports the enhanced efficiency obtained from the Pt(ptp)2 devices. The long lifetime and narrow emission of the rare earth dopant Eu(hfa)3 is a fundamental factor limiting device performance. Red organic light emitting diodes (OLEDs) based on the rare earth emitter Eu(hfa)3 with 4'-(p-tolyl)-2,2":6',2" terpyridine (ttrpy) complex have been studied and improved with respect performance. The 4.5% Eu(hfa)3 doped into CBP device produced the best power efficiency of 0.53 lm/W, and current efficiency of 1.09 cd/A. The data suggests that the long lifetime of the f-f transition of the Eu ion is a principal limiting factor irrespective of how efficient the energy transfer from the host to the dopant and the antenna effect are.

Creator(s): Lin, Ming-Te
Creation Date: August 2010
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UNT Libraries
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UNT Theses and Dissertations
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Publisher Info:
Publisher Name: University of North Texas
Place of Publication: Denton, Texas
Date(s):
  • Creation: August 2010
Description:

Transient electroluminescence (EL) was used to measure the onset of emission delay in OLEDs based on transition metal, phosphorescent bis[3,5-bis(2-pyridyl)-1,2,4-triazolato] platinum(ΙΙ) and rare earth, phosphorescent Eu(hfa)3 with 4'-(p-tolyl)-2,2":6',2" terpyridine (ttrpy) doped into 4,4'-bis(carbazol-9-yl) triphenylamine (CBP), from which the carrier mobility was determined. For the Pt(ptp)2 doped CBP films in OLEDs with the structure: ITO/NPB (40nm)/mcp (10nm)/65% Pt(ptp)2:CBP (25nm)/TPBI (30nm)/Mg:Ag (100nm), where NPB=N, N'-bis(1-naphthyl)-N-N'-biphenyl-1, 1'-biphenyl-4, MCP= N, N'-dicarbazolyl-3,5-benzene, TPBI=1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, delayed recombination was observed and based on its dependence on frequency and duty cycle, ascribed to trapping and de-trapping processes at the interface of the emissive layer and electron blocker. The result suggests that the exciton recombination zone is at, or close to the interface between the emissive layer and electron blocker. The lifetime of the thin films of phosphorescent emitter Pt(ptp)2 were studied for comparison with rare earth emitter Eu(hfa)3. The lifetime of 65% Pt(ptp)2:CBP co-film was around 638 nanoseconds at the emission peak of 572nm, and the lifetime of neat Eu(hfa)3 film was obtained around 1 millisecond at 616 nm, which supports the enhanced efficiency obtained from the Pt(ptp)2 devices. The long lifetime and narrow emission of the rare earth dopant Eu(hfa)3 is a fundamental factor limiting device performance. Red organic light emitting diodes (OLEDs) based on the rare earth emitter Eu(hfa)3 with 4'-(p-tolyl)-2,2":6',2" terpyridine (ttrpy) complex have been studied and improved with respect performance. The 4.5% Eu(hfa)3 doped into CBP device produced the best power efficiency of 0.53 lm/W, and current efficiency of 1.09 cd/A. The data suggests that the long lifetime of the f-f transition of the Eu ion is a principal limiting factor irrespective of how efficient the energy transfer from the host to the dopant and the antenna effect are.

Degree:
Level: Doctoral
Physical Description:

xiii, 121 p. : ill.

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Subject(s):
Keyword(s): OLEDs | semiconductor
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Partner:
UNT Libraries
Collection:
UNT Theses and Dissertations
Identifier:
  • OCLC: 698367129 |
  • UNTCAT: b3912095 |
  • ARK: ark:/67531/metadc30483
Resource Type: Thesis or Dissertation
Format: Text
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Access: Public
License: Copyright
Holder: Lin, Ming-Te
Statement: Copyright is held by the author, unless otherwise noted. All rights reserved.