Experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉

Description:

This article discusses experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉.

Creator(s):
Creation Date: April 1998
Partner(s):
UNT College of Arts and Sciences
Collection(s):
UNT Scholarly Works
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Creator (Author):
Zhao, Z. Y.

University of North Texas

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Arrale, A. M.

University of North Texas

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Li, S. L.

University of North Texas

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Marble, D. K.

University of North Texas

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Weathers, Duncan L.

University of North Texas

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Matteson, Samuel E.

University of North Texas

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Anthony, J. M.

Texas Instruments. Central Research Laboratories

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Gnade, Bruce

Texas Instruments Central Research Laboratories

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Publisher Info:
Publisher Name: American Physical Society
Place of Publication: [College Park, Maryland]
Date(s):
  • Creation: April 1998
Description:

This article discusses experimental evidence for a discrete transition to channeling for 1.0-MeV protons in Si〈100〉.

Degree:
Department: Physics
Note:

Copyright 1998 American Physical Society. The following article appeared in Physical Review A, 57:4, http://link.aps.org/doi/10.1103/PhysRevA.57.2742

Note:

Abstract: The present work reports the experimental evidence of anomalies exhibited by the energy loss and energy straggling of channeled protons in silicon in transmission measurements versus the incident angle. Results are presented for 1.0-MeV protons channeled along the 〈100〉 axis for a silicon foil of 3.8 μm thickness. It is shown that the transition from random to a channeling condition is discrete. The energy spectra of transmitted ions show a random peak (lower energy) and a channeled peak (higher energy). The random peak has a fixed energy, while the energy of the channeled peak increases as the target crystal's axis approaches alignment with the direction of the incident ion beam. The results support a model suggesting that the channeled ions lose energy only to valence electrons and are concentrated in a narrow cone about the direction of incidence when they emerge from the crystal. The energy straggling of channeled particles reaches a minimum in the hyper-channeled condition. Both the energy loss and the energy straggling of channeled protons show a dependence on the local electron density.

Physical Description:

4 p.

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Subject(s):
Keyword(s): channeled protons | 1.0-MeV protons | silicon | energy straggling
Source: Physical Review A, 1998, College Park: American Physical Society, pp. 2742-2745
Partner:
UNT College of Arts and Sciences
Collection:
UNT Scholarly Works
Identifier:
  • DOI: 10.1103/PhysRevA.57.2742
  • ARK: ark:/67531/metadc139489
Resource Type: Article
Format: Text
Rights:
Access: Public
Citation:
Publication Title: Physical Review A
Volume: 57
Issue: 4
Page Start: 2742
Page End: 2745
Peer Reviewed: Yes