Thermal annealing behavior of an oxide layer under silicon

Description:

This article discusses the thermal annealing behavior of an oxide layer under silicon.

Creator(s):
Creation Date: December 15, 1982
Partner(s):
UNT College of Arts and Sciences
Collection(s):
UNT Scholarly Works
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Total Uses: 38
Past 30 days: 2
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Creator (Author):
Hamdi, A. H.

University of North Texas

Creator (Author):
Creator (Author):
Pinizzotto, Russell F.

Texas Instruments Central Research Laboratories

Creator (Author):
Matteson, Samuel E.

Texas Instruments Central Research Laboratories

Creator (Author):
Lam, H. W.

Texas Instruments Central Research Laboratories

Creator (Author):
Malhi, S. D. S.

Texas Instruments Central Research Laboratories

Publisher Info:
Place of Publication: [College Park, Maryland]
Date(s):
  • Creation: December 15, 1982
Description:

This article discusses the thermal annealing behavior of an oxide layer under silicon.

Degree:
Department: Physics
Note:

Copyright 1982 American Institute of Physics. Appl. Phys. Lett. 41(12), 15 December 1982. http://dx.doi.org/10.1063/1.93413

Note:

Abstract: High resolution Rutherford backscattering spectrometry and ion channeling have been employed to evaluate the crystallinity of the surface silicon layer in oxygen implanted silicon. The quality of the top surface layer was determined by measuring the minimum yields along 〈110〉 directions in channeling spectra. Single crystal (100) silicon was implanted with 300 keV O2+ to a dose of 1.06 X 10(18) O2+/cm2. Measurements of residual damage of the top layer were made after annealing the samples at 1150 ˚C for times ranging from 10 to 240 min in either Ar or N2. Under the implantation conditions used in this experiment, a uniform oxide layer 0.52 μm thick was buried under a top silicon layer 0.17 μm thick. The buried oxide layer has abrupt silicon to oxide interfaces. The highest quality silicon surface layer was produced after 3-h annealing in an Ar ambient. A lesser quality silicon surface layer was produced by annealing for shorter times or for equivalent times in N2 ambient.

Physical Description:

3 p.

Language(s):
Subject(s):
Keyword(s): rutherford scattering | silicon oxides | annealing | integrated circuits | spectroscopy | temperature dependence | interfaces
Source: Applied Physics Letters, 1982, College Park: American Institute of Physics, pp. 1143-1145
Partner:
UNT College of Arts and Sciences
Collection:
UNT Scholarly Works
Identifier:
  • ARK: ark:/67531/metadc139474
Resource Type: Article
Format: Text
Rights:
Access: Public
Citation:
Publication Title: Applied Physics Letters
Volume: 41
Issue: 12
Page Start: 1143
Page End: 1145
Peer Reviewed: Yes