Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures Page: VIII
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4.5 The Huang-Rhys parameter S as a function of the biaxial strain Exx in the system
............................................................................................................ 5 2
4.6 Top-down images of the ELOG sample showing the 'wing' and 'seed' regions of
the sam ple ....................... .....................................................................53
4.7 a, Near-field topology of the sample showing the 'wing' and 'seed' regions. b,
Near-field integrated photoluminescence intensity. c, The empirically derived
Huang-Rhys parameter. d, The strain as derived using the inverse of the function
S(Exx) presented in Fig. 4.5 ..................................... 56
4.8 Emission energy of common semiconductors versus their lattice constants ...... 57
5.1 a, CW PL measurement of InGaN/GaN multi-QW system with embedded Au NPs
(Red), Ag NPs (blue) and without NPs (black) at 77K (solid) and 300K (dashed).
b, CW PL measurement for a similar structure with metal thin-films................... 60
5.2 Time-resolved PL measurement showing the decay lifetime of the reference
(black), Au NP (red) and Ag NP (blue) samples .................... ...... ................ 61
5.3 a, The carrier concentration as a function of distance from the Au NP in the
steady-state model at temperatures from 11 K to 300K ...................................... 66
5.4 a, The carrier concentration as a function of time for the Au NP system. b, The
same for the reference system ....................................................... 68
5.5 PL Intensity calculated using Eq. 5.4.5 for the Au NP (red) and reference (black)
systems as a function of time after excitation by an instantaneous Gaussian
pulse ......... ..... .... ..... .............. ............................69
5.7 Debye radius (nm) as a function of time and excitation power density for the
reference system .................................... ........................ ......... 70
5.6 PL Intensity as a function of incident power density for the Au (red circles) and
reference (black squares) systems ........ ................................. ............ 70
5.8 a, Schematic diagram of the electron-hole pair and its image used for computing
the net acceleration of the e-h pair. b, Net acceleration on an e-h pair with
orientation E and distance d from the surface of the nanoparticle ................... 72
5.9 a, The peak PL intensity as a function of the measurement angle E for the
reference (black), Au NP (red) and Ag NP (blue) samples. b, The integrated PL
intensity as a function of the measurement angle............................................ 74
5.10 a, The Huang-Rhys parameter S as a function of angle for the reference (black),
Au NP (red) and Ag NP (blue) samples. b, The intensity of the main emission and
first (dashed) and second (dotted) phonon replicas normalized with respect to the
total emission (i.e. IPR-O + IPR-1 + IPR-2 = 1) .................. ...................... 75VIII
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Llopis, Antonio. Electrostatic Mechanism of Emission Enhancement in Hybrid Metal-semiconductor Light-emitting Heterostructures, dissertation, May 2012; Denton, Texas. (https://digital.library.unt.edu/ark:/67531/metadc115113/m1/9/: accessed April 23, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; .