Study of Novel Ion/surface Interactions Using Soft-landing Ion Mobility Page: 58
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and 170 V applied to the front drift ring, resulting a field of 22.41 V/cm. Pulsed laser
vaporization of the metal target was carried out at 50% laser energy
30 Kinetic Energy (eV)
~I -:4
2 5 1 1.4
064-1
1--e -0.4 -0.4
0.34 -0.44
a- 20 xI-0.4 34
I-. 14 - 4.24
"= I : +.1.1
i10
0 2 4 6 8 10
Pressure (i'on)
Figure 16. Kinetic energy plot of Au' incident to SAM modified silicon. Green points
indicate operational points for pressure dependency.
(~6 mJ) with a repetition rate of 2 Hz. The frequency of the laser fire was kept
intentionally low so as to avoid overlap by temporally adjacent ion packets, in effect
using the laser as the ion gating mechanism.
To ensure that metal clusters could be effectively landed on the modified silicon
surface, silver was used as a proof of concept. To understand the conformational
deviation of clusters incident to the modified silicon surface, an ion mobility spectrum
was collected and fit with Gaussian peaks, shown in Figure 17. Once completed, Ag
clusters were landed on the modified silicon surfaces for 5 minutes at 2 Torr He
pressure. AFM Images of the silver density on the MPTES modified silicon are shown
in Figure 18. SEM micrographs were also taken of the Ag deposition to compare to Ag
deposited on stainless steel, shown in Figure 19. It was shown that, even at the
shortest deposition times, significant silver density was seen on the modified silicon,
meaning that SLIM would be a viable technique for developing SERS substrates.58
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Hoffmann, William Darryle. Study of Novel Ion/surface Interactions Using Soft-landing Ion Mobility, dissertation, December 2012; Denton, Texas. (https://digital.library.unt.edu/ark:/67531/metadc177214/m1/68/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; .