Rapid isothermal anneal of 75As implanted silicon

Description:

Article discussing a study of the rapid isothermal anneal of 75As implanted silicon.

Creator(s):
Creation Date: November 15, 1982
Partner(s):
UNT College of Arts and Sciences
Collection(s):
UNT Scholarly Works
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Total Uses: 24
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Creator (Author):
Wilson, Scott R.

Semiconductor Research and Development Laboratories, Motorola

Creator (Author):
Gregory, R. B.

Semiconductor Research and Development Laboratories, Motorola

Creator (Author):
Paulson, W. M.

Semiconductor Research and Development Laboratories, Motorola

Creator (Author):
Hamdi, A. H.

University of North Texas

Creator (Author):
Publisher Info:
Place of Publication: [College Park, Maryland]
Date(s):
  • Creation: November 15, 1982
Description:

Article discussing a study of the rapid isothermal anneal of 75As implanted silicon.

Degree:
Department: Physics
Note:

Copyright 1982 American Institute of Physics. Applied Physics Letters, 41(10), http://dx.doi.org/10.1063/1.93362

Note:

Abstract: Silicon wafers implanted with 75As have been annealed with a Varian IA-200 isothermal annealer. The anneal occurs in vacuum using radiation from a resistively heated sheet of graphite. The anneal quality depends on the graphite heater temperature and exposure time. If the anneal time is too short implantation damage remains and if the time is too long measurable losses of As occur causing the sheet resistance to increase. The loss of As can be prevented by depositing 0.05 μm of SiO2 on the wafer before annealing.

Physical Description:

3 p.

Language(s):
Subject(s):
Keyword(s): silicon | annealing | arsenic ions | ion implantation | isothermal processes | joule heating | graphite | temperature dependence | time dependence | damage | deposition | silicon oxides | surface coating | electric conductivity
Source: Applied Physics Letters, 1982, College Park: American Institute of Physics, pp. 978-980
Partner:
UNT College of Arts and Sciences
Collection:
UNT Scholarly Works
Identifier:
  • ARK: ark:/67531/metadc139471
Resource Type: Article
Format: Text
Rights:
Access: Public
Citation:
Publication Title: Applied Physics Letters
Volume: 41
Issue: 10
Page Start: 978
Page End: 980
Peer Reviewed: Yes