Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions

Description:

Article discussing phonon engineering in nanostructures and controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions.

Creator(s):
Creation Date: September 13, 2012
Partner(s):
UNT College of Arts and Sciences
Collection(s):
UNT Scholarly Works
Usage:
Total Uses: 149
Past 30 days: 6
Yesterday: 0
Creator (Author):
Mao, R.

North Carolina State University

Creator (Author):
Kong, Byoung Don

North Carolina State University

Creator (Author):
Kim, Ki Wook

North Carolina State University

Creator (Author):
Jayasekera, Thushari

Southern Illinois University-Carbondale

Creator (Author):
Calzolari, Arrigo

Istituto Nanoscienze

Creator (Author):
Buongiorno Nardelli, Marco

University of North Texas; Oak Ridge National Laboratory

Publisher Info:
Place of Publication: [College Park, Maryland]
Date(s):
  • Creation: September 13, 2012
Description:

Article discussing phonon engineering in nanostructures and controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions.

Degree:
Department: Physics
Department: Chemistry
Note:

Copyright 2012 American Institute of Physics. The following article appeared in Applied Physics Letters, 101, 113111, http://dx.doi.org/10.1063/1.4752437

Note:

Abstract: Using calculations from first principles and the Landauer approach for phonon transport, we study the Kapitza resistance in selected multilayer graphene/dielectric heterojunctions (hexagonal BN and wurtzite SiC) and demonstrate (i) the resistance variability (~50 - 700 x 10(-10) m2K/W) induced by vertical coupling, dimensionality, and atomistic structure of the system and (ii) the ability of understanding the intensity of the thermal transmittance in terms of the phonon distribution at the interface. Our results pave the way to the fundamental understanding of active phonon engineering by microscopic geometry design.

Physical Description:

4 p.

Language(s):
Subject(s):
Keyword(s): ab initio calculations | boron compounds | graphene | interface structure | Kapitza resistance | multilayers | nanostructured materials | semiconductor-insulator boundaries | silicon compounds | thermal conductivity | wide band gap semiconductors
Source: Applied Physics Letters, 2012, College Park: American Institute of Physics
Partner:
UNT College of Arts and Sciences
Collection:
UNT Scholarly Works
Identifier:
  • DOI: 10.1063/1.4752437 |
  • ARK: ark:/67531/metadc132984
Resource Type: Article
Format: Text
Rights:
Access: Public
Citation:
Publication Title: Applied Physics Letters
Volume: 101
Issue: 11
Peer Reviewed: Yes