Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions Mao, R. Kong, B.D. Kim, K.W. Jayasekera, T. Calzolari, Arrigo Buongiorno Nardelli, Marco American Institute of Physics 2012-09-13 English This article discusses phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions. Using calculations from first principles and the Landauer approach for phonon transport, the authors study the Kapitza resistance in selected multilayer graphene/dielectric heterojunctions (hexagonal BN and wurtzite SiC) and demonstrate (i) the resistance variability (~50 - 700 x 10(-10) m2K/W) induced by vertical coupling, dimensionality, and atomistic structure of the system and (ii) the ability of understanding the intensity of the thermal transmittance in terms of the phonon distribution at the interface. The authors results pave the way to the fundamental understanding of active phonon engineering by microscopic geometry design. ab initio calculations boron compounds graphene interface structure Kapitza resistance multilayers nanostructured materials semiconductor-insulator boundaries silicon compounds thermal conductivity wide band gap semiconductors Applied Physics Letters, 2012, College Park: American Institute of Physics Public Article 4 p. Text doi: 10.1063/1.4752437 http://digital.library.unt.edu/ark:/67531/metadc132984/ ark: ark:/67531/metadc132984