High Sensitivity Measurement of Implanted as in the Presence of Ge in Ge(x)Si(1-x)/Si Layered Alloys Using Trace Element Accelerator Mass Spectrometry
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This article discusses high sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry.
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This article discusses high sensitivity measurement of implanted As in the presence of Ge in Ge(x)Si(1-x)/Si layered alloys using trace element accelerator mass spectrometry.
Abstract: Various devices can be realized on strained GeSi/Si substrates by doping the substrate with different impurities such as As. As is an n-type dopant in both Ge and Si. As cross contamination can also arise during germanium preamorphization implantation due to inadequate mass resolution in the implanter. Thus, it is important to be able to accurately measure low-level As concentrations in the presence of Ge. Secondary ion mass spectrometry (SIMS) is the standard technique for these types of measurements but is constrained by mass interferences from molecular ions (⁷⁴GeH, ²⁹Si³⁰Si¹⁶O). The trace element accelerator mass accelerator technique allows the breakup of interfering molecules. As is measured in a GeSi matrix with sensitivity significantly better than SIMS.
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Datar, Sameer A.; Wu, Liying; Guo, Baonian N.; Nigam, Mohit; Necsoiu, Daniela; Zhai, Y. J. et al.High Sensitivity Measurement of Implanted as in the Presence of Ge in Ge(x)Si(1-x)/Si Layered Alloys Using Trace Element Accelerator Mass Spectrometry,
article,
December 11, 2000;
[College Park, Maryland].
(https://digital.library.unt.edu/ark:/67531/metadc146576/:
accessed March 29, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT College of Arts and Sciences.